Impact of technology scaling in SOI back-channel total dose tolerance. A 2-D numerical study using self-consistent oxide code

A new 2D-self-consistent code has been developed and is applied to the understanding of charge trapping in SOI buried oxides and its effect on back-channel MOS leakage in SOI transistors. 2D effects, field-collapse and field-enhancement are observed. Clear indications on scaling trends are obtained...

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