Catalyst-free ZnO nanowires grown on a-plane GaN
ZnO nanowires were grown on a-plane GaN templates by chemical vapor deposition (CVD) without employing a catalyst. The a-plane GaN templates were pre-deposited on an r-plane sapphire substrate by metal-organic CVD. The resulting ZnO nanowires grow in angles off- related to the GaN basal plane. X-ray...
Gespeichert in:
| Veröffentlicht in: | Vacuum 2010-02, Vol.84 (6), p.803-806 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 806 |
|---|---|
| container_issue | 6 |
| container_start_page | 803 |
| container_title | Vacuum |
| container_volume | 84 |
| creator | Chen, C.W. Pan, C.J. Tsao, F.C. Liu, Y.L. Kuo, C.W. Kuo, C.H. Chi, G.C. Chen, P.H. Lai, W.C. Hsueh, T.H. Tun, C.J. Chang, C.Y. Pearton, S.J. Ren, F. |
| description | ZnO nanowires were grown on a-plane GaN templates by chemical vapor deposition (CVD) without employing a catalyst. The a-plane GaN templates were pre-deposited on an r-plane sapphire substrate by metal-organic CVD. The resulting ZnO nanowires grow in angles off- related to the GaN basal plane. X-ray diffraction (XRD) spectra showed that the ZnO layer was grown with a heteroepitaxial relationship of (110)
ZnO||(110)
GaN. Photoluminescence spectra measured at 17
K exhibited near-band-edge emission at 372
nm with a full width at half maximum of 10
nm. The growth mechanism on a-GaN was the Volmer-Weber (VW) mode and differed from the Stranski-Krastanow (SK) mode observed for growth on c-GaN. This difference results from the higher interfacial free-energy on the a-plane between ZnO and GaN than that on the c-plane orientation. |
| doi_str_mv | 10.1016/j.vacuum.2009.10.043 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_907934587</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0042207X0900503X</els_id><sourcerecordid>907934587</sourcerecordid><originalsourceid>FETCH-LOGICAL-c404t-e52249f948f18b15996d552da3897eb433cd5ce919bed345f89c623606787d673</originalsourceid><addsrcrecordid>eNp9kE9Lw0AUxBdRsFa_gYfcPCW-3Wz2z0WQolUo9qIgXpbt5kVS0mzdTVr67U2IZ08PhpnhzY-QWwoZBSrut9nBur7fZQxAD1IGPD8jM6qkTpmkxTmZAXCWMpCfl-Qqxi0AMAFqRmBhO9ucYpdWATH5atdJa1t_rAPG5Dv4Y5v4NrHpvrEtJkv7dk0uKttEvPm7c_Lx_PS-eElX6-Xr4nGVOg68S7FgjOtKc1VRtaGF1qIsClbaXGmJG57nriwcaqo3WOa8qJR2guUChFSyFDKfk7updx_8T4-xM7s6OmzGP3wfjQaph5wanXxyuuBjDFiZfah3NpwMBTPyMVsz8TEjn1Ed-AyxhymGw4pDjcFEV2PrsBy2u86Uvv6_4BcFy25g</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>907934587</pqid></control><display><type>article</type><title>Catalyst-free ZnO nanowires grown on a-plane GaN</title><source>Elsevier ScienceDirect Journals Complete</source><creator>Chen, C.W. ; Pan, C.J. ; Tsao, F.C. ; Liu, Y.L. ; Kuo, C.W. ; Kuo, C.H. ; Chi, G.C. ; Chen, P.H. ; Lai, W.C. ; Hsueh, T.H. ; Tun, C.J. ; Chang, C.Y. ; Pearton, S.J. ; Ren, F.</creator><creatorcontrib>Chen, C.W. ; Pan, C.J. ; Tsao, F.C. ; Liu, Y.L. ; Kuo, C.W. ; Kuo, C.H. ; Chi, G.C. ; Chen, P.H. ; Lai, W.C. ; Hsueh, T.H. ; Tun, C.J. ; Chang, C.Y. ; Pearton, S.J. ; Ren, F.</creatorcontrib><description>ZnO nanowires were grown on a-plane GaN templates by chemical vapor deposition (CVD) without employing a catalyst. The a-plane GaN templates were pre-deposited on an r-plane sapphire substrate by metal-organic CVD. The resulting ZnO nanowires grow in angles off- related to the GaN basal plane. X-ray diffraction (XRD) spectra showed that the ZnO layer was grown with a heteroepitaxial relationship of (110)
ZnO||(110)
GaN. Photoluminescence spectra measured at 17
K exhibited near-band-edge emission at 372
nm with a full width at half maximum of 10
