A 3-V, 0.35-μm CMOS Bluetooth receiver IC

A fully integrated CMOS low-IF Bluetooth receiver is presented. The receiver consists of a radio frequency (RF) front end, a phase-locked loop (PLL), an active complex filter, a Gaussian frequency shift keying (GFSK) demodulator, and a frequency offset cancellation circuit. The highlights of the rec...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE journal of solid-state circuits 2003-01, Vol.38 (1), p.30-42
Hauptverfasser: Wenjun Sheng, Bo Xia, Emira, A.E., Chunyu Xin, Valero-Lopez, A.Y., Sung Tae Moon, Sanchez-Sinencio, E.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A fully integrated CMOS low-IF Bluetooth receiver is presented. The receiver consists of a radio frequency (RF) front end, a phase-locked loop (PLL), an active complex filter, a Gaussian frequency shift keying (GFSK) demodulator, and a frequency offset cancellation circuit. The highlights of the receiver include a low-power active complex filter with a nonconventional tuning scheme and a high-performance mixed-mode GFSK demodulator. The chip was fabricated on a 6.25-mm super(2) die using TSMC 0.35- mu m standard CMOS process. -82 dBm sensitivity at 1e-3 bit error rate, -10 dBm IIP3, and 15 dB noise figure were achieved in the measurements. The receiver active current is about 65 mA from a 3-V power supply.
ISSN:0018-9200
DOI:10.1109/JSSC.2002.806277