Stress analysis of Si sub(1-) sub(x)Ge sub(x embedded source/drain junctions)
The purpose of this paper is to evaluate the impact of the geometry of embedded Si sub(1-) sub(x)Ge sub(x source/drain junctions on the stress field. Stress simulations were performed using TSUPREM4 2D software to further investigate the elastic strain relaxation as a function of Si) sub(1)- sub(xGe...
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| Veröffentlicht in: | Materials science in semiconductor processing 2008-10, Vol.11 (5-6), p.285-290 |
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| container_title | Materials science in semiconductor processing |
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| creator | Gonzalez, MBargallo Simoen, E Naka, N Okuno, Y Eneman, G Hikavyy, A Verheyen, P Loo, R Claeys, C Machkaoutsan, V Tomasini, P Thomas, S G Lu, J P Wise, R |
| description | The purpose of this paper is to evaluate the impact of the geometry of embedded Si sub(1-) sub(x)Ge sub(x source/drain junctions on the stress field. Stress simulations were performed using TSUPREM4 2D software to further investigate the elastic strain relaxation as a function of Si) sub(1)- sub(xGe) sub(x) alloy active size, in the regime where no plastic relaxation is present. Moreover, the role of the epilayer thickness and the Ge content on the stress levels is also discussed. The work is complemented with experimental Raman spectroscopy. |
| doi_str_mv | 10.1016/j.mssp.2008.09.013 |
| format | Article |
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| identifier | ISSN: 1369-8001 |
| ispartof | Materials science in semiconductor processing, 2008-10, Vol.11 (5-6), p.285-290 |
| issn | 1369-8001 |
| language | eng |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Computer programs Drains Germanium Semiconductors Simulation Strain relaxation Stress relaxation Stresses |
| title | Stress analysis of Si sub(1-) sub(x)Ge sub(x embedded source/drain junctions) |
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