A low-power highly linear cascoded Multiple-Gated transistor CMOS RF amplifier with 10 dB IP3 improvement

A low-power highly linear CMOS RF amplifier circuit composed of a Multiple-Gated common-source FET TRansistor (MGTR) in cascode configuration is reported. In a MGTR amplifier, linearity is improved by using transconductance linearization which can be achieved by canceling the negative peak value of...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2003-06, Vol.13 (6), p.205-207
Hauptverfasser:	TAE WOOK KIM, KIM, Bonkee, NAM, Ilku, KO, Beomkyu, LEE, Kwyro
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplifiers Applied sciences Circuit properties CMOS Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Gates (circuits) Integrated circuits Linearity Noise levels Radio frequencies Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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