Analysis of the parameters of deep centers in the Al/i-GaAs detectors of charged particles and X-ray radiation
The parameters of deep centers in the barrier structures based on intrinsic gallium arsenide that are used in the detectors of charged particles and X-ray radiation are studied via the methods of the deep-level transient spectroscopy (DLTS) and the low-frequency-noise spectroscopy. Two deep levels (...
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Veröffentlicht in: | Journal of communications technology & electronics 2007-10, Vol.52 (10), p.1165-1170 |
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creator | Zhigal’skii, G. P. Kostryukov, S. A. Litvinov, V. G. Rodin, M. S. Kholomina, T. A. |
description | The parameters of deep centers in the barrier structures based on intrinsic gallium arsenide that are used in the detectors of charged particles and X-ray radiation are studied via the methods of the deep-level transient spectroscopy (DLTS) and the low-frequency-noise spectroscopy. Two deep levels (DLs) with different layer concentrations are revealed in the samples under study. It is demonstrated that a high-temperature DL with relatively high ionization energy determines the spectral power density of the excess noise and reverse currents of an Al/i-GaAs detector. In addition, it is demonstrated that the DL ionization energies determined with the use of the DLTS and the low-frequency-noise spectroscopy methods are identical.[PUBLICATION ABSTRACT] |
doi_str_mv | 10.1134/S1064226907100142 |
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P. ; Kostryukov, S. A. ; Litvinov, V. G. ; Rodin, M. S. ; Kholomina, T. A.</creator><creatorcontrib>Zhigal’skii, G. P. ; Kostryukov, S. A. ; Litvinov, V. G. ; Rodin, M. S. ; Kholomina, T. A.</creatorcontrib><description>The parameters of deep centers in the barrier structures based on intrinsic gallium arsenide that are used in the detectors of charged particles and X-ray radiation are studied via the methods of the deep-level transient spectroscopy (DLTS) and the low-frequency-noise spectroscopy. Two deep levels (DLs) with different layer concentrations are revealed in the samples under study. It is demonstrated that a high-temperature DL with relatively high ionization energy determines the spectral power density of the excess noise and reverse currents of an Al/i-GaAs detector. In addition, it is demonstrated that the DL ionization energies determined with the use of the DLTS and the low-frequency-noise spectroscopy methods are identical.[PUBLICATION ABSTRACT]</description><identifier>ISSN: 1064-2269</identifier><identifier>EISSN: 1555-6557</identifier><identifier>DOI: 10.1134/S1064226907100142</identifier><language>eng</language><publisher>Silver Spring: Springer Nature B.V</publisher><subject>Aluminum ; Charged particles ; Density ; Detectors ; Gallium arsenide ; Ionization ; Noise ; Radiation ; Spectra ; Spectroscopy ; Spectrum analysis ; X-rays</subject><ispartof>Journal of communications technology & electronics, 2007-10, Vol.52 (10), p.1165-1170</ispartof><rights>Nauka/Interperiodica 2007</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c304t-2c18d31a09218440e89cb373d1b07fc35f724cb00cadf4b3b1a511a76243423</citedby><cites>FETCH-LOGICAL-c304t-2c18d31a09218440e89cb373d1b07fc35f724cb00cadf4b3b1a511a76243423</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Zhigal’skii, G. 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P.</au><au>Kostryukov, S. A.</au><au>Litvinov, V. G.</au><au>Rodin, M. S.</au><au>Kholomina, T. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Analysis of the parameters of deep centers in the Al/i-GaAs detectors of charged particles and X-ray radiation</atitle><jtitle>Journal of communications technology & electronics</jtitle><date>2007-10-01</date><risdate>2007</risdate><volume>52</volume><issue>10</issue><spage>1165</spage><epage>1170</epage><pages>1165-1170</pages><issn>1064-2269</issn><eissn>1555-6557</eissn><abstract>The parameters of deep centers in the barrier structures based on intrinsic gallium arsenide that are used in the detectors of charged particles and X-ray radiation are studied via the methods of the deep-level transient spectroscopy (DLTS) and the low-frequency-noise spectroscopy. Two deep levels (DLs) with different layer concentrations are revealed in the samples under study. It is demonstrated that a high-temperature DL with relatively high ionization energy determines the spectral power density of the excess noise and reverse currents of an Al/i-GaAs detector. In addition, it is demonstrated that the DL ionization energies determined with the use of the DLTS and the low-frequency-noise spectroscopy methods are identical.[PUBLICATION ABSTRACT]</abstract><cop>Silver Spring</cop><pub>Springer Nature B.V</pub><doi>10.1134/S1064226907100142</doi><tpages>6</tpages></addata></record> |
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subjects | Aluminum Charged particles Density Detectors Gallium arsenide Ionization Noise Radiation Spectra Spectroscopy Spectrum analysis X-rays |
title | Analysis of the parameters of deep centers in the Al/i-GaAs detectors of charged particles and X-ray radiation |
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