Enhancement in the gain of quantum dot laser by increasing overlap integral between electron and hole wave-functions

We report the influences of quantum dot (QD) shape on the lasing characteristics such as threshold current, slope efficiency, and wavelength stability. The average heights of the shape-engineered InAs/InAlGaAs QDs (SEQDs) and the conventionally-grown Stranski-Krastanov InAs QDs (CQD) were 10 ± 0.5 a...

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Veröffentlicht in:	Thin solid films 2009-05, Vol.517 (14), p.3983-3986
Hauptverfasser:	Jo, Byounggu, Yang, Youngsin, Kim, Jaesu, Ko, Myoungkuk, Lee, Kwang Jae, Lee, Cheul-Ro, Kim, Jin Soo, Choi, Byoung Seok, Oh, Dae Kon, Leem, Jae-Young, Kim, Jong Su
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier confinement Cross-disciplinary physics: materials science rheology Exact sciences and technology Fundamental areas of phenomenology (including applications) Laser diode Lasers Materials science Nanoscale materials and structures: fabrication and characterization Optics Other semiconductors Other topics in nanoscale materials and structures Physics Quantum dot Quantum dots Semiconductor lasers laser diodes Specific materials
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