Nanosphere natural lithography surface texturing as anti-reflective layer on SiC photodiodes
Natural lithography with 100-nm-diameter SiO(2) spheres followed by inductively coupled plasma etching was used to texture the surface of 4H-SiC for a wide-spectrum large-acceptance-angle anti-reflective layer. The surface showed low normal-incidence reflectance of < 5% over a wide spectrum from...
Gespeichert in:
| Veröffentlicht in: | Optics express 2011-11, Vol.19 (24), p.23664-23670 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 23670 |
|---|---|
| container_issue | 24 |
| container_start_page | 23664 |
| container_title | Optics express |
| container_volume | 19 |
| creator | Zhou, Qiugui McIntosh, Dion C Chen, Yaojia Sun, Wenlu Li, Zhi Campbell, Joe C |
| description | Natural lithography with 100-nm-diameter SiO(2) spheres followed by inductively coupled plasma etching was used to texture the surface of 4H-SiC for a wide-spectrum large-acceptance-angle anti-reflective layer. The surface showed low normal-incidence reflectance of < 5% over a wide spectrum from 250 nm to 550 nm. Photodiodes fabricated from the surface-textured SiC showed broader spectral and angular responsivity than SiC photodiodes with SiO(2) antireflective coating. The textured SiC photodiodes showed peak responsivity of 116 mA/W, large angle of acceptance angle (< 2% decrease in responsivity at 50° incident angle) and low dark current at 10V. |
| doi_str_mv | 10.1364/OE.19.023664 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_905964824</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>905964824</sourcerecordid><originalsourceid>FETCH-LOGICAL-c328t-f86c9e0c696a291c0f48e6d92844af459365d9997316fe07325eaf095357571f3</originalsourceid><addsrcrecordid>eNpNkEtLAzEUhYMotlZ3riU7N07NazKTpZT6gGIX6k4IMXPTjkwnY5IR--8daRVX98D5OHA_hM4pmVIuxfVyPqVqShiXUhygMSVKZIKUxeG_PEInMb4TQkWhimM0YmyouGJj9PpoWh-7NQTArUl9MA1u6rT2q2C69RbHPjhjASf4Gsq6XWETsWlTnQVwDdhUfwJuzBYC9i1-qme4W_vkq9pXEE_RkTNNhLP9naCX2_nz7D5bLO8eZjeLzHJWpsyV0iogVippmKKWOFGCrBQrhTBO5IrLvFJKFZxKB6TgLAfjiMp5XuQFdXyCLne7XfAfPcSkN3W00DSmBd9HrUiupCiZGMirHWmDj3F4QXeh3piw1ZToH516OddU6Z3OAb_YD_dvG6j-4F9__Bu26HAl</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>905964824</pqid></control><display><type>article</type><title>Nanosphere natural lithography surface texturing as anti-reflective layer on SiC photodiodes</title><source>MEDLINE</source><source>DOAJ Directory of Open Access Journals</source><source>EZB-FREE-00999 freely available EZB journals</source><source>Alma/SFX Local Collection</source><creator>Zhou, Qiugui ; McIntosh, Dion C ; Chen, Yaojia ; Sun, Wenlu ; Li, Zhi ; Campbell, Joe C</creator><creatorcontrib>Zhou, Qiugui ; McIntosh, Dion C ; Chen, Yaojia ; Sun, Wenlu ; Li, Zhi ; Campbell, Joe C</creatorcontrib><description>Natural lithography with 100-nm-diameter SiO(2) spheres followed by inductively coupled plasma etching was used to texture the surface of 4H-SiC for a wide-spectrum large-acceptance-angle anti-reflective layer. The surface showed low normal-incidence reflectance of < 5% over a wide spectrum from 250 nm to 550 nm. Photodiodes fabricated from the surface-textured SiC showed broader spectral and angular responsivity than SiC photodiodes with SiO(2) antireflective coating. The textured SiC photodiodes showed peak responsivity of 116 mA/W, large angle of acceptance angle (< 2% decrease in responsivity at 50° incident angle) and low dark current at 10V.