High-power and low-divergence 980-nm InGaAs-GaAsP-AlGaAs strain-compensated quantum-well diode laser grown by MOCVD
High-power InGaAs-GaAsP-AlGaAs strain-compensated separate-confinement heterostructure double quantum-well lasers emitting at 980-nm wavelength have been grown by low-pressure metal-organic epitaxial chemical vapor deposition. Fabricated with a ridge waveguide, the lasers achieved an output power of...
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| Veröffentlicht in: | IEEE photonics technology letters 2003-11, Vol.15 (11), p.1507-1509 |
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| container_title | IEEE photonics technology letters |
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| creator | Jun Zhao Li, L. Wumin Wang Yicheng Lu |
| description | High-power InGaAs-GaAsP-AlGaAs strain-compensated separate-confinement heterostructure double quantum-well lasers emitting at 980-nm wavelength have been grown by low-pressure metal-organic epitaxial chemical vapor deposition. Fabricated with a ridge waveguide, the lasers achieved an output power of 386 mW in the fundamental lateral mode without any kink being observed. By optimizing the laser structure parameters, a very low transverse beam divergence of 22.1/spl deg/ and a high slope efficiency of up to 0.89 mW/mA were obtained. The narrow transverse far field enables an output power of over 290 mW to be coupled into a single-mode fiber with a high coupling efficiency of 83.2% at 430 mA. Life testing at various powers shows excellent long-term reliability after 3500 h. |
| doi_str_mv | 10.1109/LPT.2003.818660 |
| format | Article |
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Fabricated with a ridge waveguide, the lasers achieved an output power of 386 mW in the fundamental lateral mode without any kink being observed. By optimizing the laser structure parameters, a very low transverse beam divergence of 22.1/spl deg/ and a high slope efficiency of up to 0.89 mW/mA were obtained. The narrow transverse far field enables an output power of over 290 mW to be coupled into a single-mode fiber with a high coupling efficiency of 83.2% at 430 mA. Life testing at various powers shows excellent long-term reliability after 3500 h.</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/LPT.2003.818660</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Beams (radiation) ; Chemical lasers ; Chemical vapor deposition ; Diode lasers ; Epitaxial growth ; Far fields ; Fiber lasers ; Laser modes ; Lasers ; MOCVD ; Optimization ; Power generation ; Power lasers ; Quantum well lasers ; Quantum wells ; Ridges ; Waveguide lasers ; Wavelengths</subject><ispartof>IEEE photonics technology letters, 2003-11, Vol.15 (11), p.1507-1509</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2003</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c349t-31ce53760df0e8e748ca03c208d7b8624e6676fcc112cca086db4318ad04da553</citedby><cites>FETCH-LOGICAL-c349t-31ce53760df0e8e748ca03c208d7b8624e6676fcc112cca086db4318ad04da553</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1237570$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1237570$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Jun Zhao</creatorcontrib><creatorcontrib>Li, L.</creatorcontrib><creatorcontrib>Wumin Wang</creatorcontrib><creatorcontrib>Yicheng Lu</creatorcontrib><title>High-power and low-divergence 980-nm InGaAs-GaAsP-AlGaAs strain-compensated quantum-well diode laser grown by MOCVD</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>High-power InGaAs-GaAsP-AlGaAs strain-compensated separate-confinement heterostructure double quantum-well lasers emitting at 980-nm wavelength have been grown by low-pressure metal-organic epitaxial chemical vapor deposition. Fabricated with a ridge waveguide, the lasers achieved an output power of 386 mW in the fundamental lateral mode without any kink being observed. By optimizing the laser structure parameters, a very low transverse beam divergence of 22.1/spl deg/ and a high slope efficiency of up to 0.89 mW/mA were obtained. The narrow transverse far field enables an output power of over 290 mW to be coupled into a single-mode fiber with a high coupling efficiency of 83.2% at 430 mA. Life testing at various powers shows excellent long-term reliability after 3500 h.