Design of AlGaN/GaN HEMTs employing mesa field plate for breakdown voltage enhancement
We proposed the AlGaN/GaN high electron mobility transistors (HEMTs) employing the mesa field plate and carried out the detailed numerical simulation of device operation using ISE-TCAD. The reduction of peak electric field is required to achieve the high breakdown voltage of AlGaN/GaN HEMTs. Propose...
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| Veröffentlicht in: | Solid-state electronics 2010-04, Vol.54 (4), p.405-409 |
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| container_title | Solid-state electronics |
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| creator | Cho, Kyu-Heon Kim, Young-Shil Lim, Jiyong Choi, Young-Hwan Han, Min-Koo |
| description | We proposed the AlGaN/GaN high electron mobility transistors (HEMTs) employing the mesa field plate and carried out the detailed numerical simulation of device operation using ISE-TCAD. The reduction of peak electric field is required to achieve the high breakdown voltage of AlGaN/GaN HEMTs. Proposed AlGaN/GaN HEMT with both gate and mesa field plates simultaneously reduced the electric field concentration at the gate and the drain edge by decreasing the potential gradient along the 2-DEG channel. As the peak electric field at the drain edge was decreased, the breakdown voltage was increased by 66% compared with the AlGaN/GaN HEMT with the gate field plate only. The breakdown voltage could be increased without sacrificing any other forward characteristics due to the SiO2 passivation layer. |
| doi_str_mv | 10.1016/j.sse.2009.12.034 |
| format | Article |
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The reduction of peak electric field is required to achieve the high breakdown voltage of AlGaN/GaN HEMTs. Proposed AlGaN/GaN HEMT with both gate and mesa field plates simultaneously reduced the electric field concentration at the gate and the drain edge by decreasing the potential gradient along the 2-DEG channel. As the peak electric field at the drain edge was decreased, the breakdown voltage was increased by 66% compared with the AlGaN/GaN HEMT with the gate field plate only. The breakdown voltage could be increased without sacrificing any other forward characteristics due to the SiO2 passivation layer.</description><identifier>ISSN: 0038-1101</identifier><identifier>EISSN: 1879-2405</identifier><identifier>DOI: 10.1016/j.sse.2009.12.034</identifier><language>eng</language><publisher>Kidlington: Elsevier Ltd</publisher><subject>AlGaN/GaN high electron mobility transistors (HEMTs) ; Aluminum gallium nitrides ; Applied sciences ; Breakdown ; Breakdown voltage ; Electric fields ; Electric potential ; Electronics ; Exact sciences and technology ; Field plate ; Gallium nitrides ; High electron mobility transistors ; Passivation ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors ; Voltage</subject><ispartof>Solid-state electronics, 2010-04, Vol.54 (4), p.405-409</ispartof><rights>2009 Elsevier Ltd</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c359t-164d40b1d8c4ab2b59b023c248486f16f8dec61ec32dd4915a659c1b22420f383</citedby><cites>FETCH-LOGICAL-c359t-164d40b1d8c4ab2b59b023c248486f16f8dec61ec32dd4915a659c1b22420f383</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0038110109003773$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22524405$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Cho, Kyu-Heon</creatorcontrib><creatorcontrib>Kim, Young-Shil</creatorcontrib><creatorcontrib>Lim, Jiyong</creatorcontrib><creatorcontrib>Choi, Young-Hwan</creatorcontrib><creatorcontrib>Han, Min-Koo</creatorcontrib><title>Design of AlGaN/GaN HEMTs employing mesa field plate for breakdown voltage enhancement</title><title>Solid-state electronics</title><description>We proposed the AlGaN/GaN high electron mobility transistors (HEMTs) employing the mesa field plate and carried out the detailed numerical simulation of device operation using ISE-TCAD. The reduction of peak electric field is required to achieve the high breakdown voltage of AlGaN/GaN HEMTs. Proposed AlGaN/GaN HEMT with both gate and mesa field plates simultaneously reduced the electric field concentration at the gate and the drain edge by decreasing the potential gradient along the 2-DEG channel. As the peak electric field at the drain edge was decreased, the breakdown voltage was increased by 66% compared with the AlGaN/GaN HEMT with the gate field plate only. The breakdown voltage could be increased without sacrificing any other forward characteristics due to the SiO2 passivation layer.