</description><identifier>ISSN: 1094-4087</identifier><identifier>EISSN: 1094-4087</identifier><identifier>DOI: 10.1364/OE.19.023664</identifier><identifier>PMID: 22109392</identifier><language>eng</language><publisher>United States</publisher><subject>Carbon Compounds, Inorganic - chemistry ; Equipment Design ; Equipment Failure Analysis ; Light ; Nanospheres - chemistry ; Nanotechnology - instrumentation ; Photography - methods ; Photometry - instrumentation ; Scattering, Radiation ; Semiconductors ; Silicon Compounds - chemistry</subject><ispartof>Optics express, 2011-11, Vol.19 (24), p.23664-23670</ispartof><rights>2011 Optical Society of America</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c328t-f86c9e0c696a291c0f48e6d92844af459365d9997316fe07325eaf095357571f3</citedby><cites>FETCH-LOGICAL-c328t-f86c9e0c696a291c0f48e6d92844af459365d9997316fe07325eaf095357571f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,864,27922,27923</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/22109392$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Zhou, Qiugui</creatorcontrib><creatorcontrib>McIntosh, Dion C</creatorcontrib><creatorcontrib>Chen, Yaojia</creatorcontrib><creatorcontrib>Sun, Wenlu</creatorcontrib><creatorcontrib>Li, Zhi</creatorcontrib><creatorcontrib>Campbell, Joe C</creatorcontrib><title>Nanosphere natural lithography surface texturing as anti-reflective layer on SiC photodiodes</title><title>Optics express</title><addtitle>Opt Express</addtitle><description>Natural lithography with 100-nm-diameter SiO(2) spheres followed by inductively coupled plasma etching was used to texture the surface of 4H-SiC for a wide-spectrum large-acceptance-angle anti-reflective layer. The surface showed low normal-incidence reflectance of < 5% over a wide spectrum from 250 nm to 550 nm. Photodiodes fabricated from the surface-textured SiC showed broader spectral and angular responsivity than SiC photodiodes with SiO(2) antireflective coating. The textured SiC photodiodes showed peak responsivity of 116 mA/W, large angle of acceptance angle (< 2% decrease in responsivity at 50° incident angle) and low dark current at 10V.</description><subject>Carbon Compounds, Inorganic - chemistry</subject><subject>Equipment Design</subject><subject>Equipment Failure Analysis</subject><subject>Light</subject><subject>Nanospheres - chemistry</subject><subject>Nanotechnology - instrumentation</subject><subject>Photography - methods</subject><subject>Photometry - instrumentation</subject><subject>Scattering, Radiation</subject><subject>Semiconductors</subject><subject>Silicon Compounds - chemistry</subject><issn>1094-4087</issn><issn>1094-4087</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>EIF</sourceid><recordid>eNpNkEtLAzEUhYMotlZ3riU7N07NazKTpZT6gGIX6k4IMXPTjkwnY5IR--8daRVX98D5OHA_hM4pmVIuxfVyPqVqShiXUhygMSVKZIKUxeG_PEInMb4TQkWhimM0YmyouGJj9PpoWh-7NQTArUl9MA1u6rT2q2C69RbHPjhjASf4Gsq6XWETsWlTnQVwDdhUfwJuzBYC9i1-qme4W_vkq9pXEE_RkTNNhLP9naCX2_nz7D5bLO8eZjeLzHJWpsyV0iogVippmKKWOFGCrBQrhTBO5IrLvFJKFZxKB6TgLAfjiMp5XuQFdXyCLne7XfAfPcSkN3W00DSmBd9HrUiupCiZGMirHWmDj3F4QXeh3piw1ZToH516OddU6Z3OAb_YD_dvG6j-4F9__Bu26HAl</recordid><startdate>20111121</startdate><enddate>20111121</enddate><creator>Zhou, Qiugui</creator><creator>McIntosh, Dion C</creator><creator>Chen, Yaojia</creator><creator>Sun, Wenlu</creator><creator>Li, Zhi</creator><creator>Campbell, Joe C</creator><scope>CGR</scope><scope>CUY</scope><scope>CVF</scope><scope>ECM</scope><scope>EIF</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20111121</creationdate><title>Nanosphere natural lithography surface texturing as anti-reflective layer on SiC photodiodes</title><author>Zhou, Qiugui ; McIntosh, Dion C ; Chen, Yaojia ; Sun, Wenlu ; Li, Zhi ; Campbell, Joe C</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c328t-f86c9e0c696a291c0f48e6d92844af459365d9997316fe07325eaf095357571f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Carbon