ZnSTeSe metal-semiconductor-metal photodetectors
High-quality quaternary ZnSTeSe epitaxial layers were successfully grown by molecular beam epitaxy (MBE). It was found that a ZnS/sub 0.18/Se/sub 0.82/ layer was automatically formed in between the ZnSe buffer layer, and the ZnS/sub 0.17/Te/sub 0.08/Se/sub 0.75/ epitaxial layer, when we increased th...
Gespeichert in:
| Veröffentlicht in: | IEEE photonics technology letters 2002-02, Vol.14 (2), p.188-190 |
|---|---|
| Hauptverfasser: | , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 190 |
|---|---|
| container_issue | 2 |
| container_start_page | 188 |
| container_title | IEEE photonics technology letters |
| container_volume | 14 |
| creator | Chang, S.J. Su, Y.K. Chen, W.R. Chen, J.F. Lan, W.H. Lin, W.J. Cherng, Y.T. Liu, C.H. Liaw, U.H. |
| description | High-quality quaternary ZnSTeSe epitaxial layers were successfully grown by molecular beam epitaxy (MBE). It was found that a ZnS/sub 0.18/Se/sub 0.82/ layer was automatically formed in between the ZnSe buffer layer, and the ZnS/sub 0.17/Te/sub 0.08/Se/sub 0.75/ epitaxial layer, when we increased the ZnS cell temperature. ZnSTeSe metal-semiconductor-metal (MSM) photodetectors were also fabricated for the first time. It was found that we could achieve a photocurrent to dark current contrast higher than five orders of magnitude by applying a 10-V reverse bias. We also found that the maximum photoresponsivity is about 0.4 A/W under a 10-V reverse bias. Such a value suggests that the ZnSTeSe MSM photodetector is potentially useful in the blue-UV spectral region. |
| doi_str_mv | 10.1109/68.980508 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_907954920</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>980508</ieee_id><sourcerecordid>907954920</sourcerecordid><originalsourceid>FETCH-LOGICAL-c367t-52befa88423d11a7012cbc3b0d103886da85b99e4cefa89b7f790225c0a72aa23</originalsourceid><addsrcrecordid>eNqF0T1PwzAQBmALgUQpDKxMFQOIIeX8kdgeUcWXVImhZWGxHOciUiVxidOBf49DKgYGmO509-ikV0fIOYU5paBvMzXXClJQB2RCtaAJUCkOYw-xp5Snx-QkhA0AFSkXEwJv7WqNK5w12Ns6CdhUzrfFzvW-S75ns-27732BPQ6zcEqOSlsHPNvXKXl9uF8vnpLly-Pz4m6ZOJ7JPklZjqVVSjBeUGolUOZyx3MoKHClssKqNNcahRuYzmUpNTCWOrCSWcv4lFyPd7ed_9hh6E1TBYd1bVv0u2A0SJ0KzSDKqz8lUzKLeen_UMaTKlMRXv6CG7_r2hjXxESCC4AB3YzIdT6EDkuz7arGdp-Gghl-YTJlxl9EezHaChF_3H75BTZWgfw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>884434008</pqid></control><display><type>article</type><title>ZnSTeSe metal-semiconductor-metal photodetectors</title><source>IEEE Electronic Library (IEL)</source><creator>Chang, S.J. ; Su, Y.K. ; Chen, W.R. ; Chen, J.F. ; Lan, W.H. ; Lin, W.J. ; Cherng, Y.T. ; Liu, C.H. ; Liaw, U.H.</creator><creatorcontrib>Chang, S.J. ; Su, Y.K. ; Chen, W.R. ; Chen, J.F. ; Lan, W.H. ; Lin, W.J. ; Cherng, Y.T. ; Liu, C.H. ; Liaw, U.H.</creatorcontrib><description>High-quality quaternary ZnSTeSe epitaxial layers were successfully grown by molecular beam epitaxy (MBE). It was found that a ZnS/sub 0.18/Se/sub 0.82/ layer was automatically formed in between the ZnSe buffer layer, and the ZnS/sub 0.17/Te/sub 0.08/Se/sub 0.75/ epitaxial layer, when we increased the ZnS cell temperature. ZnSTeSe metal-semiconductor-metal (MSM) photodetectors were also fabricated for the first time. It was found that we could achieve a photocurrent to dark current contrast higher than five orders of magnitude by applying a 10-V reverse bias. We also found that the maximum photoresponsivity is about 0.4 A/W under a 10-V reverse bias. Such a value suggests that the ZnSTeSe MSM photodetector is potentially useful in the blue-UV spectral region.