nm. The growth mechanism on a-GaN was the Volmer-Weber (VW) mode and differed from the Stranski-Krastanow (SK) mode observed for growth on c-GaN. This difference results from the higher interfacial free-energy on the a-plane between ZnO and GaN than that on the c-plane orientation.</description><identifier>ISSN: 0042-207X</identifier><identifier>EISSN: 1879-2715</identifier><identifier>DOI: 10.1016/j.vacuum.2009.10.043</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><subject>Catalysts ; Chemical vapor deposition ; Diffraction ; Gallium nitrides ; Nanowires ; Spectra ; X-rays ; Zinc oxide ; ZnO nanowires</subject><ispartof>Vacuum, 2010-02, Vol.84 (6), p.803-806</ispartof><rights>2009 Elsevier Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c404t-e52249f948f18b15996d552da3897eb433cd5ce919bed345f89c623606787d673</citedby><cites>FETCH-LOGICAL-c404t-e52249f948f18b15996d552da3897eb433cd5ce919bed345f89c623606787d673</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.vacuum.2009.10.043$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3536,27903,27904,45974</link.rule.ids></links><search><creatorcontrib>Chen, C.W.</creatorcontrib><creatorcontrib>Pan, C.J.</creatorcontrib><creatorcontrib>Tsao, F.C.</creatorcontrib><creatorcontrib>Liu, Y.L.</creatorcontrib><creatorcontrib>Kuo, C.W.</creatorcontrib><creatorcontrib>Kuo, C.H.</creatorcontrib><creatorcontrib>Chi, G.C.</creatorcontrib><creatorcontrib>Chen, P.H.</creatorcontrib><creatorcontrib>Lai, W.C.</creatorcontrib><creatorcontrib>Hsueh, T.H.</creatorcontrib><creatorcontrib>Tun, C.J.</creatorcontrib><creatorcontrib>Chang, C.Y.</creatorcontrib><creatorcontrib>Pearton, S.J.</creatorcontrib><creatorcontrib>Ren, F.</creatorcontrib><title>Catalyst-free ZnO nanowires grown on a-plane GaN</title><title>Vacuum</title><description>ZnO nanowires were grown on a-plane GaN templates by chemical vapor deposition (CVD) without employing a catalyst. The a-plane GaN templates were pre-deposited on an r-plane sapphire substrate by metal-organic CVD. The resulting ZnO nanowires grow in angles off- related to the GaN basal plane. X-ray diffraction (XRD) spectra showed that the ZnO layer was grown with a heteroepitaxial relationship of (110)
ZnO||(110)
GaN. Photoluminescence spectra measured at 17
K exhibited near-band-edge emission at 372
nm with a full width at half maximum of 10
nm. The growth mechanism on a-GaN was the Volmer-Weber (VW) mode and differed from the Stranski-Krastanow (SK) mode observed for growth on c-GaN. This difference results from the higher interfacial free-energy on the a-plane between ZnO and GaN than that on the c-plane orientation.</description><subject>Catalysts</subject><subject>Chemical vapor deposition</subject><subject>Diffraction</subject><subject>Gallium nitrides</subject><subject>Nanowires</subject><subject>Spectra</subject><subject>X-rays</subject><subject>Zinc oxide</subject><subject>ZnO nanowires</subject><issn>0042-207X</issn><issn>1879-2715</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kE9Lw0AUxBdRsFa_gYfcPCW-3Wz2z0WQolUo9qIgXpbt5kVS0mzdTVr67U2IZ08PhpnhzY-QWwoZBSrut9nBur7fZQxAD1IGPD8jM6qkTpmkxTmZAXCWMpCfl-Qqxi0AMAFqRmBhO9ucYpdWATH5atdJa1t_rAPG5Dv4Y5v4NrHpvrEtJkv7dk0uKttEvPm7c_Lx_PS-eElX6-Xr4nGVOg68S7FgjOtKc1VRtaGF1qIsClbaXGmJG57nriwcaqo3WOa8qJR2guUChFSyFDKfk7updx_8T4-xM7s6OmzGP3wfjQaph5wanXxyuuBjDFiZfah3NpwMBTPyMVsz8TEjn1Ed-AyxhymGw4pDjcFEV2PrsBy2u86Uvv6_4BcFy25g</recordid><startdate>20100204</startdate><enddate>20100204</enddate><creator>Chen, C.W.</creator><creator>Pan, C.J.</creator><creator>Tsao, F.C.</creator><creator>Liu, Y.L.</creator><creator>Kuo, C.W.</creator><creator>Kuo, C.H.</creator><creator>Chi, G.C.</creator><creator>Chen, P.H.</creator><creator>Lai, W.C.</creator><creator>Hsueh, T.H.</creator><creator>Tun, C.J.</creator><creator>Chang, C.Y.</creator><creator>Pearton, S.J.</creator><creator>Ren, F.