Investigation on the Initial Hot-Carrier Injection in P-LDMOS Transistors With Shallow Trench Isolation Structure
In this paper, early-stage hot-electron generation is shown to inject electrons into the shallow trench isolation (STI) edge above the drift region that causes the linear-region drain current to increase abruptly in the first moment of the stress for P-LDMOS transistors. After this early-stage carri...
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| Veröffentlicht in: | IEEE transactions on electron devices 2008-12, Vol.55 (12), p.3569-3574 |
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| container_title | IEEE transactions on electron devices |
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| creator | Ru-Yi Su Chiang, P.Y. Jeng Gong Tsung Yi Huang Chun-Lin Tsai Chou, C.C. Liu, C.M. |
| description | In this paper, early-stage hot-electron generation is shown to inject electrons into the shallow trench isolation (STI) edge above the drift region that causes the linear-region drain current to increase abruptly in the first moment of the stress for P-LDMOS transistors. After this early-stage carrier trapping, the transistor exhibits normal hot-carrier degradation during the following stress period. To further study this phenomenon, the geometry and the doping profile of the drift region near the STI edge and the polysilicon gate doping area are changed to investigate the initial I DLIN increase. Two-dimensional device simulator is used to analyze the experimental results. It is proven that the amount of current increase strongly depends on the distance from the maximum impact ionization generation rate point to the STI. |
| doi_str_mv | 10.1109/TED.2008.2006922 |
| format | Article |
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After this early-stage carrier trapping, the transistor exhibits normal hot-carrier degradation during the following stress period. To further study this phenomenon, the geometry and the doping profile of the drift region near the STI edge and the polysilicon gate doping area are changed to investigate the initial I DLIN increase. Two-dimensional device simulator is used to analyze the experimental results. It is proven that the amount of current increase strongly depends on the distance from the maximum impact ionization generation rate point to the STI.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2008.2006922</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Devices ; Doping ; Drains ; Drift ; Electronics ; Exact sciences and technology ; Hot carrier injection ; Hot-electron generation ; Impact ionization ; initial degradation mechanism ; MOSFETs ; P-LDMOS transistors ; Reliability ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Stresses ; Transistors ; Trenches</subject><ispartof>IEEE transactions on electron devices, 2008-12, Vol.55 (12), p.3569-3574</ispartof><rights>2009 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2008</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c415t-10c7fe66579ab80444febe5b3d15bf48b3c082558fd3bbf5b91c974983378f3d3</citedby><cites>FETCH-LOGICAL-c415t-10c7fe66579ab80444febe5b3d15bf48b3c082558fd3bbf5b91c974983378f3d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4674573$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4674573$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20911501$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Ru-Yi Su</creatorcontrib><creatorcontrib>Chiang, P.Y.</creatorcontrib><creatorcontrib>Jeng Gong</creatorcontrib><creatorcontrib>Tsung Yi Huang</creatorcontrib><creatorcontrib>Chun-Lin Tsai</creatorcontrib><creatorcontrib>Chou, C.C.</creatorcontrib><creatorcontrib>Liu, C.M.</creatorcontrib><title>Investigation on the Initial Hot-Carrier Injection in P-LDMOS Transistors With Shallow Trench Isolation Structure</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>In this paper, early-stage hot-electron generation is shown to inject electrons into the shallow trench isolation (STI) edge above the drift region that causes the linear-region drain current to increase abruptly in the first moment of the stress for P-LDMOS transistors. After this early-stage carrier trapping, the transistor exhibits normal hot-carrier degradation during the following stress period. To further study this phenomenon, the geometry and the doping profile of the drift region near the STI edge and the polysilicon gate doping area are changed to investigate the initial I DLIN increase. Two-dimensional device simulator is used to analyze the experimental results. It is proven that the amount of current increase strongly depends on the distance from the maximum impact ionization generation rate point to the STI.