Fabrication and properties of B–N codoped p-type ZnO thin films
A p-type B-N codoped ZnO film was grown on quartz by magnetron sputtering and post-annealing techniques. It has room-temperature resistivity of 2.3 W cm, Hall mobility of 11 cm@u2 V@@u-1@ s@@u-1@ and carrier concentration of 1.2 x 10@@u17@ cm@@u-3@, better than the electrical properties of the N-dop...
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| Veröffentlicht in: | Journal of physics. D, Applied physics Applied physics, 2009-03, Vol.42 (6), p.065101-065101 (5) |
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| container_end_page | 065101 (5) |
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| container_issue | 6 |
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| container_title | Journal of physics. D, Applied physics |
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| creator | Sui, Y R Yao, B Hua, Z Xing, G Z Huang, X M Yang, T Gao, L L Zhao, T T Pan, H L Zhu, H Liu, W W Wu, T |
| description | A p-type B-N codoped ZnO film was grown on quartz by magnetron sputtering and post-annealing techniques. It has room-temperature resistivity of 2.3 W cm, Hall mobility of 11 cm@u2 V@@u-1@ s@@u-1@ and carrier concentration of 1.2 x 10@@u17@ cm@@u-3@, better than the electrical properties of the N-doped p-type ZnO. The ZnO homojunction fabricated by deposition of an undoped n-type ZnO layer on the B-N codoped p-type ZnO layer showed clear p-n diode characteristics. Differing from the N-doped ZnO, the low-temperature photoluminescence spectrum of the codoped ZnO film consists of two dominant peaks located at 3.096 eV and 3.251 eV, respectively. The former is due to radiative electron transition from the conduction band to the Zn vacancy acceptor level, and the latter due to recombination of the donor-acceptor pair. The mechanism of p-type conductivity was discussed in this work. |
| doi_str_mv | 10.1088/0022-3727/42/6/065101 |
| format | Article |
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It has room-temperature resistivity of 2.3 W cm, Hall mobility of 11 cm@u2 V@@u-1@ s@@u-1@ and carrier concentration of 1.2 x 10@@u17@ cm@@u-3@, better than the electrical properties of the N-doped p-type ZnO. The ZnO homojunction fabricated by deposition of an undoped n-type ZnO layer on the B-N codoped p-type ZnO layer showed clear p-n diode characteristics. Differing from the N-doped ZnO, the low-temperature photoluminescence spectrum of the codoped ZnO film consists of two dominant peaks located at 3.096 eV and 3.251 eV, respectively. The former is due to radiative electron transition from the conduction band to the Zn vacancy acceptor level, and the latter due to recombination of the donor-acceptor pair. The mechanism of p-type conductivity was discussed in this work.</description><identifier>ISSN: 0022-3727</identifier><identifier>EISSN: 1361-6463</identifier><identifier>DOI: 10.1088/0022-3727/42/6/065101</identifier><identifier>CODEN: JPAPBE</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electrical properties of specific thin films ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Exact sciences and technology ; Ii-vi semiconductors ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of specific thin films ; Physics</subject><ispartof>Journal of physics. 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D, Applied physics</title><description>A p-type B-N codoped ZnO film was grown on quartz by magnetron sputtering and post-annealing techniques. It has room-temperature resistivity of 2.3 W cm, Hall mobility of 11 cm@u2 V@@u-1@ s@@u-1@ and carrier concentration of 1.2 x 10@@u17@ cm@@u-3@, better than the electrical properties of the N-doped p-type ZnO. The ZnO homojunction fabricated by deposition of an undoped n-type ZnO layer on the B-N codoped p-type ZnO layer showed clear p-n diode characteristics. Differing from the N-doped ZnO, the low-temperature photoluminescence spectrum of the codoped ZnO film consists of two dominant peaks located at 3.096 eV and 3.251 eV, respectively. The former is due to radiative electron transition from the conduction band to the Zn vacancy acceptor level, and the latter due to recombination of the donor-acceptor pair. The mechanism of p-type conductivity was discussed in this work.