Design and Fabrication of 4H-SiC RF MOSFETs

We present simulations, fabrication and analysis of 4H-SiC RF power MOSFETs. We obtain an extrinsic transition frequency of 11.2 GHz and an /max = 11.9 GHz, a breakdown voltage above 200 V and an output power of 1.9 W/mm at 3 GHz. The measured devices are double fingered, source-gate-drain-gate-sour...

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Veröffentlicht in:	IEEE transactions on electron devices 2007-12, Vol.54 (12), p.3138-3145
Hauptverfasser:	Gudjonsson, G.I., Allerstam, F., Sveinbjornsson, E.O., Hjelmgren, H., Nilsson, P.-A., Andersson, K., Zirath, H., Rodle, T., Jos, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplifiers Applied sciences Breakdown Channels Circuit properties Density Devices Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology HF amplifiers Materials MOSFET MOSFETs Other multijunction devices. Power transistors. Thyristors Power MOSFET power MOSFETs Radio frequencies Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon carbide Transistors Voltage
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