Fabrication of n-Type Mesoporous Silicon Nanowires by One-Step Etching
In general, n-type mesoporous silicon nanowires (mp-SiNWs) are exclusively created by the two-step metal-assisted chemical etching (MACE). This work first reports that one-step MACE (in HF and AgNO3) is also capable of producing the n-type mp-SiNWs, and the developed formula is generally adapted to...
Gespeichert in:
| Veröffentlicht in: | Nano letters 2011-12, Vol.11 (12), p.5252-5258 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 5258 |
|---|---|
| container_issue | 12 |
| container_start_page | 5252 |
| container_title | Nano letters |
| container_volume | 11 |
| creator | To, Wai-Keung Tsang, Chi-Him Li, Hau-Hau Huang, Zhifeng |
| description | In general, n-type mesoporous silicon nanowires (mp-SiNWs) are exclusively created by the two-step metal-assisted chemical etching (MACE). This work first reports that one-step MACE (in HF and AgNO3) is also capable of producing the n-type mp-SiNWs, and the developed formula is generally adapted to generate SiNWs by etching n-Si(100) with electrical resistivity over a range of 10–3–101 Ω·cm. Integrating the contribution of silicon intrinsic properties in the existing MACE mechanism explicitly accounts for the new findings and contradictions with previous studies. The as-generated mesoporous structures emit red light under laser excitation at room temperature. The red-color emission sensitively varies with temperature over a range of 16–300 K, attributed to a temperature-dependent photoluminescent mechanism. |
| doi_str_mv | 10.1021/nl202674t |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_911938400</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>911938400</sourcerecordid><originalsourceid>FETCH-LOGICAL-a443t-283da11dbd7e010052d4c9d7f020e6c2e4d5bb5cea3be56e7068b74d239b173d3</originalsourceid><addsrcrecordid>eNp90EtLw0AQB_BFFN8Hv4DkIuohOvtI0j1KsSqoPajnsI-JrqS7cTdF-u2NtNaLeJqB-TEz_Ak5onBBgdFL3zJgZSX6DbJLCw55KSXbXPcjsUP2UnoHAMkL2CY7jAFUEtgumUyUjs6o3gWfhSbz-fOiw-wBU-hCDPOUPbnWmWH4qHz4dBFTphfZ1GP-1GOXXffmzfnXA7LVqDbh4aruk5fJ9fP4Nr-f3tyNr-5zJQTvczbiVlFqta0QKEDBrDDSVg0wwNIwFLbQujCouMaixArKka6EZVxqWnHL98npcm8Xw8ccU1_PXDLYtsrj8GwtKZV8JAAGefavpFXJoKBSlgM9X1ITQ0oRm7qLbqbioqZQfwdcrwMe7PFq7VzP0K7lT6IDOFkBlYxqm6i8cenXFZwKJuSvUybV72Ee_ZDbHwe_ALTAjUo</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1762051996</pqid></control><display><type>article</type><title>Fabrication of n-Type Mesoporous Silicon Nanowires by One-Step Etching</title><source>ACS Publications</source><creator>To, Wai-Keung ; Tsang, Chi-Him ; Li, Hau-Hau ; Huang, Zhifeng</creator><creatorcontrib>To, Wai-Keung ; Tsang, Chi-Him ; Li, Hau-Hau ; Huang, Zhifeng</creatorcontrib><description>In general, n-type mesoporous silicon nanowires (mp-SiNWs) are exclusively created by the two-step metal-assisted chemical etching (MACE). This work first reports that one-step MACE (in HF and AgNO3) is also capable of producing the n-type mp-SiNWs, and the developed formula is generally adapted to generate SiNWs by etching n-Si(100) with electrical resistivity over a range of 10–3–101 Ω·cm. Integrating the contribution of silicon intrinsic properties in the existing MACE mechanism explicitly accounts for the new findings and contradictions with previous studies. The as-generated mesoporous structures emit red light under laser excitation at room temperature. The red-color emission sensitively varies with temperature over a range of 16–300 K, attributed to a temperature-dependent photoluminescent mechanism.