Atomic layer epitaxy of AlGaN

Atomic layer epitaxy of AlGaN with an average growth rate of as high as 4.5 mm/h has been achieved by the high‐speed switching‐valves (HSSVs) technique in a raised‐pressure metalorganic vapor phase epitaxy system. Regarding the duration of group III metalorganics and NH3 gases input, 0.1 second for...

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Veröffentlicht in:	Physica status solidi. C 2010-10, Vol.7 (10), p.2368-2370
Hauptverfasser:	Nagamatsu, Kentaro, Iida, Daisuke, Takeda, Kenichiro, Nagata, Kensuke, Asai, Toshiaki, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaN Aluminum gallium nitrides Atomic layer epitaxy Carrier gases growth High speed Metalorganic vapor phase epitaxy Monolayers MOVPE Reproduction Solid state physics
Online-Zugang:	Volltext
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