Design and realization of high-power ripple-free superluminescent diodes at 1300 nm
To realize high-power superluminescent diodes (SLDs) emitting at the 1300-nm wavelength and to see how different structure parameters influence the device performances, three different epitaxial layers have been studied. It was found that the structure employing a graded-refractive-index separate-co...
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| Veröffentlicht in: | IEEE journal of quantum electronics 2004-09, Vol.40 (9), p.1270-1274 |
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| container_title | IEEE journal of quantum electronics |
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| creator | Fu, L. Schweizer, H. Yanshen Zhang Lan Li Baechle, A.M. Jochum, S. Bernatz, G.C. Hansmann, S. |
| description | To realize high-power superluminescent diodes (SLDs) emitting at the 1300-nm wavelength and to see how different structure parameters influence the device performances, three different epitaxial layers have been studied. It was found that the structure employing a graded-refractive-index separate-confinement heterostructure, with linearly graded p-doped cap layer and with eight quantum wells, is most suitable for high-power SLDs. With a proper design of a geometrical structure for SLDs, the obtained output power at 20/spl deg/C is about 25 mW under CW operation and 100 mW at 1.1 A under pulsed operation with no observable ripple. |
| doi_str_mv | 10.1109/JQE.2004.830178 |
| format | Article |
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It was found that the structure employing a graded-refractive-index separate-confinement heterostructure, with linearly graded p-doped cap layer and with eight quantum wells, is most suitable for high-power SLDs. With a proper design of a geometrical structure for SLDs, the obtained output power at 20/spl deg/C is about 25 mW under CW operation and 100 mW at 1.1 A under pulsed operation with no observable ripple.</description><identifier>ISSN: 0018-9197</identifier><identifier>EISSN: 1558-1713</identifier><identifier>DOI: 10.1109/JQE.2004.830178</identifier><identifier>CODEN: IEJQA7</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Capacitive sensors ; Devices ; Electronics ; Emittance ; Epitaxial layers ; Exact sciences and technology ; Gyroscopes ; Optical coupling ; Optical fiber devices ; Optoelectronic devices ; Power generation ; Quantum electronics ; Quantum well devices ; Quantum wells ; Ripples ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Semiconductor optical amplifiers ; Superluminescent diodes ; Wavelength division multiplexing ; Wavelengths</subject><ispartof>IEEE journal of quantum electronics, 2004-09, Vol.40 (9), p.1270-1274</ispartof><rights>2004 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2004</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c379t-eb3a02491ebcd00b957fc7a70c9a8c3a61ca5ad40175e9fc1e3e0a91c41d599a3</citedby><cites>FETCH-LOGICAL-c379t-eb3a02491ebcd00b957fc7a70c9a8c3a61ca5ad40175e9fc1e3e0a91c41d599a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1327776$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1327776$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16043010$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Fu, L.</creatorcontrib><creatorcontrib>Schweizer, H.</creatorcontrib><creatorcontrib>Yanshen Zhang</creatorcontrib><creatorcontrib>Lan Li</creatorcontrib><creatorcontrib>Baechle, A.M.</creatorcontrib><creatorcontrib>Jochum, S.</creatorcontrib><creatorcontrib>Bernatz, G.C.</creatorcontrib><creatorcontrib>Hansmann, S.</creatorcontrib><title>Design and realization of high-power ripple-free superluminescent diodes at 1300 nm</title><title>IEEE journal of quantum electronics</title><addtitle>JQE</addtitle><description>To realize high-power superluminescent diodes (SLDs) emitting at the 1300-nm wavelength and to see how different structure parameters influence the device performances, three different epitaxial layers have been studied. It was found that the structure employing a graded-refractive-index separate-confinement heterostructure, with linearly graded p-doped cap layer and with eight quantum wells, is most suitable for high-power SLDs. With a proper design of a geometrical structure for SLDs, the obtained output power at 20/spl deg/C is about 25 mW under CW operation and 100 mW at 1.1 A under pulsed operation with no observable ripple.