Growth of n-type γ-CuCl with improved carrier concentration by pulsed DC sputtering: Structural, electronic and UV emission properties

γ Copper (I) chloride is naturally a direct band gap, zincblende and p-type semiconductor material with much potential in linear and non-linear optical applications owing to its large free excitonic binding energy. In order to fabricate an efficient electrically pumped emitter, a combination of both...

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Veröffentlicht in:	Thin solid films 2011-07, Vol.519 (18), p.6064-6068
Hauptverfasser:	Rajani, K.V., Olabanji Lucas, F., Daniels, S., Danieluk, D., Bradley, A.L., Cowley, A., Alam, M.M., McNally, P.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier density Chlorides Direct current Doped films Magnetron sputtering n-type CuCl thin films P-type semiconductors Photoluminescence Semiconductor Sputtering Zinc
Online-Zugang:	Volltext
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