</description><identifier>ISSN: 1530-6984</identifier><identifier>EISSN: 1530-6992</identifier><identifier>DOI: 10.1021/nl202674t</identifier><identifier>PMID: 22007902</identifier><language>eng</language><publisher>Washington, DC: American Chemical Society</publisher><subject>Chemical etching ; Cross-disciplinary physics: materials science; rheology ; Electrical resistivity ; Emittance ; Etching ; Exact sciences and technology ; Lasers ; Materials science ; Nanocrystalline materials ; Nanoscale materials and structures: fabrication and characterization ; Nanostructure ; Nanowires ; Photoluminescence ; Physics ; Quantum wires ; Silicon</subject><ispartof>Nano letters, 2011-12, Vol.11 (12), p.5252-5258</ispartof><rights>Copyright © 2011 American Chemical Society</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a443t-283da11dbd7e010052d4c9d7f020e6c2e4d5bb5cea3be56e7068b74d239b173d3</citedby><cites>FETCH-LOGICAL-a443t-283da11dbd7e010052d4c9d7f020e6c2e4d5bb5cea3be56e7068b74d239b173d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/nl202674t$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/nl202674t$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,776,780,2752,27053,27901,27902,56713,56763</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=25314249$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/22007902$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>To, Wai-Keung</creatorcontrib><creatorcontrib>Tsang, Chi-Him</creatorcontrib><creatorcontrib>Li, Hau-Hau</creatorcontrib><creatorcontrib>Huang, Zhifeng</creatorcontrib><title>Fabrication of n-Type Mesoporous Silicon Nanowires by One-Step Etching</title><title>Nano letters</title><addtitle>Nano Lett</addtitle><description>In general, n-type mesoporous silicon nanowires (mp-SiNWs) are exclusively created by the two-step metal-assisted chemical etching (MACE). This work first reports that one-step MACE (in HF and AgNO3) is also capable of producing the n-type mp-SiNWs, and the developed formula is generally adapted to generate SiNWs by etching n-Si(100) with electrical resistivity over a range of 10–3–101 Ω·cm. Integrating the contribution of silicon intrinsic properties in the existing MACE mechanism explicitly accounts for the new findings and contradictions with previous studies. The as-generated mesoporous structures emit red light under laser excitation at room temperature. The red-color emission sensitively varies with temperature over a range of 16–300 K, attributed to a temperature-dependent photoluminescent mechanism.</description><subject>Chemical etching</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electrical resistivity</subject><subject>Emittance</subject><subject>Etching</subject><subject>Exact sciences and technology</subject><subject>Lasers</subject><subject>Materials science</subject><subject>Nanocrystalline materials</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Nanostructure</subject><subject>Nanowires</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Quantum wires</subject><subject>Silicon</subject><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp90EtLw0AQB_BFFN8Hv4DkIuohOvtI0j1KsSqoPajnsI-JrqS7cTdF-u2NtNaLeJqB-TEz_Ak5onBBgdFL3zJgZSX6DbJLCw55KSXbXPcjsUP2UnoHAMkL2CY7jAFUEtgumUyUjs6o3gWfhSbz-fOiw-wBU-hCDPOUPbnWmWH4qHz4dBFTphfZ1GP-1GOXXffmzfnXA7LVqDbh4aruk5fJ9fP4Nr-f3tyNr-5zJQTvczbiVlFqta0QKEDBrDDSVg0wwNIwFLbQujCouMaixArKka6EZVxqWnHL98npcm8Xw8ccU1_PXDLYtsrj8GwtKZV8JAAGefavpFXJoKBSlgM9X1ITQ0oRm7qLbqbioqZQfwdcrwMe7PFq7VzP0K7lT6IDOFkBlYxqm6i8cenXFZwKJuSvUybV72Ee_ZDbHwe_ALTAjUo</recordid><startdate>20111214</startdate><enddate>20111214</enddate><creator>To, Wai-Keung</creator><creator>Tsang, Chi-Him</creator><creator>Li, Hau-Hau</creator><creator>Huang, Zhifeng</creator><general>American Chemical Society</general><scope>IQODW</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>7X8</scope></search><sort><creationdate>20111214</creationdate><title>Fabrication of n-Type Mesoporous