</description><subject>Applied sciences</subject><subject>Devices</subject><subject>Doping</subject><subject>Drains</subject><subject>Drift</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Hot carrier injection</subject><subject>Hot-electron generation</subject><subject>Impact ionization</subject><subject>initial degradation mechanism</subject><subject>MOSFETs</subject><subject>P-LDMOS transistors</subject><subject>Reliability</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Stresses</subject><subject>Transistors</subject><subject>Trenches</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkc1LXDEUxYNUcGq7L7h5CNXVs_n-WMqodWDEwkzpMuRlEifD80WTPKX_vZnO4KKLFkLCzf3dQ04OAF8QvEAIqm_L66sLDKHcblxhfAAmiDHRKk75BzCBEMlWEUmOwMecN7XklOIJeJ4NLy6X8GBKiENTV1m7ZjaEEkzf3MbSTk1KwaV6t3H2DxSG5kc7v7q7XzTLZIYccokpN79CWTeLten7-FobbrDrZpZjv1NelDTaMib3CRx602f3eX8eg58318vpbTu__z6bXs5bSxErLYJWeMc5E8p0ElJKvesc68gKsc5T2RELJWZM-hXpOs86hawSVElChPRkRY7B-U73KcXnsXrUjyFb1_dmcHHMWkHCCRWS_5eUgsEqrGglz_5JkvpMihmu4Olf4CaOaah-teSYMlqNVQjuIJtizsl5_ZTCo0m_NYJ6G6quoeptqHofah35utc12Zre1--3Ib_PYagQYhBV7mTHBefce5tyQZkg5A0yeKmV</recordid><startdate>20081201</startdate><enddate>20081201</enddate><creator>Ru-Yi Su</creator><creator>Chiang, P.Y.</creator><creator>Jeng Gong</creator><creator>Tsung Yi Huang</creator><creator>Chun-Lin Tsai</creator><creator>Chou, C.C.</creator><creator>Liu, C.M.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20081201</creationdate><title>Investigation on the Initial Hot-Carrier Injection in P-LDMOS Transistors With Shallow Trench Isolation Structure</title><author>Ru-Yi Su ; Chiang, P.Y. ; Jeng Gong ; Tsung Yi Huang ; Chun-Lin Tsai ; Chou, C.C. ; Liu, C.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c415t-10c7fe66579ab80444febe5b3d15bf48b3c082558fd3bbf5b91c974983378f3d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Applied sciences</topic><topic>Devices</topic><topic>Doping</topic><topic>Drains</topic><topic>Drift</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Hot carrier injection</topic><topic>Hot-electron generation</topic><topic>Impact ionization</topic><topic>initial degradation mechanism</topic><topic>MOSFETs</topic><topic>P-LDMOS transistors</topic><topic>Reliability</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Stresses</topic><topic>Transistors</topic><topic>Trenches</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ru-Yi Su</creatorcontrib><creatorcontrib>Chiang, P.Y.</creatorcontrib><creatorcontrib>Jeng Gong</creatorcontrib><creatorcontrib>Tsung Yi Huang</creatorcontrib><creatorcontrib>Chun-Lin Tsai</creatorcontrib><creatorcontrib>Chou, C.C.</creatorcontrib><creatorcontrib>Liu, C.M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ru-Yi Su</au><au>Chiang, P.Y.</au><au>Jeng Gong</au><au>Tsung Yi Huang</au><au>Chun-Lin Tsai</au><au>Chou, C.C.</au><au>Liu, C.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation on the Initial Hot-Carrier Injection in P-LDMOS Transistors With Shallow Trench Isolation Structure</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2008-12-01</date><risdate>2008</risdate><volume>55</volume><issue>12</issue><spage>3569</spage><epage>3574</epage><pages>3569-3574</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>In this paper, early-stage hot-electron generation is shown to inject electrons into the shallow trench isolation (STI) edge above the drift region that causes the linear-region drain current to increase abruptly in the first moment of the stress for P-LDMOS transistors. After this early-stage carrier trapping, the transistor exhibits normal hot-carrier degradation during the following stress period. To further study this phenomenon, the geometry and the doping profile of the drift region near the STI edge and the polysilicon gate doping area are changed to investigate the initial I DLIN increase. Two-dimensional device simulator is used to analyze the experimental results. It is proven that the amount of current increase strongly depends on the distance from the maximum impact ionization generation rate point to the STI.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2008.2006922</doi><tpages>6</tpages></addata></record> |
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| subjects | Applied sciences Devices Doping Drains Drift Electronics Exact sciences and technology Hot carrier injection Hot-electron generation Impact ionization initial degradation mechanism MOSFETs P-LDMOS transistors Reliability Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stresses Transistors Trenches |
| title | Investigation on the Initial Hot-Carrier Injection in P-LDMOS Transistors With Shallow Trench Isolation Structure |
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