Light Source Position Measurement Technique Applicable in SOI Technology
Integrated optical sensors make use of a p-n-junction for light intensity detection, typically. Because of the costs, additional optical components are not available in standard integration processes. Therefore, in higher level optical sensors extra optical components are not part of an integration....
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| Veröffentlicht in: | IEEE journal of solid-state circuits 2008-07, Vol.43 (7), p.1588-1593 |
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| container_end_page | 1593 |
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| container_issue | 7 |
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| container_title | IEEE journal of solid-state circuits |
| container_volume | 43 |
| creator | Koch, C. Oehm, J. Emde, J. Budde, W. |
| description | Integrated optical sensors make use of a p-n-junction for light intensity detection, typically. Because of the costs, additional optical components are not available in standard integration processes. Therefore, in higher level optical sensors extra optical components are not part of an integration. In this paper a concept for integration is proposed, which especially allows to measure the angles of a far distance light source relative to the surface of the chip and the coordinate system of the integrated structure. The invention makes use of the stack topology and the light opacity of metal layers in the monolithic integration, the light translucency of , and the electrical light sensitivity of diodes. Because of perfect device isolation the implementation can be done most advantageously in SOI CMOS technology. With minor modifications it is applicable in other integration technologies as well. But leakage currents and device mismatching will limit the obtainable performance additionally. |
| doi_str_mv | 10.1109/JSSC.2008.922402 |
| format | Article |
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Because of the costs, additional optical components are not available in standard integration processes. Therefore, in higher level optical sensors extra optical components are not part of an integration. In this paper a concept for integration is proposed, which especially allows to measure the angles of a far distance light source relative to the surface of the chip and the coordinate system of the integrated structure. The invention makes use of the stack topology and the light opacity of metal layers in the monolithic integration, the light translucency of , and the electrical light sensitivity of diodes. Because of perfect device isolation the implementation can be done most advantageously in SOI CMOS technology. With minor modifications it is applicable in other integration technologies as well. But leakage currents and device mismatching will limit the obtainable performance additionally.</description><subject>CMOS</subject><subject>CMOS technology</subject><subject>Coordinate measuring machines</subject><subject>Costs</subject><subject>Devices</subject><subject>Diodes</subject><subject>Discrete angle detection</subject><subject>Goniometers</subject><subject>high-sensitivity sensor</subject><subject>Isolation technology</subject><subject>Leakage current</subject><subject>Light</subject><subject>Light sources</subject><subject>low-cost optical sensor</subject><subject>Measurement techniques</subject><subject>Optical components</subject><subject>Optical devices</subject><subject>optical sensor</subject><subject>Optical sensors</subject><subject>Position measurement</subject><subject>Semiconductor device measurement</subject><subject>SOI technology</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kT1PwzAQhi0EEuVjR2KJGIAlxWc7jj2iCiioqEgtEpvlupfWKE1KnA78exwFMTB0Op3uua_3JeQC6BCA6ruX2Ww0ZJSqoWZMUHZABpBlKoWcfxySAaWgUh3rx-QkhM-YCqFgQMYTv1q3yazeNQ6Ttzr41tdV8oo27BrcYNUmc3Tryn_tMLnfbkvv7KLExFfJbPrc1-qyXn2fkaPClgHPf-MpeX98mI_G6WT69Dy6n6SOK9mmBQgrcywwp8uF5VLxhdSuyLRdcqGUYFpYznPLXLG0BQBYYI7mtlCgpcOcn5Kbfu62qeNNoTUbHxyWpa2w3gWjKZecsoxH8novyYUQUkoWwdu9IMgceAacdduv_qGfUbkqPmw0RN01091i2kOuqUNosDDbxm9s822Ams4s05llOrNMb1ZsuexbPCL-4SLLqBTAfwAS_o6b</recordid><startdate>20080701</startdate><enddate>20080701</enddate><creator>Koch, C.</creator><creator>Oehm, J.</creator><creator>Emde, J.</creator><creator>Budde, W.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| ispartof | IEEE journal of solid-state circuits, 2008-07, Vol.43 (7), p.1588-1593 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | CMOS CMOS technology Coordinate measuring machines Costs Devices Diodes Discrete angle detection Goniometers high-sensitivity sensor Isolation technology Leakage current Light Light sources low-cost optical sensor Measurement techniques Optical components Optical devices optical sensor Optical sensors Position measurement Semiconductor device measurement SOI technology |
| title | Light Source Position Measurement Technique Applicable in SOI Technology |
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