</description><subject>Beams (radiation)</subject><subject>Chemical lasers</subject><subject>Chemical vapor deposition</subject><subject>Diode lasers</subject><subject>Epitaxial growth</subject><subject>Far fields</subject><subject>Fiber lasers</subject><subject>Laser modes</subject><subject>Lasers</subject><subject>MOCVD</subject><subject>Optimization</subject><subject>Power generation</subject><subject>Power lasers</subject><subject>Quantum well lasers</subject><subject>Quantum wells</subject><subject>Ridges</subject><subject>Waveguide lasers</subject><subject>Wavelengths</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kc1vEzEQxVcIJErhzIGLxQFOTmfWXq_3GKX0QwpqD4Wr5diTsNWundq7RP3vcZRKSBy4zDxpfvM0o1dVHxEWiNBdrO8fFjWAWGjUSsGr6gw7iRywla-LhqIRRfO2epfzIwDKRsizKt_0u198Hw-UmA2eDfHAff-b0o6CI9Zp4GFkt-HaLjM_lnu-HI6d5SnZPnAXxz2FbCfy7Gm2YZpHfqBhYL6Pnthgc3HepXgIbPPMvt-tfl6-r95s7ZDpw0s_r35cfXtY3fD13fXtarnmTshu4gIdNaJV4LdAmlqpnQXhatC-3WhVS1KqVVvnEGtXRlr5jRSorQfpbdOI8-rryXef4tNMeTJjn125zQaKczYdoNIohCrkl_-StRYoZIMF_PwP-BjnFMoXRmtZC901XYEuTpBLMedEW7NP_WjTs0Ewx6xMycocszKnrMrGp9NGT0R_6Vq0TQviD1sVjfY</recordid><startdate>20031101</startdate><enddate>20031101</enddate><creator>Jun Zhao</creator><creator>Li, L.</creator><creator>Wumin Wang</creator><creator>Yicheng Lu</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>7QQ</scope><scope>F28</scope><scope>FR3</scope><scope>H8D</scope><scope>JG9</scope></search><sort><creationdate>20031101</creationdate><title>High-power and low-divergence 980-nm InGaAs-GaAsP-AlGaAs strain-compensated quantum-well diode laser grown by MOCVD</title><author>Jun Zhao ; Li, L. ; Wumin Wang ; Yicheng Lu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c349t-31ce53760df0e8e748ca03c208d7b8624e6676fcc112cca086db4318ad04da553</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Beams (radiation)</topic><topic>Chemical lasers</topic><topic>Chemical vapor deposition</topic><topic>Diode lasers</topic><topic>Epitaxial growth</topic><topic>Far fields</topic><topic>Fiber lasers</topic><topic>Laser modes</topic><topic>Lasers</topic><topic>MOCVD</topic><topic>Optimization</topic><topic>Power generation</topic><topic>Power lasers</topic><topic>Quantum well lasers</topic><topic>Quantum wells</topic><topic>Ridges</topic><topic>Waveguide lasers</topic><topic>Wavelengths</topic><toplevel>online_resources</toplevel><creatorcontrib>Jun Zhao</creatorcontrib><creatorcontrib>Li, L.</creatorcontrib><creatorcontrib>Wumin Wang</creatorcontrib><creatorcontrib>Yicheng Lu</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jun Zhao</au><au>Li, L.</au><au>Wumin Wang</au><au>Yicheng Lu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-power and low-divergence 980-nm InGaAs-GaAsP-AlGaAs strain-compensated quantum-well diode laser grown by MOCVD</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>2003-11-01</date><risdate>2003</risdate><volume>15</volume><issue>11</issue><spage>1507</spage><epage>1509</epage><pages>1507-1509</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>High-power InGaAs-GaAsP-AlGaAs strain-compensated separate-confinement heterostructure double quantum-well lasers emitting at 980-nm wavelength have been grown by low-pressure metal-organic epitaxial chemical vapor deposition. Fabricated with a ridge waveguide, the lasers achieved an output power of 386 mW in the fundamental lateral mode without any kink being observed. By optimizing the laser structure parameters, a very low transverse beam divergence of 22.1/spl deg/ and a high slope efficiency of up to 0.89 mW/mA were obtained. The narrow transverse far field enables an output power of over 290 mW to be coupled into a single-mode fiber with a high coupling efficiency of 83.2% at 430 mA. Life testing at various powers shows excellent long-term reliability after 3500 h.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LPT.2003.818660</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 1041-1135 |
| ispartof | IEEE photonics technology letters, 2003-11, Vol.15 (11), p.1507-1509 |
| issn | 1041-1135 1941-0174 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Beams (radiation) Chemical lasers Chemical vapor deposition Diode lasers Epitaxial growth Far fields Fiber lasers Laser modes Lasers MOCVD Optimization Power generation Power lasers Quantum well lasers Quantum wells Ridges Waveguide lasers Wavelengths |
| title | High-power and low-divergence 980-nm InGaAs-GaAsP-AlGaAs strain-compensated quantum-well diode laser grown by MOCVD |
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