Low-temperature growth of polycrystalline Ge thin film on glass by in situ deposition and ex situ solid-phase crystallization for photovoltaic applications
Poly-crystalline germanium (poly-Ge) thin films have potential for lowering the manufacturing cost of photovoltaic devices especially in tandem solar cells, but high crystalline quality would be required. This work investigates the crystallinity of sputtered Ge thin films on glass prepared by in sit...
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| Veröffentlicht in: | Applied surface science 2009-05, Vol.255 (15), p.7028-7035 |
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| creator | Tsao, Chao-Yang Weber, Jürgen W. Campbell, Patrick Widenborg, Per I. Song, Dengyuan Green, Martin A. |
| description | Poly-crystalline germanium (poly-Ge) thin films have potential for lowering the manufacturing cost of photovoltaic devices especially in tandem solar cells, but high crystalline quality would be required. This work investigates the crystallinity of sputtered Ge thin films on glass prepared by
in situ growth and
ex situ solid-phase crystallization (SPC). Structural properties of the films were characterized by Raman, X-ray diffraction and ultraviolet–visible reflectance measurements. The results show the transition temperature from amorphous to polycrystalline is between 255
°C and 280
°C for
in situ grown poly-Ge films, whereas the transition temperature is between 400
°C and 500
°C for films produced by SPC for a 20
h annealing time. The
in situ growth
in situ crystallized poly-Ge films at 450
°C exhibit significantly better crystalline quality than those formed by solid-phase crystallization at 600
°C. High crystalline quality at low substrate temperature obtained in this work suggests the poly-Ge films could be promising for use in thin film solar cells on glass. |
| doi_str_mv | 10.1016/j.apsusc.2009.03.035 |
| format | Article |
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in situ growth and
ex situ solid-phase crystallization (SPC). Structural properties of the films were characterized by Raman, X-ray diffraction and ultraviolet–visible reflectance measurements. The results show the transition temperature from amorphous to polycrystalline is between 255
°C and 280
°C for
in situ grown poly-Ge films, whereas the transition temperature is between 400
°C and 500
°C for films produced by SPC for a 20
h annealing time. The
in situ growth
in situ crystallized poly-Ge films at 450
°C exhibit significantly better crystalline quality than those formed by solid-phase crystallization at 600
°C. High crystalline quality at low substrate temperature obtained in this work suggests the poly-Ge films could be promising for use in thin film solar cells on glass.</description><identifier>ISSN: 0169-4332</identifier><identifier>EISSN: 1873-5584</identifier><identifier>DOI: 10.1016/j.apsusc.2009.03.035</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Physics ; Poly-crystalline germanium ; Solid-phase crystallization ; Sputtering ; Thin film</subject><ispartof>Applied surface science, 2009-05, Vol.255 (15), p.7028-7035</ispartof><rights>2009 Elsevier B.V.</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c465t-f6d0a9e271d7515b2d497f8a8dffebb3fa3589ee48ea09cbed53552acb0de6fc3</citedby><cites>FETCH-LOGICAL-c465t-f6d0a9e271d7515b2d497f8a8dffebb3fa3589ee48ea09cbed53552acb0de6fc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.apsusc.2009.03.035$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3548,27923,27924,45994</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21505921$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Tsao, Chao-Yang</creatorcontrib><creatorcontrib>Weber, Jürgen W.</creatorcontrib><creatorcontrib>Campbell, Patrick</creatorcontrib><creatorcontrib>Widenborg, Per I.</creatorcontrib><creatorcontrib>Song, Dengyuan</creatorcontrib><creatorcontrib>Green, Martin A.</creatorcontrib><title>Low-temperature growth of polycrystalline Ge thin film on glass by in situ deposition and ex situ solid-phase crystallization for photovoltaic applications</title><title>Applied surface science</title><description>Poly-crystalline germanium (poly-Ge) thin films have potential for lowering the manufacturing cost of photovoltaic devices especially in tandem solar cells, but high crystalline quality would be required. This work investigates the crystallinity of sputtered Ge thin films on glass prepared by
in situ growth and
ex situ solid-phase crystallization (SPC). Structural properties of the films were characterized by Raman, X-ray diffraction and ultraviolet–visible reflectance measurements. The results show the transition temperature from amorphous to polycrystalline is between 255
°C and 280
°C for
in situ grown poly-Ge films, whereas the transition temperature is between 400
