An analytical small-signal bias-dependent nonuniform model for p-i-n traveling-wave photodetectors

A fully analytical small-signal model is developed for the frequency response of traveling-wave photodetectors. It takes into account the dependence of the equivalent transmission-line admittance on the position, induced by the nonuniform distribution of the optical beam along the traveling directio...

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Veröffentlicht in:	IEEE transactions on microwave theory and techniques 2002-11, Vol.50 (11), p.2553-2557
Hauptverfasser:	Torrese, G., Huynen, I., Serres, M., Gallagher, D., Banham, M., Vorst, A.V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Admittance Bandwidth Beams (radiation) Electric potential Equivalence High speed optical techniques Laboratories Mathematical analysis Microwaves Nonuniform Optical saturation Optical waveguides Photodetectors PIN photodiodes Transmission lines Voltage
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Beschreibung
Zusammenfassung:	A fully analytical small-signal model is developed for the frequency response of traveling-wave photodetectors. It takes into account the dependence of the equivalent transmission-line admittance on the position, induced by the nonuniform distribution of the optical beam along the traveling direction. Moreover, the influence of the bias voltage on the transit time has been accurately investigated. The model is applied to the design of an InAlAs-InGaAs p-i-n photodetector. Its performances are investigated in term of electrical bandwidth.
ISSN:	0018-9480 1557-9670
DOI:	10.1109/TMTT.2002.804640