Fine-tuning of catalytic tin nanoparticles by the reverse micelle method for direct deposition of silicon nanowires by a plasma-enhanced chemical vapour technique

Using the reverse micelle technique to fine-tune catalytic tin nanoparticles for the manufacture of silicon nanowires via the plasma-enhanced chemical vapour deposition process. [Display omitted] ► The size of the tin nanoparticles could be fined-turned (85–140 nm) using the reverse micelle technique. ► The tin nanoparticles were then used as catalytic precursors to grow silicon nanowires using the plasma-enhanced chemical vapour deposition technique. ► The silicon nanowires produced were 76 and 86 nm in diameter, curved and twisted. ► The new features of this type of nanowire have the potential to be applied to the development of new photovoltaic devices. The reverse micelle method was used for the reduction of a tin (Sn) salt solution to produce metallic Sn nanoparticles ranging from 85 nm to 140 nm in diameter. The reverse micellar system used in this process was hexane-butanol-cetyl trimethylammonium bromide (CTAB). The diameters of the Sn nanoparticles were proportional to the concentration of the aqueous Sn salt solution. Thus, the size of the Sn nanoparticles can easily be controlled, enabling a simple, reproducible mechanism for the growth of silicon nanowires (SiNWs) using plasma-enhanced chemical vapour deposition (PECVD). Both the Sn nanoparticles and silicon nanowires were characterised using field-emission scanning electron microscopy (FE-SEM). Further characterisations of the SiNW’s were made using transmission electron microscopy (TEM), atomic force microscopy (AFM) and Raman spectroscopy. In addition, dynamic light scattering (DLS) was used to investigate particle size distributions. This procedure demonstrates an economical route for manufacturing reproducible silicon nanowires using fine-tuned Sn nanoparticles for possible solar cell applications.