A 3-V, 0.35-μm CMOS Bluetooth receiver IC
A fully integrated CMOS low-IF Bluetooth receiver is presented. The receiver consists of a radio frequency (RF) front end, a phase-locked loop (PLL), an active complex filter, a Gaussian frequency shift keying (GFSK) demodulator, and a frequency offset cancellation circuit. The highlights of the rec...
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Veröffentlicht in: | IEEE journal of solid-state circuits 2003-01, Vol.38 (1), p.30-42 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A fully integrated CMOS low-IF Bluetooth receiver is presented. The receiver consists of a radio frequency (RF) front end, a phase-locked loop (PLL), an active complex filter, a Gaussian frequency shift keying (GFSK) demodulator, and a frequency offset cancellation circuit. The highlights of the receiver include a low-power active complex filter with a nonconventional tuning scheme and a high-performance mixed-mode GFSK demodulator. The chip was fabricated on a 6.25-mm super(2) die using TSMC 0.35- mu m standard CMOS process. -82 dBm sensitivity at 1e-3 bit error rate, -10 dBm IIP3, and 15 dB noise figure were achieved in the measurements. The receiver active current is about 65 mA from a 3-V power supply. |
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ISSN: | 0018-9200 |
DOI: | 10.1109/JSSC.2002.806277 |