</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/68.980508</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Bias ; Dark current ; Epitaxial layers ; Gallium arsenide ; Molecular beam epitaxial growth ; Molecular beam epitaxy ; P-i-n diodes ; Photocurrent ; Photodetectors ; Photodiodes ; Photoelectric effect ; Photonic band gap ; Spectra ; Substrates ; Tellurium ; Zinc compounds</subject><ispartof>IEEE photonics technology letters, 2002-02, Vol.14 (2), p.188-190</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2002</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c367t-52befa88423d11a7012cbc3b0d103886da85b99e4cefa89b7f790225c0a72aa23</citedby><cites>FETCH-LOGICAL-c367t-52befa88423d11a7012cbc3b0d103886da85b99e4cefa89b7f790225c0a72aa23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/980508$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54737</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/980508$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chang, S.J.</creatorcontrib><creatorcontrib>Su, Y.K.</creatorcontrib><creatorcontrib>Chen, W.R.</creatorcontrib><creatorcontrib>Chen, J.F.</creatorcontrib><creatorcontrib>Lan, W.H.</creatorcontrib><creatorcontrib>Lin, W.J.</creatorcontrib><creatorcontrib>Cherng, Y.T.</creatorcontrib><creatorcontrib>Liu, C.H.</creatorcontrib><creatorcontrib>Liaw, U.H.</creatorcontrib><title>ZnSTeSe metal-semiconductor-metal photodetectors</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>High-quality quaternary ZnSTeSe epitaxial layers were successfully grown by molecular beam epitaxy (MBE). It was found that a ZnS/sub 0.18/Se/sub 0.82/ layer was automatically formed in between the ZnSe buffer layer, and the ZnS/sub 0.17/Te/sub 0.08/Se/sub 0.75/ epitaxial layer, when we increased the ZnS cell temperature. ZnSTeSe metal-semiconductor-metal (MSM) photodetectors were also fabricated for the first time. It was found that we could achieve a photocurrent to dark current contrast higher than five orders of magnitude by applying a 10-V reverse bias. We also found that the maximum photoresponsivity is about 0.4 A/W under a 10-V reverse bias. Such a value suggests that the ZnSTeSe MSM photodetector is potentially useful in the blue-UV spectral region.</description><subject>Bias</subject><subject>Dark current</subject><subject>Epitaxial layers</subject><subject>Gallium arsenide</subject><subject>Molecular beam epitaxial growth</subject><subject>Molecular beam epitaxy</subject><subject>P-i-n diodes</subject><subject>Photocurrent</subject><subject>Photodetectors</subject><subject>Photodiodes</subject><subject>Photoelectric effect</subject><subject>Photonic band gap</subject><subject>Spectra</subject><subject>Substrates</subject><subject>Tellurium</subject><subject>Zinc compounds</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqF0T1PwzAQBmALgUQpDKxMFQOIIeX8kdgeUcWXVImhZWGxHOciUiVxidOBf49DKgYGmO509-ikV0fIOYU5paBvMzXXClJQB2RCtaAJUCkOYw-xp5Snx-QkhA0AFSkXEwJv7WqNK5w12Ns6CdhUzrfFzvW-S75ns-27732BPQ6zcEqOSlsHPNvXKXl9uF8vnpLly-Pz4m6ZOJ7JPklZjqVVSjBeUGolUOZyx3MoKHClssKqNNcahRuYzmUpNTCWOrCSWcv4lFyPd7ed_9hh6E1TBYd1bVv0u2A0SJ0KzSDKqz8lUzKLeen_UMaTKlMRXv6CG7_r2hjXxESCC4AB3YzIdT6EDkuz7arGdp-Gghl-YTJlxl9EezHaChF_3H75BTZWgfw</recordid><startdate>20020201</startdate><enddate>20020201</enddate><creator>Chang, S.J.</creator><creator>Su, Y.K.</creator><creator>Chen, W.R.</creator><creator>Chen, J.F.</creator><creator>Lan, W.H.</creator><creator>Lin, W.J.</creator><creator>Cherng, Y.T.</creator><creator>Liu, C.H.</creator><creator>Liaw, U.H.