</description><subject>Applied sciences</subject><subject>Capacitive sensors</subject><subject>Devices</subject><subject>Electronics</subject><subject>Emittance</subject><subject>Epitaxial layers</subject><subject>Exact sciences and technology</subject><subject>Gyroscopes</subject><subject>Optical coupling</subject><subject>Optical fiber devices</subject><subject>Optoelectronic devices</subject><subject>Power generation</subject><subject>Quantum electronics</subject><subject>Quantum well devices</subject><subject>Quantum wells</subject><subject>Ripples</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductor optical amplifiers</subject><subject>Superluminescent diodes</subject><subject>Wavelength division multiplexing</subject><subject>Wavelengths</subject><issn>0018-9197</issn><issn>1558-1713</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kc1r3DAQxUVpodu05x56EYU2J29mLNuSjiVN-kEghLZnMSuPEwWv7Eo2pfnro7CBQA89DcP83sw8nhBvEbaIYE--X51ta4BmaxSgNs_EBtvWVKhRPRcbADSVRatfilc535a2aQxsxI_PnMN1lBR7mZjGcEdLmKKcBnkTrm-qefrDSaYwzyNXQ2KWeZ05jes-RM6e4yL7MPWcJS0SFYCM-9fixUBj5jeP9Uj8Oj_7efq1urj88u3000XllbZLxTtFUDcWeed7gJ1t9eA1afCWjFfUoaeW-qa4adkOHlkxkEXfYN9aS-pIHB_2zmn6vXJe3D6Ul8aRIk9rdrYoAYzVhfz4X7I2dYcWmgK-_we8ndYUiwtnjLIGoLMFOjlAPk05Jx7cnMKe0l-H4B6ycCUL95CFO2RRFB8e11L2NA6Jog_5SdaV04BQuHcHLjDz01jVWutO3QPhWpDl</recordid><startdate>20040901</startdate><enddate>20040901</enddate><creator>Fu, L.</creator><creator>Schweizer, H.</creator><creator>Yanshen Zhang</creator><creator>Lan Li</creator><creator>Baechle, A.M.</creator><creator>Jochum, S.</creator><creator>Bernatz, G.C.</creator><creator>Hansmann, S.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Solid state devices</topic><topic>Semiconductor optical amplifiers</topic><topic>Superluminescent diodes</topic><topic>Wavelength division multiplexing</topic><topic>Wavelengths</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fu, L.</creatorcontrib><creatorcontrib>Schweizer, H.</creatorcontrib><creatorcontrib>Yanshen Zhang</creatorcontrib><creatorcontrib>Lan Li</creatorcontrib><creatorcontrib>Baechle, A.M.</creatorcontrib><creatorcontrib>Jochum, S.</creatorcontrib><creatorcontrib>Bernatz, G.C.</creatorcontrib><creatorcontrib>Hansmann, S.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE journal of quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Fu, L.</au><au>Schweizer, H.</au><au>Yanshen Zhang</au><au>Lan Li</au><au>Baechle, A.M.</au><au>Jochum, S.</au><au>Bernatz, G.C.</au><au>Hansmann, S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Design and realization of high-power ripple-free superluminescent diodes at 1300 nm</atitle><jtitle>IEEE journal of quantum electronics</jtitle><stitle>JQE</stitle><date>2004-09-01</date><risdate>2004</risdate><volume>40</volume><issue>9</issue><spage>1270</spage><epage>1274</epage><pages>1270-1274</pages><issn>0018-9197</issn><eissn>1558-1713</eissn><coden>IEJQA7</coden><abstract>To realize high-power superluminescent diodes (SLDs) emitting at the 1300-nm wavelength and to see how different structure parameters influence the device performances, three different epitaxial layers have been studied. 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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Capacitive sensors Devices Electronics Emittance Epitaxial layers Exact sciences and technology Gyroscopes Optical coupling Optical fiber devices Optoelectronic devices Power generation Quantum electronics Quantum well devices Quantum wells Ripples Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor optical amplifiers Superluminescent diodes Wavelength division multiplexing Wavelengths |
| title | Design and realization of high-power ripple-free superluminescent diodes at 1300 nm |
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