A fully matched N-way Doherty amplifier with optimized linearity
This paper presents a new fully matched N-way Doherty amplifier. The basic principles of operation and important features are described. For the experimental verification, 2.14-GHz Doherty amplifiers having two-, three-, and four-way structures are implemented using silicon LDMOSFETs and tested usin...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2003-03, Vol.51 (3), p.986-993 |
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| container_end_page | 993 |
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| container_issue | 3 |
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| container_title | IEEE transactions on microwave theory and techniques |
| container_volume | 51 |
| creator | Yang, Youngoo Cha, Jeonghyeon Shin, Bumjae Kim, Bumman |
| description | This paper presents a new fully matched N-way Doherty amplifier. The basic principles of operation and important features are described. For the experimental verification, 2.14-GHz Doherty amplifiers having two-, three-, and four-way structures are implemented using silicon LDMOSFETs and tested using down-link WCDMA signal. The linearity performances of the two-, three-, and four-way Doherty amplifiers are optimized for better efficiency versus linearity by a bias adjustment of the peaking amplifiers. For simultaneously improving the efficiency and linearity to achieve maximum efficiency versus linearity, the gate biases of the peaking amplifiers for the N-way Doherty amplifier are optimized. As a result, the efficiency versus linearity characteristics are drastically improved by N-way extension of the Doherty amplifier. |
| doi_str_mv | 10.1109/TMTT.2003.808713 |
| format | Article |
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As a result, the efficiency versus linearity characteristics are drastically improved by N-way extension of the Doherty amplifier.</description><subject>Amplification</subject><subject>Amplifiers</subject><subject>Base stations</subject><subject>Bias</subject><subject>Circuits</subject><subject>Costs</subject><subject>Degradation</subject><subject>Gates</subject><subject>High power amplifiers</subject><subject>Linearity</subject><subject>Microwave amplifiers</subject><subject>Microwaves</subject><subject>Multiaccess communication</subject><subject>Power amplifiers</subject><subject>Power generation</subject><subject>Silicon</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp90E1LxDAQBuAgCq6rd8FL8aCnrpMmTTM3Zf2EVS_1HNI2ZbO025q0LPXX26WC4MHTMPC8A_MSck5hQSngTfqaposIgC0kyISyAzKjcZyEKBI4JDMAKkPkEo7JifebceUxyBm5vQvKvqqGoNZdvjZF8Bbu9BDcN2vjuiHQdVvZ0hoX7Gy3Dpq2s7X9Glllt0Y72w2n5KjUlTdnP3NOPh4f0uVzuHp_elnercKcxbQLC8gKSKJcYCQoLeK4wJxzLITgqDHXJhGMF0UJGTdGZzzTwDCWgBEXOdCMzcn1dLd1zWdvfKdq63NTVXprmt4rBCoS5AmO8upfGckIAQUb4eUfuGl6tx2_UFJyxgWCGBFMKHeN986UqnW21m5QFNS-ebVvXu2bV1PzY-RiilhjzC-nSJNYsm8J0X4G</recordid><startdate>20030301</startdate><enddate>20030301</enddate><creator>Yang, Youngoo</creator><creator>Cha, Jeonghyeon</creator><creator>Shin, Bumjae</creator><creator>Kim, Bumman</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| source | IEEE Electronic Library (IEL) |
| subjects | Amplification Amplifiers Base stations Bias Circuits Costs Degradation Gates High power amplifiers Linearity Microwave amplifiers Microwaves Multiaccess communication Power amplifiers Power generation Silicon |
| title | A fully matched N-way Doherty amplifier with optimized linearity |
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