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electrical properties of specific thin films</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Ii-vi semiconductors</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of specific thin films</subject><subject>Physics</subject><issn>0022-3727</issn><issn>1361-6463</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqN0bFOwzAQAFALgUQpfAJSFmAh9Hx2nGQsFQWkii6wsFiOYwujNAlxOnTjH_hDvoREqbqAKiZLvnfn8x0h5xRuKCTJBAAxZDHGE44TMQERUaAHZESZoKHggh2S0c4ckxPv3wEgEgkdkelcZY3TqnVVGagyD-qmqk3TOuODyga3359fT4Gu8u6yi4XtpjbBa7kM2jdXBtYVK39KjqwqvDnbnmPyMr97nj2Ei-X942y6CDWPojZUViTAKUKWQZ7RHGPFIcnRYooZpJmONCY8jTmzPOVoohzzNI4xZbFWFgUbk6uhbtfhx9r4Vq6c16YoVGmqtZcpMIE97-TlXsk4B9a5f0AEzhh2MBqgbirvG2Nl3biVajaSgux3IPv5yn6-kqMUcthBl3exfUB5rQrbqFI7v0tGiiLqvzgm14NzVb2L_llS1rntOPzm-zv5AUvkoEc</recordid><startdate>20090321</startdate><enddate>20090321</enddate><creator>Sui, Y R</creator><creator>Yao, B</creator><creator>Hua, Z</creator><creator>Xing, G Z</creator><creator>Huang, X M</creator><creator>Yang, T</creator><creator>Gao, L L</creator><creator>Zhao, T T</creator><creator>Pan, H L</creator><creator>Zhu, H</creator><creator>Liu, W W</creator><creator>Wu, T</creator><general>IOP Publishing</general><general>Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20090321</creationdate><title>Fabrication and properties of B–N codoped p-type ZnO thin films</title><author>Sui, Y R ; Yao, B ; Hua, Z ; Xing, G Z ; Huang, X M ; Yang, T ; Gao, L L ; Zhao, T T ; Pan, H L ; Zhu, H ; Liu, W W ; Wu, T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c455t-af6804120bb0db1d27a408d2f292b09bc5c2849743f4942e5d2d9772937caf263</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electrical properties of specific thin films</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Ii-vi semiconductors</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of specific thin films</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sui, Y R</creatorcontrib><creatorcontrib>Yao, B</creatorcontrib><creatorcontrib>Hua, Z</creatorcontrib><creatorcontrib>Xing, G Z</creatorcontrib><creatorcontrib>Huang, X M</creatorcontrib><creatorcontrib>Yang, T</creatorcontrib><creatorcontrib>Gao, L L</creatorcontrib><creatorcontrib>Zhao, T T</creatorcontrib><creatorcontrib>Pan, H L</creatorcontrib><creatorcontrib>Zhu, H</creatorcontrib><creatorcontrib>Liu, W W</creatorcontrib><creatorcontrib>Wu, T</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of physics. D, Applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sui, Y R</au><au>Yao, B</au><au>Hua, Z</au><au>Xing, G Z</au><au>Huang, X M</au><au>Yang, T</au><au>Gao, L L</au><au>Zhao, T T</au><au>Pan, H L</au><au>Zhu, H</au><au>Liu, W W</au><au>Wu, T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication and properties of B–N codoped p-type ZnO thin films</atitle><jtitle>Journal of physics. D, Applied physics</jtitle><date>2009-03-21</date><risdate>2009</risdate><volume>42</volume><issue>6</issue><spage>065101</spage><epage>065101 (5)</epage><pages>065101-065101 (5)</pages><issn>0022-3727</issn><eissn>1361-6463</eissn><coden>JPAPBE</coden><abstract>A p-type B-N codoped ZnO film was grown on quartz by magnetron sputtering and post-annealing techniques. It has room-temperature resistivity of 2.3 W cm, Hall mobility of 11 cm@u2 V@@u-1@ s@@u-1@ and carrier concentration of 1.2 x 10@@u17@ cm@@u-3@, better than the electrical properties of the N-doped p-type ZnO. The ZnO homojunction fabricated by deposition of an undoped n-type ZnO layer on the B-N codoped p-type ZnO layer showed clear p-n diode characteristics. Differing from the N-doped ZnO, the low-temperature photoluminescence spectrum of the codoped ZnO film consists of two dominant peaks located at 3.096 eV and 3.251 eV, respectively. The former is due to radiative electron transition from the conduction band to the Zn vacancy acceptor level, and the latter due to recombination of the donor-acceptor pair. The mechanism of p-type conductivity was discussed in this work.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/0022-3727/42/6/065101</doi></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Ii-vi semiconductors Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics |
| title | Fabrication and properties of B–N codoped p-type ZnO thin films |
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