</description><subject>AlGaN/GaN high electron mobility transistors (HEMTs)</subject><subject>Aluminum gallium nitrides</subject><subject>Applied sciences</subject><subject>Breakdown</subject><subject>Breakdown voltage</subject><subject>Electric fields</subject><subject>Electric potential</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Field plate</subject><subject>Gallium nitrides</subject><subject>High electron mobility transistors</subject><subject>Passivation</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><subject>Voltage</subject><issn>0038-1101</issn><issn>1879-2405</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kLtOxDAQRS0EEsvCB9C5QVQJHscJiagQb4lHA7SWY48XL0682AHE32O0iJJiNM25dzSHkH1gJTBojpZlSlhyxroSeMkqsUFm0B53BRes3iQzxqq2gIxuk52Ulowx3gCbkedzTG4x0mDpqb9S90d56PXF3WOiOKx8-HLjgg6YFLUOvaErryakNkTaR1SvJnyO9CP4SS2Q4viiRo0DjtMu2bLKJ9z73XPydHnxeHZd3D5c3Zyd3ha6qrupgEYYwXowrRaq533d9YxXmotWtI2FxrYGdQOoK26M6KBWTd1p6DkXnNmqrebkcN27iuHtHdMkB5c0eq9GDO9JdiAa3olcOiewJnUMKUW0chXdoOKXBCZ_FMqlzArlj0IJXGaFOXPw266SVt7G_J5Lf0HOay6y3sydrDnMr344jDJph1mFcRH1JE1w_1z5BoCyhRY</recordid><startdate>20100401</startdate><enddate>20100401</enddate><creator>Cho, Kyu-Heon</creator><creator>Kim, Young-Shil</creator><creator>Lim, Jiyong</creator><creator>Choi, Young-Hwan</creator><creator>Han, Min-Koo</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QQ</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20100401</creationdate><title>Design of AlGaN/GaN HEMTs employing mesa field plate for breakdown voltage enhancement</title><author>Cho, Kyu-Heon ; Kim, Young-Shil ; Lim, Jiyong ; Choi, Young-Hwan ; Han, Min-Koo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c359t-164d40b1d8c4ab2b59b023c248486f16f8dec61ec32dd4915a659c1b22420f383</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>AlGaN/GaN high electron mobility transistors (HEMTs)</topic><topic>Aluminum gallium nitrides</topic><topic>Applied sciences</topic><topic>Breakdown</topic><topic>Breakdown voltage</topic><topic>Electric fields</topic><topic>Electric potential</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Field plate</topic><topic>Gallium nitrides</topic><topic>High electron mobility transistors</topic><topic>Passivation</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cho, Kyu-Heon</creatorcontrib><creatorcontrib>Kim, Young-Shil</creatorcontrib><creatorcontrib>Lim, Jiyong</creatorcontrib><creatorcontrib>Choi, Young-Hwan</creatorcontrib><creatorcontrib>Han, Min-Koo</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solid-state electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cho, Kyu-Heon</au><au>Kim, Young-Shil</au><au>Lim, Jiyong</au><au>Choi, Young-Hwan</au><au>Han, Min-Koo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Design of AlGaN/GaN HEMTs employing mesa field plate for breakdown voltage enhancement</atitle><jtitle>Solid-state electronics</jtitle><date>2010-04-01</date><risdate>2010</risdate><volume>54</volume><issue>4</issue><spage>405</spage><epage>409</epage><pages>405-409</pages><issn>0038-1101</issn><eissn>1879-2405</eissn><abstract>We proposed the AlGaN/GaN high electron mobility transistors (HEMTs) employing the mesa field plate and carried out the detailed numerical simulation of device operation using ISE-TCAD. The reduction of peak electric field is required to achieve the high breakdown voltage of AlGaN/GaN HEMTs. Proposed AlGaN/GaN HEMT with both gate and mesa field plates simultaneously reduced the electric field concentration at the gate and the drain edge by decreasing the potential gradient along the 2-DEG channel. As the peak electric field at the drain edge was decreased, the breakdown voltage was increased by 66% compared with the AlGaN/GaN HEMT with the gate field plate only. The breakdown voltage could be increased without sacrificing any other forward characteristics due to the SiO2 passivation layer.</abstract><cop>Kidlington</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.sse.2009.12.034</doi><tpages>5</tpages></addata></record> |
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| source | Elsevier ScienceDirect Journals |
| subjects | AlGaN/GaN high electron mobility transistors (HEMTs) Aluminum gallium nitrides Applied sciences Breakdown Breakdown voltage Electric fields Electric potential Electronics Exact sciences and technology Field plate Gallium nitrides High electron mobility transistors Passivation Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Voltage |
| title | Design of AlGaN/GaN HEMTs employing mesa field plate for breakdown voltage enhancement |
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