Highly Sensitive Focus Monitoring on Production Wafer by Scatterometry Measurements for 90/65-nm Node Devices
RENESAS factories are starting to use scatterometry for inline focus measurement. This paper presents the development of the method used for nondestructive, high accuracy, and high-speed focus measurement on production wafers. Focus change results in a subtle variation of the photoresist shape, and...
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| Veröffentlicht in: | IEEE transactions on semiconductor manufacturing 2007-08, Vol.20 (3), p.222-231 |
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| creator | Kawachi, T.. Fudo, H.. Iwata, Y.. Matsumoto, S.. Sasazawa, H.. Mori, T.. |
| description | RENESAS factories are starting to use scatterometry for inline focus measurement. This paper presents the development of the method used for nondestructive, high accuracy, and high-speed focus measurement on production wafers. Focus change results in a subtle variation of the photoresist shape, and this phenomenon is parameterized by using a new eight-layer model. Partial least squares regression methods are used to calculate focus from scatterometry measurement results. The measurement error for a focus variation of 0.1 mum is within 30 nm. This method enables the focus offset to be corrected more frequently without increasing the aligner machine downtime and reduces the depth of focus required because of aligner fluctuation. With it, we will be able to get sufficient focus margins for mass production of devices beyond the 65-nm-node devices. |
| doi_str_mv | 10.1109/TSM.2007.901831 |
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This paper presents the development of the method used for nondestructive, high accuracy, and high-speed focus measurement on production wafers. Focus change results in a subtle variation of the photoresist shape, and this phenomenon is parameterized by using a new eight-layer model. Partial least squares regression methods are used to calculate focus from scatterometry measurement results. The measurement error for a focus variation of 0.1 mum is within 30 nm. This method enables the focus offset to be corrected more frequently without increasing the aligner machine downtime and reduces the depth of focus required because of aligner fluctuation. With it, we will be able to get sufficient focus margins for mass production of devices beyond the 65-nm-node devices.</description><identifier>ISSN: 0894-6507</identifier><identifier>EISSN: 1558-2345</identifier><identifier>DOI: 10.1109/TSM.2007.901831</identifier><identifier>CODEN: ITSMED</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Alignment ; Applied sciences ; Devices ; Downtime ; Electronics ; Exact sciences and technology ; Fluctuations ; Focusing ; Least squares methods ; Manufacturing engineering ; Mass production ; Measurement errors ; Microelectronic fabrication (materials and surfaces technology) ; Monitoring ; photolithography ; Production facilities ; Radar measurements ; Regression ; Resists ; scatterometry ; Semiconductor device modeling ; Semiconductor electronics. Microelectronics. Optoelectronics. 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This paper presents the development of the method used for nondestructive, high accuracy, and high-speed focus measurement on production wafers. Focus change results in a subtle variation of the photoresist shape, and this phenomenon is parameterized by using a new eight-layer model. Partial least squares regression methods are used to calculate focus from scatterometry measurement results. The measurement error for a focus variation of 0.1 mum is within 30 nm. This method enables the focus offset to be corrected more frequently without increasing the aligner machine downtime and reduces the depth of focus required because of aligner fluctuation. With it, we will be able to get sufficient focus margins for mass production of devices beyond the 65-nm-node devices.