@@iEx situ@ n and p doping of vertical epitaxial short silicon nanowires by ion implantation

Vertical epitaxial short (200-300 nm long) silicon nanowires (Si NWs) grown by molecular beam epitaxy on Si(111) substrates were separately doped p- and n-type @@iex situ@ by implanting with B, P and As ions respectively at room temperature. Multi-energy implantations were used for each case, with f...

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Veröffentlicht in:	Nanotechnology 2009-04, Vol.20 (16)
Hauptverfasser:	Kanungo, P D, Koegler, R, Nguyen-Duc, K, Zakharov, N, Werner, P, Goesele, U
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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