Investigation of 1.3- mu m GaInNAs vertical-cavity surface-emitting lasers (VCSELs) using temperature, high-pressure, and modeling techniques

We have investigated the temperature and pressure dependence of the threshold current (I sub(th)) of 1.3 mu m emitting GaInNAs vertical-cavity surface-emitting lasers (VCSELs) and the equivalent edge-emitting laser (EEL) devices employing the same active region. Our measurements show that the VCSEL...

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Veröffentlicht in:	IEEE journal of selected topics in quantum electronics 2003-09, Vol.9 (5)
Hauptverfasser:	Knowles, G, Fehse, R, Tomic, S, Sweeney, S J, Sale, TE, Adams, A R, O'Reilly, E P, Steinle, G, Riechert, H
Format:	Artikel
Sprache:	eng
Schlagworte:	Augers Devices Equivalence Gain Holes Mathematical models Threshold currents Vertical cavity surface emission lasers
Online-Zugang:	Volltext
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