Impact of forward and reverse deep n-well biasing on the 1/f noise of 0.13μm n-channel MOSFETs in triple well technology

To date, flicker noise (1/f) compact models for describing low frequency noise performance of the n-channel transistor in DNW architecture under varying secondary body bias is lacking, since the current BSIM noise model only caters for the standard MOSFET which do not have the DNW. In this work, the...

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Veröffentlicht in:	Solid-state electronics 2009-06, Vol.53 (6), p.599-606
Hauptverfasser:	Png, Lih Chieh, Chew, Kok Wai, Yeo, Kiat Seng
Format:	Artikel
Sprache:	eng
Schlagworte:	1/f Noise Applied sciences Bias Channels Composite low frequency noise model Compound structure devices Deep n-well Electronics Exact sciences and technology Flicker Forward/reverse body effects Inversions Low frequencies Mathematical models MOSFETs Noise Secondary body biasing Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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