Optical and theoretical investigations of V2+ ion in GaN

The infrared luminescence of vanadium‐doped gallium nitride (GaN:V) grown by metalorganic vapour phase epitaxy technique (MOVPE) on SiN‐treated sapphire substrate were examined. Two spin allowed transitions were observed at 6633 cm‐1 and 6959 cm‐1, and are respectively assigned to the 4T1(4P)→4T1(4F...

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Veröffentlicht in:	Physica status solidi. C 2011-05, Vol.8 (5), p.1616-1619
Hauptverfasser:	Souissi, Hajer, Souissi, Mnawer, Dammak, Mohamed, Chine, Zied, Kammoun, Souha, El Jani, Belgacem
Format:	Artikel
Sprache:	eng
Schlagworte:	Energy levels Gallium nitrides GaN:V Infrared Luminescence Mathematical analysis Racah parameters Reproduction Solid state physics transition-metal compounds Vapour
Online-Zugang:	Volltext
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