Density functional calculation for growth of GaN on graphite as 3D growth on 2D material

Density functional calculation for growth of GaN on graphite as 3D growth on 2D material

The density functional calculation is performed to determine the structure of the grown GaN film on graphite substrate for comparison with experimental results using pulsed laser deposition method. The predicted result for polarity of the grown GaN is the nitrogen‐terminated face, (0001) and it agre...

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Veröffentlicht in:Physica status solidi. C 2011-05, Vol.8 (5), p.1585-1588
Hauptverfasser: Ishii, Akira, Tatani, Takaaki, Nakada, Kengo
Format: Artikel
Sprache:eng
Schlagworte:
Density
density functional calculation
Gallium nitrides
GaN film
Graphite
growth
Mathematical analysis
Polarity
Solid state physics
structure
Three dimensional
Two dimensional
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creator Ishii, Akira
Tatani, Takaaki
Nakada, Kengo
description The density functional calculation is performed to determine the structure of the grown GaN film on graphite substrate for comparison with experimental results using pulsed laser deposition method. The predicted result for polarity of the grown GaN is the nitrogen‐terminated face, (0001) and it agrees with experiment. Since graphite is the 2 dimensional material having very weak interaction between layers, graphite is considered to be an ideal lattice mismatch free substrate for heteroepitaxial growth. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
doi_str_mv 10.1002/pssc.201000918
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subjects Density
density functional calculation
Gallium nitrides
GaN film
Graphite
growth
Mathematical analysis
Polarity
Solid state physics
structure
Three dimensional
Two dimensional
title Density functional calculation for growth of GaN on graphite as 3D growth on 2D material
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