Compounds, Inorganic - chemistry</topic><topic>Equipment Design</topic><topic>Equipment Failure Analysis</topic><topic>Light</topic><topic>Nanospheres - chemistry</topic><topic>Nanotechnology - instrumentation</topic><topic>Photography - methods</topic><topic>Photometry - instrumentation</topic><topic>Scattering, Radiation</topic><topic>Semiconductors</topic><topic>Silicon Compounds - chemistry</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhou, Qiugui</creatorcontrib><creatorcontrib>McIntosh, Dion C</creatorcontrib><creatorcontrib>Chen, Yaojia</creatorcontrib><creatorcontrib>Sun, Wenlu</creatorcontrib><creatorcontrib>Li, Zhi</creatorcontrib><creatorcontrib>Campbell, Joe C</creatorcontrib><collection>Medline</collection><collection>MEDLINE</collection><collection>MEDLINE (Ovid)</collection><collection>MEDLINE</collection><collection>MEDLINE</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Optics express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhou, Qiugui</au><au>McIntosh, Dion C</au><au>Chen, Yaojia</au><au>Sun, Wenlu</au><au>Li, Zhi</au><au>Campbell, Joe C</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Nanosphere natural lithography surface texturing as anti-reflective layer on SiC photodiodes</atitle><jtitle>Optics express</jtitle><addtitle>Opt Express</addtitle><date>2011-11-21</date><risdate>2011</risdate><volume>19</volume><issue>24</issue><spage>23664</spage><epage>23670</epage><pages>23664-23670</pages><issn>1094-4087</issn><eissn>1094-4087</eissn><abstract>Natural lithography with 100-nm-diameter SiO(2) spheres followed by inductively coupled plasma etching was used to texture the surface of 4H-SiC for a wide-spectrum large-acceptance-angle anti-reflective layer. The surface showed low normal-incidence reflectance of < 5% over a wide spectrum from 250 nm to 550 nm. Photodiodes fabricated from the surface-textured SiC showed broader spectral and angular responsivity than SiC photodiodes with SiO(2) antireflective coating. The textured SiC photodiodes showed peak responsivity of 116 mA/W, large angle of acceptance angle (< 2% decrease in responsivity at 50° incident angle) and low dark current at 10V.</abstract><cop>United States</cop><pmid>22109392</pmid><doi>10.1364/OE.19.023664</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1094-4087 |
| ispartof | Optics express, 2011-11, Vol.19 (24), p.23664-23670 |
| issn | 1094-4087 1094-4087 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_905964824 |
| source | MEDLINE; DOAJ Directory of Open Access Journals; EZB-FREE-00999 freely available EZB journals; Alma/SFX Local Collection |
| subjects | Carbon Compounds, Inorganic - chemistry Equipment Design Equipment Failure Analysis Light Nanospheres - chemistry Nanotechnology - instrumentation Photography - methods Photometry - instrumentation Scattering, Radiation Semiconductors Silicon Compounds - chemistry |
| title | Nanosphere natural lithography surface texturing as anti-reflective layer on SiC photodiodes |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T09%3A11%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Nanosphere%20natural%20lithography%20surface%20texturing%20as%20anti-reflective%20layer%20on%20SiC%20photodiodes&rft.jtitle=Optics%20express&rft.au=Zhou,%20Qiugui&rft.date=2011-11-21&rft.volume=19&rft.issue=24&rft.spage=23664&rft.epage=23670&rft.pages=23664-23670&rft.issn=1094-4087&rft.eissn=1094-4087&rft_id=info:doi/10.1364/OE.19.023664&rft_dat=%3Cproquest_cross%3E905964824%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=905964824&rft_id=info:pmid/22109392&rfr_iscdi=true |