Silicon controlled rectifier (SCR) compact modeling based on VBIC and Gummel–Poon models
Silicon controlled rectifier (SCR) is frequently used for electrostatic discharge (ESD) protection applications. For computer-aided design purposes, a macromodel can be constructed for such a device, but a model for the NPN and PNP bipolar transistors imbedded in the SCR is required in the macromode...
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| Veröffentlicht in: | Solid-state electronics 2009-02, Vol.53 (2), p.195-203 |
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| container_title | Solid-state electronics |
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| creator | Lou, Lifang Liou, Juin J. Dong, Shurong Han, Yan |
| description | Silicon controlled rectifier (SCR) is frequently used for electrostatic discharge (ESD) protection applications. For computer-aided design purposes, a macromodel can be constructed for such a device, but a model for the NPN and PNP bipolar transistors imbedded in the SCR is required in the macromodel development. In the paper, we use both the Vertical Bipolar Inter-Company (VBIC) and SPICE Gummel–Poon (SGP) models for these bipolar transistors and compare the perspective macromodel results. Measurements obtained from the transmission line pulsing (TLP) tester are also included to assess the suitability and pros and cons of the VBIC and SGP models for the SCR ESD modeling. |
| doi_str_mv | 10.1016/j.sse.2008.11.007 |
| format | Article |
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For computer-aided design purposes, a macromodel can be constructed for such a device, but a model for the NPN and PNP bipolar transistors imbedded in the SCR is required in the macromodel development. In the paper, we use both the Vertical Bipolar Inter-Company (VBIC) and SPICE Gummel–Poon (SGP) models for these bipolar transistors and compare the perspective macromodel results. Measurements obtained from the transmission line pulsing (TLP) tester are also included to assess the suitability and pros and cons of the VBIC and SGP models for the SCR ESD modeling.</description><identifier>ISSN: 0038-1101</identifier><identifier>EISSN: 1879-2405</identifier><identifier>DOI: 10.1016/j.sse.2008.11.007</identifier><language>eng</language><publisher>Kidlington: Elsevier Ltd</publisher><subject>Applied sciences ; Bipolar transistors ; Compact modeling ; Computer aided design ; Devices ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Electrostatic discharge (ESD) ; Electrostatic discharges ; Exact sciences and technology ; Mathematical models ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon controlled rectifier (SCR) ; Silicon controlled rectifiers ; SPICE Gummel–Poon (SGP) model ; Testing, measurement, noise and reliability ; Transistors ; Vertical Bipolar Inter-Company (VBIC) model</subject><ispartof>Solid-state electronics, 2009-02, Vol.53 (2), p.195-203</ispartof><rights>2008 Elsevier Ltd</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c311t-1f155ec5d3717c85e4283ce49705a6f0b330204815b0b7f7817ccc66ff4bdaff3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0038110108003754$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65534</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21128029$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Lou, Lifang</creatorcontrib><creatorcontrib>Liou, Juin J.</creatorcontrib><creatorcontrib>Dong, Shurong</creatorcontrib><creatorcontrib>Han, Yan</creatorcontrib><title>Silicon controlled rectifier (SCR) compact modeling based on VBIC and Gummel–Poon models</title><title>Solid-state electronics</title><description>Silicon controlled rectifier (SCR) is frequently used for electrostatic discharge (ESD) protection applications. For computer-aided design purposes, a macromodel can be constructed for such a device, but a model for the NPN and PNP bipolar transistors imbedded in the SCR is required in the macromodel development. In the paper, we use both the Vertical Bipolar Inter-Company (VBIC) and SPICE Gummel–Poon (SGP) models for these bipolar transistors and compare the perspective macromodel results. Measurements obtained from the transmission line pulsing (TLP) tester are also included to assess the suitability and pros and cons of the VBIC and SGP models for the SCR ESD modeling.