Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence
A compact circuit simulator model is used to describe the performance of a 2-kV, 5-A 4-H silicon carbide (SiC) power DiMOSFET and to perform a detailed comparison with the performance of a widely used 400-V, 5-A Si power MOSFET. The model's channel current expressions are unique in that they in...
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| Veröffentlicht in: | IEEE transactions on power electronics 2007-03, Vol.22 (2), p.353-363 |
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| creator | McNutt, T.R. Hefner, A.R. Mantooth, H.A. Berning, D. Sei-Hyung Ryu |
| description | A compact circuit simulator model is used to describe the performance of a 2-kV, 5-A 4-H silicon carbide (SiC) power DiMOSFET and to perform a detailed comparison with the performance of a widely used 400-V, 5-A Si power MOSFET. The model's channel current expressions are unique in that they include the channel regions at the corners of the square or hexagonal cells that turn on at lower gate voltages and the enhanced linear region transconductance due to diffusion in the nonuniformly doped channel. It is shown that the model accurately describes the static and dynamic performance of both the Si and SiC devices and that the diffusion-enhanced channel conductance is essential to describe the SiC DiMOSFET on-state characteristics. The detailed device comparisons reveal that both the on-state performance and switching performance at 25degC are similar between the 400-V Si and 2-kV SiC MOSFETs, with the exception that the SiC device requires twice the gate drive voltage. The main difference between the devices is that the SiC has a five times higher voltage rating without an increase in the specific on-resistance. At higher temperatures (above 100degC), the Si device has a severe reduction in conduction capability, whereas the SiC on-resistance is only minimally affected |
| doi_str_mv | 10.1109/TPEL.2006.889890 |
| format | Article |
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The model's channel current expressions are unique in that they include the channel regions at the corners of the square or hexagonal cells that turn on at lower gate voltages and the enhanced linear region transconductance due to diffusion in the nonuniformly doped channel. It is shown that the model accurately describes the static and dynamic performance of both the Si and SiC devices and that the diffusion-enhanced channel conductance is essential to describe the SiC DiMOSFET on-state characteristics. The detailed device comparisons reveal that both the on-state performance and switching performance at 25degC are similar between the 400-V Si and 2-kV SiC MOSFETs, with the exception that the SiC device requires twice the gate drive voltage. The main difference between the devices is that the SiC has a five times higher voltage rating without an increase in the specific on-resistance. At higher temperatures (above 100degC), the Si device has a severe reduction in conduction capability, whereas the SiC on-resistance is only minimally affected</description><identifier>ISSN: 0885-8993</identifier><identifier>EISSN: 1941-0107</identifier><identifier>DOI: 10.1109/TPEL.2006.889890</identifier><identifier>CODEN: ITPEE8</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Capacitance ; Channels ; Circuits ; Devices ; DiMOSFET ; Electric currents ; Electric potential ; Electric resistance ; Electric, optical and optoelectronic circuits ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Exact sciences and technology ; Immune system ; Mathematical models ; MOSFET circuits ; MOSFETs ; Other multijunction devices. Power transistors. Thyristors ; Parameter extraction ; Power MOSFET ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon ; Silicon carbide ; silicon carbide (SiC) ; Temperature ; Theoretical study. Circuits analysis and design ; Threshold voltage ; Transconductance ; Transistors ; Voltage</subject><ispartof>IEEE transactions on power electronics, 2007-03, Vol.22 (2), p.353-363</ispartof><rights>2007 INIST-CNRS</rights><rights>Copyright Institute of Electrical and Electronics Engineers, Inc. (IEEE) Mar 2007</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c481t-f7914592513e9e401b79264076f238331c2e7323fe3f3d936f37a172a801de923</citedby><cites>FETCH-LOGICAL-c481t-f7914592513e9e401b79264076f238331c2e7323fe3f3d936f37a172a801de923</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4118319$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4118319$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18593866$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>McNutt, T.R.</creatorcontrib><creatorcontrib>Hefner, A.R.</creatorcontrib><creatorcontrib>Mantooth, H.A.</creatorcontrib><creatorcontrib>Berning, D.