Plasma-etching profile model for SiO sub(2) contact holes

A theoretical plasma-etching model for contact holes (vias) is presented. The significant feature of this model is that the etch and deposition rates are given by analytical equations. The etch-profile simulations for the contact holes are computed from the trajectory equations of the surface-evolut...

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Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on plasma science 2002-01, Vol.30 (4)
Hauptverfasser:	Liu, Chunli, Abraham-Shrauner, B
Format:	Artikel
Sprache:	eng
Schlagworte:	Computer simulation Contact holes Etching Fluxes Mathematical analysis Mathematical models Matlab Silicon dioxide
Online-Zugang:	Volltext
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