Low-frequency noises in GaAs MESFET’s currents associated with substrate conductivity and channel-substrate junction

Low-frequency noises in GaAs MESFET are usually observed when investigating the drain current and substrate leakage current under sidegate bias conditions. Experimental results show that the magnitude of low-frequency noises is in a direct dependency upon the sidegate bias and the noises in drain cu...

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Veröffentlicht in:	Chinese science bulletin 2011-04, Vol.56 (12), p.1267-1271
Hauptverfasser:	Ding, Yong, Yan, XiaoLang
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry/Food Science Earth Sciences electric current electronic equipment Engineering Humanities and Social Sciences Life Sciences multidisciplinary Physics Science Science (multidisciplinary) temporal variation
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creator	Ding, Yong Yan, XiaoLang
description	Low-frequency noises in GaAs MESFET are usually observed when investigating the drain current and substrate leakage current under sidegate bias conditions. Experimental results show that the magnitude of low-frequency noises is in a direct dependency upon the sidegate bias and the noises in drain current will disappear if sidegate bias increases more negatively beyond a certain voltage. A mechanism associated with the substrate conductivity and the channel-substrate junction modulated by sidegate bias is proposed to explain the fluctuation of low-frequency noises.
doi_str_mv	10.1007/s11434-010-4148-6
format	Article
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subjects	Chemistry/Food Science Earth Sciences electric current electronic equipment Engineering Humanities and Social Sciences Life Sciences multidisciplinary Physics Science Science (multidisciplinary) temporal variation
title	Low-frequency noises in GaAs MESFET’s currents associated with substrate conductivity and channel-substrate junction
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