Electrically Driven Quantum Dot/Wire/Well Hybrid Light-Emitting Diodes

Electrically Driven Quantum Dot/Wire/Well Hybrid Light-Emitting Diodes

Electrically driven quantum dot, wire, and well hybrid light‐emitting diodes are demonstrated by using nanometer‐sized pyramid structures of GaN. InGaN quantum dots, wires, and wells are formed at the tops, edges, and sidewalls of pyramids, respectively. The hybrid light‐emitting diodes containing l...

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Veröffentlicht in:Advanced materials (Weinheim) 2011-12, Vol.23 (45), p.5364-5369
Hauptverfasser: Ko, Young-Ho, Kim, Je-Hyung, Jin, Li-Hua, Ko, Suk-Min, Kwon, Bong-Joon, Kim, Joosung, Kim, Taek, Cho, Yong-Hoon
Format: Artikel
Sprache:eng
Schlagworte:
Electric Conductivity
Electrodes
GaN
Light
light-emitting diodes
pyramid structures
Quantum Dots
quantum wells
quantum wires
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Zusammenfassung:Electrically driven quantum dot, wire, and well hybrid light‐emitting diodes are demonstrated by using nanometer‐sized pyramid structures of GaN. InGaN quantum dots, wires, and wells are formed at the tops, edges, and sidewalls of pyramids, respectively. The hybrid light‐emitting diodes containing low‐dimensional quantum structures are good candidates for broad‐band highly efficient visible lighting sources.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201102534