</description><subject>Applied sciences</subject><subject>Bipolar transistors</subject><subject>Compact modeling</subject><subject>Computer aided design</subject><subject>Devices</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Electrostatic discharge (ESD)</subject><subject>Electrostatic discharges</subject><subject>Exact sciences and technology</subject><subject>Mathematical models</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon controlled rectifier (SCR)</subject><subject>Silicon controlled rectifiers</subject><subject>SPICE Gummel–Poon (SGP) model</subject><subject>Testing, measurement, noise and reliability</subject><subject>Transistors</subject><subject>Vertical Bipolar Inter-Company (VBIC) model</subject><issn>0038-1101</issn><issn>1879-2405</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp9kMtKxDAUhoMoOI4-gLtuRF20npNeB1c6eANB8bZwE9L0RDKk7Zh0BHe-g2_ok5hxxKWLEEi-_z-cj7FdhAQBi6NZ4j0lHKBKEBOAco2NsConMc8gX2cjgLSKMaCbbMv7GQDwAmHEnu-NNarvonAG11tLTeRIDUYbctHB_fTuMHy1c6mGqO0bsqZ7iWrpAxZCT6dX00h2TXSxaFuyXx-ft314_gH9NtvQ0nra-b3H7PH87GF6GV_fXFxNT65jlSIOMWrMc1J5k5ZYqiqnjFepomxSQi4LDXWaAoeswryGutRlFSilikLrrG6k1umY7a96565_XZAfRGu8ImtlR_3CiwlmRQrIy0DiilSu996RFnNnWuneBYJYahQzETSKpUaBKILGkNn7bZdeSaud7JTxf0GOyCvgk8Adr7iwOb0FecIrQ52ixix9iqY3_0z5BlGTh7A</recordid><startdate>20090201</startdate><enddate>20090201</enddate><creator>Lou, Lifang</creator><creator>Liou, Juin J.</creator><creator>Dong, Shurong</creator><creator>Han, Yan</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20090201</creationdate><title>Silicon controlled rectifier (SCR) compact modeling based on VBIC and Gummel–Poon models</title><author>Lou, Lifang ; Liou, Juin J. ; Dong, Shurong ; Han, Yan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c311t-1f155ec5d3717c85e4283ce49705a6f0b330204815b0b7f7817ccc66ff4bdaff3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Applied sciences</topic><topic>Bipolar transistors</topic><topic>Compact modeling</topic><topic>Computer aided design</topic><topic>Devices</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Electrostatic discharge (ESD)</topic><topic>Electrostatic discharges</topic><topic>Exact sciences and technology</topic><topic>Mathematical models</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon controlled rectifier (SCR)</topic><topic>Silicon controlled rectifiers</topic><topic>SPICE Gummel–Poon (SGP) model</topic><topic>Testing, measurement, noise and reliability</topic><topic>Transistors</topic><topic>Vertical Bipolar Inter-Company (VBIC) model</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lou, Lifang</creatorcontrib><creatorcontrib>Liou, Juin J.</creatorcontrib><creatorcontrib>Dong, Shurong</creatorcontrib><creatorcontrib>Han, Yan</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solid-state electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lou, Lifang</au><au>Liou, Juin J.</au><au>Dong, Shurong</au><au>Han, Yan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Silicon controlled rectifier (SCR) compact modeling based on VBIC and Gummel–Poon models</atitle><jtitle>Solid-state electronics</jtitle><date>2009-02-01</date><risdate>2009</risdate><volume>53</volume><issue>2</issue><spage>195</spage><epage>203</epage><pages>195-203</pages><issn>0038-1101</issn><eissn>1879-2405</eissn><abstract>Silicon controlled rectifier (SCR) is frequently used for electrostatic discharge (ESD) protection applications. For computer-aided design purposes, a macromodel can be constructed for such a device, but a model for the NPN and PNP bipolar transistors imbedded in the SCR is required in the macromodel development. In the paper, we use both the Vertical Bipolar Inter-Company (VBIC) and SPICE Gummel–Poon (SGP) models for these bipolar transistors and compare the perspective macromodel results. Measurements obtained from the transmission line pulsing (TLP) tester are also included to assess the suitability and pros and cons of the VBIC and SGP models for the SCR ESD modeling.</abstract><cop>Kidlington</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.sse.2008.11.007</doi><tpages>9</tpages></addata></record> |
| fulltext | fulltext |
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| ispartof | Solid-state electronics, 2009-02, Vol.53 (2), p.195-203 |
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| language | eng |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Applied sciences Bipolar transistors Compact modeling Computer aided design Devices Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Electrostatic discharge (ESD) Electrostatic discharges Exact sciences and technology Mathematical models Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon controlled rectifier (SCR) Silicon controlled rectifiers SPICE Gummel–Poon (SGP) model Testing, measurement, noise and reliability Transistors Vertical Bipolar Inter-Company (VBIC) model |
| title | Silicon controlled rectifier (SCR) compact modeling based on VBIC and Gummel–Poon models |
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