Quantum Dot Behavior in Bilayer Graphene Nanoribbons
Bilayer graphene has recently earned great attention for its unique electronic properties and commendable use in electronic applications. Here, we report the observation of quantum dot (QD) behaviors in bilayer graphene nanoribbons (BL-GNRs). The periodic Coulomb oscillations indicate the formation...
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| Veröffentlicht in: | ACS nano 2011-11, Vol.5 (11), p.8769-8773 |
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| creator | Wang, Minsheng Song, Emil B Lee, Sejoon Tang, Jianshi Lang, Murong Zeng, Caifu Xu, Guangyu Zhou, Yi Wang, Kang L |
| description | Bilayer graphene has recently earned great attention for its unique electronic properties and commendable use in electronic applications. Here, we report the observation of quantum dot (QD) behaviors in bilayer graphene nanoribbons (BL-GNRs). The periodic Coulomb oscillations indicate the formation of a single quantum dot within the BL-GNR because of the broad distribution function of the carrier concentration fluctuation at the charge neutrality point. The size of the QD changes as we modulate the relative position between the Fermi level and surface potential. Furthermore, the potential barriers forming the QD remain stable at elevated temperatures and external bias. In combination with the observation of transport gaps, our results suggest that the disordered surface potential creates QDs along the ribbon and governs the electronic transport properties in BL-GNRs. |
| doi_str_mv | 10.1021/nn2027566 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_905872513</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>905872513</sourcerecordid><originalsourceid>FETCH-LOGICAL-a347t-c19944dd6ac4b8d43ed456766310606e5f47c5fc2527e150bb4731cc929f5d153</originalsourceid><addsrcrecordid>eNp90M1Kw0AUhuFBFFurC29AshF1ET3znyxt1SoURVBwFyaTCU1JZupMIvTujaR2Ja7OWTx8ixehUwzXGAi-sZYAkVyIPTTGKRUxJOJjf_dzPEJHIawAuEykOEQjQgBLCskYsddO2bZrojvXRlOzVF-V81Flo2lVq43x0dyr9dJYEz0r63yV586GY3RQqjqYk-2doPeH-7fZY7x4mT_Nbhexoky2scZpylhRCKVZnhSMmoJxIYWgGAQIw0smNS814UQazCHPmaRY65SkJS8wpxN0MeyuvfvsTGizpgra1LWyxnUhS4EnknBMe3n5r8RSEOBcQtrTq4Fq70LwpszWvmqU32QYsp-c2S5nb8-2s13emGInf_v14HwASods5Tpv-x5_DH0DSLV4xA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1762055709</pqid></control><display><type>article</type><title>Quantum Dot Behavior in Bilayer Graphene Nanoribbons</title><source>ACS Publications</source><creator>Wang, Minsheng ; Song, Emil B ; Lee, Sejoon ; Tang, Jianshi ; Lang, Murong ; Zeng, Caifu ; Xu, Guangyu ; Zhou, Yi ; Wang, Kang L</creator><creatorcontrib>Wang, Minsheng ; Song, Emil B ; Lee, Sejoon ; Tang, Jianshi ; Lang, Murong ; Zeng, Caifu ; Xu, Guangyu ; Zhou, Yi ; Wang, Kang L</creatorcontrib><description>Bilayer graphene has recently earned great attention for its unique electronic properties and commendable use in electronic applications. Here, we report the observation of quantum dot (QD) behaviors in bilayer graphene nanoribbons (BL-GNRs). The periodic Coulomb oscillations indicate the formation of a single quantum dot within the BL-GNR because of the broad distribution function of the carrier concentration fluctuation at the charge neutrality point. The size of the QD changes as we modulate the relative position between the Fermi level and surface potential. Furthermore, the potential barriers forming the QD remain stable at elevated temperatures and external bias. In combination with the observation of transport gaps, our results suggest that the disordered surface potential creates QDs along the ribbon and governs the electronic transport properties in BL-GNRs.</description><identifier>ISSN: 1936-0851</identifier><identifier>EISSN: 1936-086X</identifier><identifier>DOI: 10.1021/nn2027566</identifier><identifier>PMID: 22017308</identifier><language>eng</language><publisher>United States: American Chemical Society</publisher><subject>Carrier density ; Charge ; Electronics ; Fermi level ; Graphene ; Nanostructure ; Oscillations ; Quantum dots ; Ribbons</subject><ispartof>ACS nano, 2011-11, Vol.5 (11), p.8769-8773</ispartof><rights>Copyright © 2011 American Chemical Society</rights><rights>2011 American Chemical Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a347t-c19944dd6ac4b8d43ed456766310606e5f47c5fc2527e150bb4731cc929f5d153</citedby><cites>FETCH-LOGICAL-a347t-c19944dd6ac4b8d43ed456766310606e5f47c5fc2527e150bb4731cc929f5d153</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/nn2027566$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/nn2027566$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,780,784,2765,27076,27924,27925,56738,56788</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/22017308$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Wang, Minsheng</creatorcontrib><creatorcontrib>Song, Emil B</creatorcontrib><creatorcontrib>Lee, Sejoon</creatorcontrib><creatorcontrib>Tang, Jianshi</creatorcontrib><creatorcontrib>Lang, Murong</creatorcontrib><creatorcontrib>Zeng, Caifu</creatorcontrib><creatorcontrib>Xu, Guangyu</creatorcontrib><creatorcontrib>Zhou, Yi</creatorcontrib><creatorcontrib>Wang, Kang L</creatorcontrib><title>Quantum Dot Behavior in Bilayer