Silicon Nanowires by One-Step Etching</title><author>To, Wai-Keung ; Tsang, Chi-Him ; Li, Hau-Hau ; Huang, Zhifeng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a443t-283da11dbd7e010052d4c9d7f020e6c2e4d5bb5cea3be56e7068b74d239b173d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Chemical etching</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Electrical resistivity</topic><topic>Emittance</topic><topic>Etching</topic><topic>Exact sciences and technology</topic><topic>Lasers</topic><topic>Materials science</topic><topic>Nanocrystalline materials</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>Nanostructure</topic><topic>Nanowires</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Quantum wires</topic><topic>Silicon</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>To, Wai-Keung</creatorcontrib><creatorcontrib>Tsang, Chi-Him</creatorcontrib><creatorcontrib>Li, Hau-Hau</creatorcontrib><creatorcontrib>Huang, Zhifeng</creatorcontrib><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>Nano letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>To, Wai-Keung</au><au>Tsang, Chi-Him</au><au>Li, Hau-Hau</au><au>Huang, Zhifeng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication of n-Type Mesoporous Silicon Nanowires by One-Step Etching</atitle><jtitle>Nano letters</jtitle><addtitle>Nano Lett</addtitle><date>2011-12-14</date><risdate>2011</risdate><volume>11</volume><issue>12</issue><spage>5252</spage><epage>5258</epage><pages>5252-5258</pages><issn>1530-6984</issn><eissn>1530-6992</eissn><abstract>In general, n-type mesoporous silicon nanowires (mp-SiNWs) are exclusively created by the two-step metal-assisted chemical etching (MACE). This work first reports that one-step MACE (in HF and AgNO3) is also capable of producing the n-type mp-SiNWs, and the developed formula is generally adapted to generate SiNWs by etching n-Si(100) with electrical resistivity over a range of 10–3–101 Ω·cm. Integrating the contribution of silicon intrinsic properties in the existing MACE mechanism explicitly accounts for the new findings and contradictions with previous studies. The as-generated mesoporous structures emit red light under laser excitation at room temperature. The red-color emission sensitively varies with temperature over a range of 16–300 K, attributed to a temperature-dependent photoluminescent mechanism.</abstract><cop>Washington, DC</cop><pub>American Chemical Society</pub><pmid>22007902</pmid><doi>10.1021/nl202674t</doi><tpages>7</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1530-6984 |
| ispartof | Nano letters, 2011-12, Vol.11 (12), p.5252-5258 |
| issn | 1530-6984 1530-6992 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_911938400 |
| source | ACS Publications |
| subjects | Chemical etching Cross-disciplinary physics: materials science rheology Electrical resistivity Emittance Etching Exact sciences and technology Lasers Materials science Nanocrystalline materials Nanoscale materials and structures: fabrication and characterization Nanostructure Nanowires Photoluminescence Physics Quantum wires Silicon |
| title | Fabrication of n-Type Mesoporous Silicon Nanowires by One-Step Etching |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T17%3A32%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Fabrication%20of%20n-Type%20Mesoporous%20Silicon%20Nanowires%20by%20One-Step%20Etching&rft.jtitle=Nano%20letters&rft.au=To,%20Wai-Keung&rft.date=2011-12-14&rft.volume=11&rft.issue=12&rft.spage=5252&rft.epage=5258&rft.pages=5252-5258&rft.issn=1530-6984&rft.eissn=1530-6992&rft_id=info:doi/10.1021/nl202674t&rft_dat=%3Cproquest_cross%3E911938400%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1762051996&rft_id=info:pmid/22007902&rfr_iscdi=true |