ZnSTeSe metal-semiconductor-metal photodetectors

High-quality quaternary ZnSTeSe epitaxial layers were successfully grown by molecular beam epitaxy (MBE). It was found that a ZnS/sub 0.18/Se/sub 0.82/ layer was automatically formed in between the ZnSe buffer layer, and the ZnS/sub 0.17/Te/sub 0.08/Se/sub 0.75/ epitaxial layer, when we increased th...

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Bibliographische Detailangaben
Veröffentlicht in:	IEEE photonics technology letters 2002-02, Vol.14 (2), p.188-190
Hauptverfasser:	Chang, S.J., Su, Y.K., Chen, W.R., Chen, J.F., Lan, W.H., Lin, W.J., Cherng, Y.T., Liu, C.H., Liaw, U.H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bias Dark current Epitaxial layers Gallium arsenide Molecular beam epitaxial growth Molecular beam epitaxy P-i-n diodes Photocurrent Photodetectors Photodiodes Photoelectric effect Photonic band gap Spectra Substrates Tellurium Zinc compounds
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