Influences of process parameters on texture and microstructure of NiO films

The experimental result shows that the preferred orientations of NiO thin films are closely related to the working pressure of argon. All of NiO(111), NiO(200), and NiO(220) diffraction peaks are observed in the XRD patterns and exhibited random orientation of NiO film when the film is deposited in...

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Veröffentlicht in:	Thin solid films 2011-05, Vol.519 (15), p.4940-4943
Hauptverfasser:	Kuo, T.Y., Chen, S.C., Peng, W.C., Lin, Y.C., Lin, H.C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Deposition Deposition by sputtering Diffraction patterns Exact sciences and technology Glass substrate Lattice parameters Materials science Methods of deposition of films and coatings film growth and epitaxy Microstructure NiO films Physics Process parameters rf magnetron sputtering Structure and morphology thickness Surface layer Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Texture Thin film structure and morphology Thin films
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container_end_page	4943
container_issue	15
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container_title	Thin solid films
container_volume	519
creator	Kuo, T.Y. Chen, S.C. Peng, W.C. Lin, Y.C. Lin, H.C.
description	The experimental result shows that the preferred orientations of NiO thin films are closely related to the working pressure of argon. All of NiO(111), NiO(200), and NiO(220) diffraction peaks are observed in the XRD patterns and exhibited random orientation of NiO film when the film is deposited in low Ar pressure of 0.67 Pa. As the Ar pressure is increased to 2.67 Pa, only the NiO(200) peak appears and shows (200)-textured NiO films. However, the lattice parameter of NiO film deposited in high Ar pressure of 2.67 Pa is 0.426 nm, which is much larger than that of the NiO bulk (0.417 nm). The lattice parameter can be reduced by post-annealing the film because the interstitial Ar atoms are released from the NiO lattice, decreasing continuously from 0.423 to 0.417 nm as the NiO films are annealed by rapid thermal annealing (RTA) from 300 to 600 °C.
doi_str_mv	10.1016/j.tsf.2011.01.057
format	Article
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All of NiO(111), NiO(200), and NiO(220) diffraction peaks are observed in the XRD patterns and exhibited random orientation of NiO film when the film is deposited in low Ar pressure of 0.67 Pa. As the Ar pressure is increased to 2.67 Pa, only the NiO(200) peak appears and shows (200)-textured NiO films. However, the lattice parameter of NiO film deposited in high Ar pressure of 2.67 Pa is 0.426 nm, which is much larger than that of the NiO bulk (0.417 nm). 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The lattice parameter can be reduced by post-annealing the film because the interstitial Ar atoms are released from the NiO lattice, decreasing continuously from 0.423 to 0.417 nm as the NiO films are annealed by rapid thermal annealing (RTA) from 300 to 600 °C.</description><subject>Annealing</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Deposition</subject><subject>Deposition by sputtering</subject><subject>Diffraction patterns</subject><subject>Exact sciences and technology</subject><subject>Glass substrate</subject><subject>Lattice parameters</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Microstructure</subject><subject>NiO films</subject><subject>Physics</subject><subject>Process parameters</subject><subject>rf magnetron sputtering</subject><subject>Structure and morphology; 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Chen, S.C. ; Peng, W.C. ; Lin, Y.C. ; Lin, H.C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c402t-e4e60b45390296222b6b748e3e183ed31a097248a3bdf465f9f01d7f8110849a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Annealing</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Deposition</topic><topic>Deposition by sputtering</topic><topic>Diffraction patterns</topic><topic>Exact sciences and technology</topic><topic>Glass substrate</topic><topic>Lattice parameters</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Microstructure</topic><topic>NiO films</topic><topic>Physics</topic><topic>Process parameters</topic><topic>rf magnetron sputtering</topic><topic>Structure and morphology; thickness</topic><topic>Surface layer</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Texture</topic><topic>Thin film structure and morphology</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kuo, T.Y.</creatorcontrib><creatorcontrib>Chen, S.C.</creatorcontrib><creatorcontrib>Peng, W.C.</creatorcontrib><creatorcontrib>Lin, Y.C.</creatorcontrib><creatorcontrib>Lin, H.C.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kuo, T.Y.</au><au>Chen, S.C.</au><au>Peng, W.C.</au><au>Lin, Y.C.</au><au>Lin, H.C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influences of process parameters on texture and microstructure of NiO films</atitle><jtitle>Thin solid films</jtitle><date>2011-05-31</date><risdate>2011</risdate><volume>519</volume><issue>15</issue><spage>4940</spage><epage>4943</epage><pages>4940-4943</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>The experimental result shows that the preferred orientations of NiO thin films are closely related to the working pressure of argon. All of NiO(111), NiO(200), and NiO(220) diffraction peaks are observed in the XRD patterns and exhibited random orientation of NiO film when the film is deposited in low Ar pressure of 0.67 Pa. As the Ar pressure is increased to 2.67 Pa, only the NiO(200) peak appears and shows (200)-textured NiO films. However, the lattice parameter of NiO film deposited in high Ar pressure of 2.67 Pa is 0.426 nm, which is much larger than that of the NiO bulk (0.417 nm). The lattice parameter can be reduced by post-annealing the film because the interstitial Ar atoms are released from the NiO lattice, decreasing continuously from 0.423 to 0.417 nm as the NiO films are annealed by rapid thermal annealing (RTA) from 300 to 600 °C.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2011.01.057</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record>
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subjects	Annealing Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Deposition Deposition by sputtering Diffraction patterns Exact sciences and technology Glass substrate Lattice parameters Materials science Methods of deposition of films and coatings film growth and epitaxy Microstructure NiO films Physics Process parameters rf magnetron sputtering Structure and morphology thickness Surface layer Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Texture Thin film structure and morphology Thin films
title	Influences of process parameters on texture and microstructure of NiO films
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