Analysis of the parameters of deep centers in the Al/i-GaAs detectors of charged particles and X-ray radiation

The parameters of deep centers in the barrier structures based on intrinsic gallium arsenide that are used in the detectors of charged particles and X-ray radiation are studied via the methods of the deep-level transient spectroscopy (DLTS) and the low-frequency-noise spectroscopy. Two deep levels (...

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Veröffentlicht in:Journal of communications technology & electronics 2007-10, Vol.52 (10), p.1165-1170
Hauptverfasser: Zhigal’skii, G. P., Kostryukov, S. A., Litvinov, V. G., Rodin, M. S., Kholomina, T. A.
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container_issue 10
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container_title Journal of communications technology & electronics
container_volume 52
creator Zhigal’skii, G. P.
Kostryukov, S. A.
Litvinov, V. G.
Rodin, M. S.
Kholomina, T. A.
description The parameters of deep centers in the barrier structures based on intrinsic gallium arsenide that are used in the detectors of charged particles and X-ray radiation are studied via the methods of the deep-level transient spectroscopy (DLTS) and the low-frequency-noise spectroscopy. Two deep levels (DLs) with different layer concentrations are revealed in the samples under study. It is demonstrated that a high-temperature DL with relatively high ionization energy determines the spectral power density of the excess noise and reverse currents of an Al/i-GaAs detector. In addition, it is demonstrated that the DL ionization energies determined with the use of the DLTS and the low-frequency-noise spectroscopy methods are identical.[PUBLICATION ABSTRACT]
doi_str_mv 10.1134/S1064226907100142
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subjects Aluminum
Charged particles
Density
Detectors
Gallium arsenide
Ionization
Noise
Radiation
Spectra
Spectroscopy
Spectrum analysis
X-rays
title Analysis of the parameters of deep centers in the Al/i-GaAs detectors of charged particles and X-ray radiation
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