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>H8D</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20020201</creationdate><title>ZnSTeSe metal-semiconductor-metal photodetectors</title><author>Chang, S.J. ; Su, Y.K. ; Chen, W.R. ; Chen, J.F. ; Lan, W.H. ; Lin, W.J. ; Cherng, Y.T. ; Liu, C.H. ; Liaw, U.H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c367t-52befa88423d11a7012cbc3b0d103886da85b99e4cefa89b7f790225c0a72aa23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Bias</topic><topic>Dark current</topic><topic>Epitaxial layers</topic><topic>Gallium arsenide</topic><topic>Molecular beam epitaxial growth</topic><topic>Molecular beam epitaxy</topic><topic>P-i-n diodes</topic><topic>Photocurrent</topic><topic>Photodetectors</topic><topic>Photodiodes</topic><topic>Photoelectric effect</topic><topic>Photonic band gap</topic><topic>Spectra</topic><topic>Substrates</topic><topic>Tellurium</topic><topic>Zinc compounds</topic><toplevel>online_resources</toplevel><creatorcontrib>Chang, S.J.</creatorcontrib><creatorcontrib>Su, Y.K.</creatorcontrib><creatorcontrib>Chen, W.R.</creatorcontrib><creatorcontrib>Chen, J.F.</creatorcontrib><creatorcontrib>Lan, W.H.</creatorcontrib><creatorcontrib>Lin, W.J.</creatorcontrib><creatorcontrib>Cherng, Y.T.</creatorcontrib><creatorcontrib>Liu, C.H.</creatorcontrib><creatorcontrib>Liaw, U.H.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aerospace Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chang, S.J.</au><au>Su, Y.K.</au><au>Chen, W.R.</au><au>Chen, J.F.</au><au>Lan, W.H.</au><au>Lin, W.J.</au><au>Cherng, Y.T.</au><au>Liu, C.H.</au><au>Liaw, U.H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>ZnSTeSe metal-semiconductor-metal photodetectors</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>2002-02-01</date><risdate>2002</risdate><volume>14</volume><issue>2</issue><spage>188</spage><epage>190</epage><pages>188-190</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>High-quality quaternary ZnSTeSe epitaxial layers were successfully grown by molecular beam epitaxy (MBE). It was found that a ZnS/sub 0.18/Se/sub 0.82/ layer was automatically formed in between the ZnSe buffer layer, and the ZnS/sub 0.17/Te/sub 0.08/Se/sub 0.75/ epitaxial layer, when we increased the ZnS cell temperature. ZnSTeSe metal-semiconductor-metal (MSM) photodetectors were also fabricated for the first time. It was found that we could achieve a photocurrent to dark current contrast higher than five orders of magnitude by applying a 10-V reverse bias. We also found that the maximum photoresponsivity is about 0.4 A/W under a 10-V reverse bias. Such a value suggests that the ZnSTeSe MSM photodetector is potentially useful in the blue-UV spectral region.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/68.980508</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1041-1135 |
| ispartof | IEEE photonics technology letters, 2002-02, Vol.14 (2), p.188-190 |
| issn | 1041-1135 1941-0174 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_907954920 |
| source | IEEE Electronic Library (IEL) |
| subjects | Bias Dark current Epitaxial layers Gallium arsenide Molecular beam epitaxial growth Molecular beam epitaxy P-i-n diodes Photocurrent Photodetectors Photodiodes Photoelectric effect Photonic band gap Spectra Substrates Tellurium Zinc compounds |
| title | ZnSTeSe metal-semiconductor-metal photodetectors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-21T19%3A42%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=ZnSTeSe%20metal-semiconductor-metal%20photodetectors&rft.jtitle=IEEE%20photonics%20technology%20letters&rft.au=Chang,%20S.J.&rft.date=2002-02-01&rft.volume=14&rft.issue=2&rft.spage=188&rft.epage=190&rft.pages=188-190&rft.issn=1041-1135&rft.eissn=1941-0174&rft.coden=IPTLEL&rft_id=info:doi/10.1109/68.980508&rft_dat=%3Cproquest_RIE%3E907954920%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=884434008&rft_id=info:pmid/&rft_ieee_id=980508&rfr_iscdi=true |