</description><subject>Alignment</subject><subject>Applied sciences</subject><subject>Devices</subject><subject>Downtime</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fluctuations</subject><subject>Focusing</subject><subject>Least squares methods</subject><subject>Manufacturing engineering</subject><subject>Mass production</subject><subject>Measurement errors</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Monitoring</subject><subject>photolithography</subject><subject>Production facilities</subject><subject>Radar measurements</subject><subject>Regression</subject><subject>Resists</subject><subject>scatterometry</subject><subject>Semiconductor device modeling</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductors</subject><subject>Shape</subject><subject>Wafers</subject><issn>0894-6507</issn><issn>1558-2345</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqN0ctr3DAQB2BTWug27bmHXkShj4t3Z2w9jyWPppBtC0np0cjyOFWwrUSyA_vfV8uGFnoIPQgJ9M0MzK8oXiOsEcFsri636wpArQ2grvFJsUIhdFnVXDwtVqANL6UA9bx4kdINAHJu1KoYz_31r2HHLmlKfvb3xM6CWxLbhsnPIfrpmoWJfY-hW9zs8_On7SmyNlc4O88Uw0hz3LEt2bREGmmaE-tDZAY2UpTTyL6GjtgJ3XtH6WXxrLdDolcP91Hx4-z06vi8vPj2-cvxp4vSca7mUkstkTR20PaoW9Gq3mqnHWhdGYIOOyV5B8CdaCEf1ekKe94jaCVBY31UfDj0vY3hbqE0N6NPjobBThSW1BioJRpEnuX7R2XNOXJVyww_PgqxlgKFBFX_B-WG1xVX-_Fv_6E3YYlT3k1jsEJdKdijzQG5GFKK1De30Y827hqEZp99k7Nv9tk3h-xzxbuHtjY5O_TRTs6nv2XaGDBSZffm4DwR_fnmlRZ50fVvfIK04A</recordid><startdate>20070801</startdate><enddate>20070801</enddate><creator>Kawachi, T..</creator><creator>Fudo, H..</creator><creator>Iwata, Y..</creator><creator>Matsumoto, S..</creator><creator>Sasazawa, H..</creator><creator>Mori, T..</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Solid state devices</topic><topic>Semiconductors</topic><topic>Shape</topic><topic>Wafers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kawachi, T..</creatorcontrib><creatorcontrib>Fudo, H..</creatorcontrib><creatorcontrib>Iwata, Y..</creatorcontrib><creatorcontrib>Matsumoto, S..</creatorcontrib><creatorcontrib>Sasazawa, H..</creatorcontrib><creatorcontrib>Mori, T..</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on semiconductor manufacturing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kawachi, T..</au><au>Fudo, H..</au><au>Iwata, Y..</au><au>Matsumoto, S..</au><au>Sasazawa, H..</au><au>Mori, T..</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Highly Sensitive Focus Monitoring on Production Wafer by Scatterometry Measurements for 90/65-nm Node Devices</atitle><jtitle>IEEE transactions on semiconductor manufacturing</jtitle><stitle>TSM</stitle><date>2007-08-01</date><risdate>2007</risdate><volume>20</volume><issue>3</issue><spage>222</spage><epage>231</epage><pages>222-231</pages><issn>0894-6507</issn><eissn>1558-2345</eissn><coden>ITSMED</coden><abstract>RENESAS factories are starting to use scatterometry for inline focus measurement. This paper presents the development of the method used for nondestructive, high accuracy, and high-speed focus measurement on production wafers. Focus change results in a subtle variation of the photoresist shape, and this phenomenon is parameterized by using a new eight-layer model. Partial least squares regression methods are used to calculate focus from scatterometry measurement results. The measurement error for a focus variation of 0.1 mum is within 30 nm. This method enables the focus offset to be corrected more frequently without increasing the aligner machine downtime and reduces the depth of focus required because of aligner fluctuation. With it, we will be able to get sufficient focus margins for mass production of devices beyond the 65-nm-node devices.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TSM.2007.901831</doi><tpages>10</tpages></addata></record> |
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| subjects | Alignment Applied sciences Devices Downtime Electronics Exact sciences and technology Fluctuations Focusing Least squares methods Manufacturing engineering Mass production Measurement errors Microelectronic fabrication (materials and surfaces technology) Monitoring photolithography Production facilities Radar measurements Regression Resists scatterometry Semiconductor device modeling Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Shape Wafers |
| title | Highly Sensitive Focus Monitoring on Production Wafer by Scatterometry Measurements for 90/65-nm Node Devices |
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