</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20100204</creationdate><title>Catalyst-free ZnO nanowires grown on a-plane GaN</title><author>Chen, C.W. ; Pan, C.J. ; Tsao, F.C. ; Liu, Y.L. ; Kuo, C.W. ; Kuo, C.H. ; Chi, G.C. ; Chen, P.H. ; Lai, W.C. ; Hsueh, T.H. ; Tun, C.J. ; Chang, C.Y. ; Pearton, S.J. ; Ren, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c404t-e52249f948f18b15996d552da3897eb433cd5ce919bed345f89c623606787d673</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Catalysts</topic><topic>Chemical vapor deposition</topic><topic>Diffraction</topic><topic>Gallium nitrides</topic><topic>Nanowires</topic><topic>Spectra</topic><topic>X-rays</topic><topic>Zinc oxide</topic><topic>ZnO nanowires</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, C.W.</creatorcontrib><creatorcontrib>Pan, C.J.</creatorcontrib><creatorcontrib>Tsao, F.C.</creatorcontrib><creatorcontrib>Liu, Y.L.</creatorcontrib><creatorcontrib>Kuo, C.W.</creatorcontrib><creatorcontrib>Kuo, C.H.</creatorcontrib><creatorcontrib>Chi, G.C.</creatorcontrib><creatorcontrib>Chen, P.H.</creatorcontrib><creatorcontrib>Lai, W.C.</creatorcontrib><creatorcontrib>Hsueh, T.H.</creatorcontrib><creatorcontrib>Tun, C.J.</creatorcontrib><creatorcontrib>Chang, C.Y.</creatorcontrib><creatorcontrib>Pearton, S.J.</creatorcontrib><creatorcontrib>Ren, F.</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Vacuum</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen, C.W.</au><au>Pan, C.J.</au><au>Tsao, F.C.</au><au>Liu, Y.L.</au><au>Kuo, C.W.</au><au>Kuo, C.H.</au><au>Chi, G.C.</au><au>Chen, P.H.</au><au>Lai, W.C.</au><au>Hsueh, T.H.</au><au>Tun, C.J.</au><au>Chang, C.Y.</au><au>Pearton, S.J.</au><au>Ren, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Catalyst-free ZnO nanowires grown on a-plane GaN</atitle><jtitle>Vacuum</jtitle><date>2010-02-04</date><risdate>2010</risdate><volume>84</volume><issue>6</issue><spage>803</spage><epage>806</epage><pages>803-806</pages><issn>0042-207X</issn><eissn>1879-2715</eissn><abstract>ZnO nanowires were grown on a-plane GaN templates by chemical vapor deposition (CVD) without employing a catalyst. The a-plane GaN templates were pre-deposited on an r-plane sapphire substrate by metal-organic CVD. The resulting ZnO nanowires grow in angles off- related to the GaN basal plane. X-ray diffraction (XRD) spectra showed that the ZnO layer was grown with a heteroepitaxial relationship of (110)
ZnO||(110)
GaN. Photoluminescence spectra measured at 17
K exhibited near-band-edge emission at 372
nm with a full width at half maximum of 10
nm. The growth mechanism on a-GaN was the Volmer-Weber (VW) mode and differed from the Stranski-Krastanow (SK) mode observed for growth on c-GaN. This difference results from the higher interfacial free-energy on the a-plane between ZnO and GaN than that on the c-plane orientation.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/j.vacuum.2009.10.043</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0042-207X |
| ispartof | Vacuum, 2010-02, Vol.84 (6), p.803-806 |
| issn | 0042-207X 1879-2715 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_907934587 |
| source | Elsevier ScienceDirect Journals Complete |
| subjects | Catalysts Chemical vapor deposition Diffraction Gallium nitrides Nanowires Spectra X-rays Zinc oxide ZnO nanowires |
| title | Catalyst-free ZnO nanowires grown on a-plane GaN |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T16%3A30%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Catalyst-free%20ZnO%20nanowires%20grown%20on%20a-plane%20GaN&rft.jtitle=Vacuum&rft.au=Chen,%20C.W.&rft.date=2010-02-04&rft.volume=84&rft.issue=6&rft.spage=803&rft.epage=806&rft.pages=803-806&rft.issn=0042-207X&rft.eissn=1879-2715&rft_id=info:doi/10.1016/j.vacuum.2009.10.043&rft_dat=%3Cproquest_cross%3E907934587%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=907934587&rft_id=info:pmid/&rft_els_id=S0042207X0900503X&rfr_iscdi=true |