°C and 500
°C for films produced by SPC for a 20
h annealing time. The
in situ growth
in situ crystallized poly-Ge films at 450
°C exhibit significantly better crystalline quality than those formed by solid-phase crystallization at 600
°C. High crystalline quality at low substrate temperature obtained in this work suggests the poly-Ge films could be promising for use in thin film solar cells on glass.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Poly-crystalline germanium</subject><subject>Solid-phase crystallization</subject><subject>Sputtering</subject><subject>Thin film</subject><issn>0169-4332</issn><issn>1873-5584</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp9kc-KFDEQxhtRcBx9Aw-5qKcek06n_1wEWXR3YcCLnkN1UtnJkOnEJL3r-Cq-rNntZY8LBQlVv-8rqK-q3jO6Y5R1n487CGlJatdQOu4oLyVeVBs29LwWYmhfVpuCjXXLefO6epPSkVLWlOmm-rf3d3XGU8AIeYlIbqK_ywfiDQnenVU8pwzO2RnJJZJ8sDMx1p2In8mNg5TIdCall2xeiMbgy8eWGcya4J-1nbyzug4HSEie_P7CA2d8JOHgs7_1LoNVBEJwVj0M09vqlQGX8N3ju61-ff_28-Kq3v-4vL74uq9V24lcm05TGLHpme4FE1Oj27E3AwzaGJwmboCLYURsBwQ6qgm14EI0oCaqsTOKb6tPq2-I_veCKcuTTQqdgxn9kuRIedcURV_Ij8-SvC0nbgu_rdoVVNGnFNHIEO0J4lkyKu8zk0e5ZibvM5OUlxJF9uHRH5ICZyLMyqYnbcMEFWPDCvdl5bCc5dZilElZnBVqG1Flqb19ftF_tiK0ug</recordid><startdate>20090515</startdate><enddate>20090515</enddate><creator>Tsao, Chao-Yang</creator><creator>Weber, Jürgen W.</creator><creator>Campbell, Patrick</creator><creator>Widenborg, Per I.</creator><creator>Song, Dengyuan</creator><creator>Green, Martin A.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20090515</creationdate><title>Low-temperature growth of polycrystalline Ge thin film on glass by in situ deposition and ex situ solid-phase crystallization for photovoltaic applications</title><author>Tsao, Chao-Yang ; Weber, Jürgen W. ; Campbell, Patrick ; Widenborg, Per I. ; Song, Dengyuan ; Green, Martin A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c465t-f6d0a9e271d7515b2d497f8a8dffebb3fa3589ee48ea09cbed53552acb0de6fc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Poly-crystalline germanium</topic><topic>Solid-phase crystallization</topic><topic>Sputtering</topic><topic>Thin film</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tsao, Chao-Yang</creatorcontrib><creatorcontrib>Weber, Jürgen W.</creatorcontrib><creatorcontrib>Campbell, Patrick</creatorcontrib><creatorcontrib>Widenborg, Per I.</creatorcontrib><creatorcontrib>Song, Dengyuan</creatorcontrib><creatorcontrib>Green, Martin A.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tsao, Chao-Yang</au><au>Weber, Jürgen W.</au><au>Campbell, Patrick</au><au>Widenborg, Per I.</au><au>Song, Dengyuan</au><au>Green, Martin A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low-temperature growth of polycrystalline Ge thin film on glass by in situ deposition and ex situ solid-phase crystallization for photovoltaic applications</atitle><jtitle>Applied surface science</jtitle><date>2009-05-15</date><risdate>2009</risdate><volume>255</volume><issue>15</issue><spage>7028</spage><epage>7035</epage><pages>7028-7035</pages><issn>0169-4332</issn><eissn>1873-5584</eissn><abstract>Poly-crystalline germanium (poly-Ge) thin films have potential for lowering the manufacturing cost of photovoltaic devices especially in tandem solar cells, but high crystalline quality would be required. This work investigates the crystallinity of sputtered Ge thin films on glass prepared by
in situ growth and
ex situ solid-phase crystallization (SPC). Structural properties of the films were characterized by Raman, X-ray diffraction and ultraviolet–visible reflectance measurements. The results show the transition temperature from amorphous to polycrystalline is between 255
°C and 280
°C for
in situ grown poly-Ge films, whereas the transition temperature is between 400
°C and 500
°C for films produced by SPC for a 20
h annealing time. The
in situ growth
in situ crystallized poly-Ge films at 450
°C exhibit significantly better crystalline quality than those formed by solid-phase crystallization at 600
°C. High crystalline quality at low substrate temperature obtained in this work suggests the poly-Ge films could be promising for use in thin film solar cells on glass.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.apsusc.2009.03.035</doi><tpages>8</tpages></addata></record> |
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| ispartof | Applied surface science, 2009-05, Vol.255 (15), p.7028-7035 |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Physics Poly-crystalline germanium Solid-phase crystallization Sputtering Thin film |
| title | Low-temperature growth of polycrystalline Ge thin film on glass by in situ deposition and ex situ solid-phase crystallization for photovoltaic applications |
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