</creatorcontrib><creatorcontrib>Sei-Hyung Ryu</creatorcontrib><title>Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence</title><title>IEEE transactions on power electronics</title><addtitle>TPEL</addtitle><description>A compact circuit simulator model is used to describe the performance of a 2-kV, 5-A 4-H silicon carbide (SiC) power DiMOSFET and to perform a detailed comparison with the performance of a widely used 400-V, 5-A Si power MOSFET. The model's channel current expressions are unique in that they include the channel regions at the corners of the square or hexagonal cells that turn on at lower gate voltages and the enhanced linear region transconductance due to diffusion in the nonuniformly doped channel. It is shown that the model accurately describes the static and dynamic performance of both the Si and SiC devices and that the diffusion-enhanced channel conductance is essential to describe the SiC DiMOSFET on-state characteristics. The detailed device comparisons reveal that both the on-state performance and switching performance at 25degC are similar between the 400-V Si and 2-kV SiC MOSFETs, with the exception that the SiC device requires twice the gate drive voltage. The main difference between the devices is that the SiC has a five times higher voltage rating without an increase in the specific on-resistance. At higher temperatures (above 100degC), the Si device has a severe reduction in conduction capability, whereas the SiC on-resistance is only minimally affected</description><subject>Applied sciences</subject><subject>Capacitance</subject><subject>Channels</subject><subject>Circuits</subject><subject>Devices</subject><subject>DiMOSFET</subject><subject>Electric currents</subject><subject>Electric potential</subject><subject>Electric resistance</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Immune system</subject><subject>Mathematical models</subject><subject>MOSFET circuits</subject><subject>MOSFETs</subject><subject>Other multijunction devices. Power transistors. Thyristors</subject><subject>Parameter extraction</subject><subject>Power MOSFET</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon</subject><subject>Silicon carbide</subject><subject>silicon carbide (SiC)</subject><subject>Temperature</subject><subject>Theoretical study. Circuits analysis and design</subject><subject>Threshold voltage</subject><subject>Transconductance</subject><subject>Transistors</subject><subject>Voltage</subject><issn>0885-8993</issn><issn>1941-0107</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkUFr20AQhZfSQl0390IvotDmJGdmZy3tHIvrpgGHGJyel81qBAqylO7KpP33XePQQg_NaQ7zvfdmeEq9Q1ggAl_cbtebhQaoFtayZXihZsgGS0CoX6oZWLssLTO9Vm9SugdAswScqS-7ru_COBQrH--6Rort-CixuL7ZfV3fFtdjI33hh6bY-uj3MuXV-ucUfZi6rNnJj4MMQd6qV63vk5w9zbn6ntWrb-Xm5vJq9XlTBmNxKtuacyrrJZKwGMC7mnVloK5aTZYIg5aaNLVCLTVMVUu1x1p7C9gIa5qr85PvQxxzcprcvktB-t4PMh6SY6DKoNb4LGktVBVxxZn89F-SjKkR8Ah--Ae8Hw9xyP86nc0sZyZDcIJCHFOK0rqH2O19_OUQ3LEnd-zJHXtyp56y5OOTr0_B9230Q-jSX51dMtl87Fy9P3GdiPxZG0RLOfk3bR6XNQ</recordid><startdate>20070301</startdate><enddate>20070301</enddate><creator>McNutt, T.R.</creator><creator>Hefner, A.R.</creator><creator>Mantooth, H.A.</creator><creator>Berning, D.</creator><creator>Sei-Hyung Ryu</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Immune system</topic><topic>Mathematical models</topic><topic>MOSFET circuits</topic><topic>MOSFETs</topic><topic>Other multijunction devices. Power transistors. Thyristors</topic><topic>Parameter extraction</topic><topic>Power MOSFET</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon</topic><topic>Silicon carbide</topic><topic>silicon carbide (SiC)</topic><topic>Temperature</topic><topic>Theoretical study. 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The model's channel current expressions are unique in that they include the channel regions at the corners of the square or hexagonal cells that turn on at lower gate voltages and the enhanced linear region transconductance due to diffusion in the nonuniformly doped channel. It is shown that the model accurately describes the static and dynamic performance of both the Si and SiC devices and that the diffusion-enhanced channel conductance is essential to describe the SiC DiMOSFET on-state characteristics. The detailed device comparisons reveal that both the on-state performance and switching performance at 25degC are similar between the 400-V Si and 2-kV SiC MOSFETs, with the exception that the SiC device requires twice the gate drive voltage. The main difference between the devices is that the SiC has a five times higher voltage rating without an increase in the specific on-resistance. At higher temperatures (above 100degC), the Si device has a severe reduction in conduction capability, whereas the SiC on-resistance is only minimally affected</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TPEL.2006.889890</doi><tpages>11</tpages></addata></record> |
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| ispartof | IEEE transactions on power electronics, 2007-03, Vol.22 (2), p.353-363 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Capacitance Channels Circuits Devices DiMOSFET Electric currents Electric potential Electric resistance Electric, optical and optoelectronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Immune system Mathematical models MOSFET circuits MOSFETs Other multijunction devices. Power transistors. Thyristors Parameter extraction Power MOSFET Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Silicon carbide silicon carbide (SiC) Temperature Theoretical study. Circuits analysis and design Threshold voltage Transconductance Transistors Voltage |
| title | Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence |
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