Electrical memory features of ferromagnetic CoFeAlSi nano-particles embedded in metal-oxide-semiconductor matrix

Half-metallic Heusler material Co 2FeAl 0.5Si 0.5 (CFAS) nano-particles (NPs) embedded in metal-oxide-semiconductor (MOS) structures with thin HfO 2 tunneling and MgO control oxides were investigated. The CFAS NPs were prepared by rapid thermal annealing. The formation of well-controlled CFAS NPs on...

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Veröffentlicht in:	Thin solid films 2011-07, Vol.519 (18), p.6160-6163
Hauptverfasser:	Lee, JaBin, Kim, KiWoong, Lee, JunSeok, An, GwangGuk, Hong, JinPyo
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic force microscopy Capacitance–voltage Co2FeAl0.5Si0.5 Hafnium oxide Heusler material Magnesium oxide Metal-oxide-semiconductor Nanocomposites Nanomaterials Nanoparticles Nanostructure Oxides Sputtering Tunneling
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