Small-signal modeling of MOSFET cascode with merged diffusion

For the first time, the small-signal model of MOSFET cascode with merged diffusion is presented. It is the cascade of the two quasi-static MOSFET small-signal equivalent circuits. Drain of one transistor and source of another transistor is shared with merged diffusion. By Y-parameter analysis, capac...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Solid-state electronics 2009-05, Vol.53 (5), p.520-525
Hauptverfasser:	Yun, Yeonam, Jhon, Hee-Sauk, Jeon, Jongwook, Lee, Jaehong, Shin, Hyungcheol
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Cascode Diffusion Drains Electronics Equivalent circuits Exact sciences and technology Mathematical analysis Mathematical models Merged diffusion MOSFETs RF MOSFET Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Small-signal model Transistors
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!