Thin film silicon n–i–p solar cells deposited by VHF PECVD at 100 °C substrate temperature

The applicability of the very high frequency (VHF) plasma-enhanced chemical vapor deposition (PECVD) technique to the fabrication of solar cells in an n–i–p configuration at 100 °C substrate temperature is being investigated. Amorphous and microcrystalline silicon cells are made with the absorber la...

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Veröffentlicht in:Solar energy materials and solar cells 2009-06, Vol.93 (6), p.680-683
Hauptverfasser: Brinza, M., Rath, J.K., Schropp, R.E.I.
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Sprache:eng
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