Graphene Nanoribbons</title><title>ACS nano</title><addtitle>ACS Nano</addtitle><description>Bilayer graphene has recently earned great attention for its unique electronic properties and commendable use in electronic applications. Here, we report the observation of quantum dot (QD) behaviors in bilayer graphene nanoribbons (BL-GNRs). The periodic Coulomb oscillations indicate the formation of a single quantum dot within the BL-GNR because of the broad distribution function of the carrier concentration fluctuation at the charge neutrality point. The size of the QD changes as we modulate the relative position between the Fermi level and surface potential. Furthermore, the potential barriers forming the QD remain stable at elevated temperatures and external bias. In combination with the observation of transport gaps, our results suggest that the disordered surface potential creates QDs along the ribbon and governs the electronic transport properties in BL-GNRs.</description><subject>Carrier density</subject><subject>Charge</subject><subject>Electronics</subject><subject>Fermi level</subject><subject>Graphene</subject><subject>Nanostructure</subject><subject>Oscillations</subject><subject>Quantum dots</subject><subject>Ribbons</subject><issn>1936-0851</issn><issn>1936-086X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp90M1Kw0AUhuFBFFurC29AshF1ET3znyxt1SoURVBwFyaTCU1JZupMIvTujaR2Ja7OWTx8ixehUwzXGAi-sZYAkVyIPTTGKRUxJOJjf_dzPEJHIawAuEykOEQjQgBLCskYsddO2bZrojvXRlOzVF-V81Flo2lVq43x0dyr9dJYEz0r63yV586GY3RQqjqYk-2doPeH-7fZY7x4mT_Nbhexoky2scZpylhRCKVZnhSMmoJxIYWgGAQIw0smNS814UQazCHPmaRY65SkJS8wpxN0MeyuvfvsTGizpgra1LWyxnUhS4EnknBMe3n5r8RSEOBcQtrTq4Fq70LwpszWvmqU32QYsp-c2S5nb8-2s13emGInf_v14HwASods5Tpv-x5_DH0DSLV4xA</recordid><startdate>20111122</startdate><enddate>20111122</enddate><creator>Wang, Minsheng</creator><creator>Song, Emil B</creator><creator>Lee, Sejoon</creator><creator>Tang, Jianshi</creator><creator>Lang, Murong</creator><creator>Zeng, Caifu</creator><creator>Xu, Guangyu</creator><creator>Zhou, Yi</creator><creator>Wang, Kang L</creator><general>American Chemical Society</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>7X8</scope></search><sort><creationdate>20111122</creationdate><title>Quantum Dot Behavior in Bilayer Graphene Nanoribbons</title><author>Wang, Minsheng ; Song, Emil B ; Lee, Sejoon ; Tang, Jianshi ; Lang, Murong ; Zeng, Caifu ; Xu, Guangyu ; Zhou, Yi ; Wang, Kang L</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a347t-c19944dd6ac4b8d43ed456766310606e5f47c5fc2527e150bb4731cc929f5d153</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Carrier density</topic><topic>Charge</topic><topic>Electronics</topic><topic>Fermi level</topic><topic>Graphene</topic><topic>Nanostructure</topic><topic>Oscillations</topic><topic>Quantum dots</topic><topic>Ribbons</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Minsheng</creatorcontrib><creatorcontrib>Song, Emil B</creatorcontrib><creatorcontrib>Lee, Sejoon</creatorcontrib><creatorcontrib>Tang, Jianshi</creatorcontrib><creatorcontrib>Lang, Murong</creatorcontrib><creatorcontrib>Zeng, Caifu</creatorcontrib><creatorcontrib>Xu, Guangyu</creatorcontrib><creatorcontrib>Zhou, Yi</creatorcontrib><creatorcontrib>Wang, Kang L</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>ACS nano</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Minsheng</au><au>Song, Emil B</au><au>Lee, Sejoon</au><au>Tang, Jianshi</au><au>Lang, Murong</au><au>Zeng, Caifu</au><au>Xu, Guangyu</au><au>Zhou, Yi</au><au>Wang, Kang L</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Quantum Dot Behavior in Bilayer Graphene Nanoribbons</atitle><jtitle>ACS nano</jtitle><addtitle>ACS Nano</addtitle><date>2011-11-22</date><risdate>2011</risdate><volume>5</volume><issue>11</issue><spage>8769</spage><epage>8773</epage><pages>8769-8773</pages><issn>1936-0851</issn><eissn>1936-086X</eissn><abstract>Bilayer graphene has recently earned great attention for its unique electronic properties and commendable use in electronic applications. Here, we report the observation of quantum dot (QD) behaviors in bilayer graphene nanoribbons (BL-GNRs). The periodic Coulomb oscillations indicate the formation of a single quantum dot within the BL-GNR because of the broad distribution function of the carrier concentration fluctuation at the charge neutrality point. The size of the QD changes as we modulate the relative position between the Fermi level and surface potential. Furthermore, the potential barriers forming the QD remain stable at elevated temperatures and external bias. In combination with the observation of transport gaps, our results suggest that the disordered surface potential creates QDs along the ribbon and governs the electronic transport properties in BL-GNRs.</abstract><cop>United States</cop><pub>American Chemical Society</pub><pmid>22017308</pmid><doi>10.1021/nn2027566</doi><tpages>5</tpages></addata></record> |
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| subjects | Carrier density Charge Electronics Fermi level Graphene Nanostructure Oscillations Quantum dots Ribbons |
| title | Quantum Dot Behavior in Bilayer Graphene Nanoribbons |
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