Degradation modeling of InGaP/GaAs/Ge triple-junction solar cells irradiated with various-energy protons

Degradation modeling of InGaP/GaAs/Ge triple-junction (3J) solar cells subjected to proton irradiation is performed with the use of a one-dimensional optical device simulator, PC1D. By fitting the external quantum efficiencies of 3J solar cells degraded by 30 keV, 150 keV, 3 MeV, or 10 MeV protons,...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Solar energy materials and solar cells 2009-06, Vol.93 (6), p.768-773
Hauptverfasser:	Sato, Shin-ichiro, Miyamoto, Haruki, Imaizumi, Mitsuru, Shimazaki, Kazunori, Morioka, Chiharu, Kawano, Katsuyasu, Ohshima, Takeshi
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Carrier removal rate Damage coefficient Degradation Degradation modeling Diffusion Efficiency Energy Exact sciences and technology Irradiation Natural energy Photovoltaic conversion Proton irradiation Q1 solar cells Solar cells. Photoelectrochemical cells Solar energy Triple-junction solar cell
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!