Influence of hydrogen dilution on surface roughness development of a-Si:H thin films grown by remote plasma deposition

Hydrogenated amorphous silicon (a‐Si:H) films are grown at different hydrogen dilutions. For high dilutions we observe a discrepancy in the surface roughness analysis between real‐time spectroscopic ellipsometry (RTSE) and atomic force microscopy (AFM) measurements. With RTSE a much higher roughness...

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Veröffentlicht in:	Physica status solidi. C 2010-04, Vol.7 (3-4), p.571-574
Hauptverfasser:	Wank, M. A., Illiberi, A., Tichelaar, F. D., van Swaaij, R. A. C. M. M., van de Sanden, M. C. M., Zeman, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	68.35.Ct 68.37.Ps 78.20.Ci 81.05.Gc 81.15.Aa 81.15.Gh Atomic force microscopy Etching Hydrides Hydrogen storage Reproduction Roughening Roughness Surface roughness Thin films
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