III-V/silicon photonics for on-chip and intra-chip optical interconnects
In this paper III‐V on silicon‐on‐insulator (SOI) heterogeneous integration is reviewed for the realization of near infrared light sources on a silicon waveguide platform, suitable for inter‐chip and intra‐chip optical interconnects. Two bonding technologies are used to realize the III‐V/SOI integra...
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| Veröffentlicht in: | Laser & photonics reviews 2010-11, Vol.4 (6), p.751-779 |
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| container_title | Laser & photonics reviews |
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| creator | Roelkens, G. Liu, L. Liang, D. Jones, R. Fang, A. Koch, B. Bowers, J. |
| description | In this paper III‐V on silicon‐on‐insulator (SOI) heterogeneous integration is reviewed for the realization of near infrared light sources on a silicon waveguide platform, suitable for inter‐chip and intra‐chip optical interconnects. Two bonding technologies are used to realize the III‐V/SOI integration: one based on molecular wafer bonding and the other based on DVS‐BCB adhesive wafer bonding. The realization of micro‐disk lasers, Fabry‐Perot lasers, DFB lasers, DBR lasers and mode‐locked lasers on the III‐V/SOI material platform is discussed.
III‐V on silicon‐on‐insulator (SOI) heterogeneous integration are reviewed for the realization of near infrared light sources on a silicon waveguide platform, suitable for inter‐chip and intra‐chip optical interconnects. Two bonding technologies are used to realize the III‐V/SOI integration: one based on molecular wafer bonding and the other based on DVS‐BCB (divinylsiloxane‐bis‐benzocyclobutene) adhesive wafer bonding. The realization of micro‐disk lasers, Fabry‐Perot lasers, distributed feedback lasers, distributed Bragg reflector lasers and modelocked lasers on the III‐V/SOI material platform is discussed. |
| doi_str_mv | 10.1002/lpor.200900033 |
| format | Article |
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III‐V on silicon‐on‐insulator (SOI) heterogeneous integration are reviewed for the realization of near infrared light sources on a silicon waveguide platform, suitable for inter‐chip and intra‐chip optical interconnects. Two bonding technologies are used to realize the III‐V/SOI integration: one based on molecular wafer bonding and the other based on DVS‐BCB (divinylsiloxane‐bis‐benzocyclobutene) adhesive wafer bonding. The realization of micro‐disk lasers, Fabry‐Perot lasers, distributed feedback lasers, distributed Bragg reflector lasers and modelocked lasers on the III‐V/SOI material platform is discussed.</description><identifier>ISSN: 1863-8880</identifier><identifier>ISSN: 1863-8899</identifier><identifier>EISSN: 1863-8899</identifier><identifier>DOI: 10.1002/lpor.200900033</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>Adhesive bonding ; III-V photonics ; Infrared ; Lasers ; optical interconnect ; Optical interconnects ; Photonics ; Platforms ; Silicon ; Silicon photonics ; wafer bonding ; Wafers</subject><ispartof>Laser & photonics reviews, 2010-11, Vol.4 (6), p.751-779</ispartof><rights>Copyright © 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4123-4259940aca16090f55e2907d2dab7e98f79b787c16c895c2590b079c2e8b63c13</citedby><cites>FETCH-LOGICAL-c4123-4259940aca16090f55e2907d2dab7e98f79b787c16c895c2590b079c2e8b63c13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Flpor.200900033$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Flpor.200900033$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>315,782,786,1419,27933,27934,45583,45584</link.rule.ids></links><search><creatorcontrib>Roelkens, G.</creatorcontrib><creatorcontrib>Liu, L.</creatorcontrib><creatorcontrib>Liang, D.</creatorcontrib><creatorcontrib>Jones, R.</creatorcontrib><creatorcontrib>Fang, A.</creatorcontrib><creatorcontrib>Koch, B.</creatorcontrib><creatorcontrib>Bowers, J.</creatorcontrib><title>III-V/silicon photonics for on-chip and intra-chip optical interconnects</title><title>Laser & photonics reviews</title><addtitle>Laser & Photon. Rev</addtitle><description>In this paper III‐V on silicon‐on‐insulator (SOI) heterogeneous integration is reviewed for the realization of near infrared light sources on a silicon waveguide platform, suitable for inter‐chip and intra‐chip optical interconnects. Two bonding technologies are used to realize the III‐V/SOI integration: one based on molecular wafer bonding and the other based on DVS‐BCB adhesive wafer bonding. The realization of micro‐disk lasers, Fabry‐Perot lasers, DFB lasers, DBR lasers and mode‐locked lasers on the III‐V/SOI material platform is discussed.
III‐V on silicon‐on‐insulator (SOI) heterogeneous integration are reviewed for the realization of near infrared light sources on a silicon waveguide platform, suitable for inter‐chip and intra‐chip optical interconnects. Two bonding technologies are used to realize the III‐V/SOI integration: one based on molecular wafer bonding and the other based on DVS‐BCB (divinylsiloxane‐bis‐benzocyclobutene) adhesive wafer bonding. The realization of micro‐disk lasers, Fabry‐Perot lasers, distributed feedback lasers, distributed Bragg reflector lasers and modelocked lasers on the III‐V/SOI material platform is discussed.</description><subject>Adhesive bonding</subject><subject>III-V photonics</subject><subject>Infrared</subject><subject>Lasers</subject><subject>optical interconnect</subject><subject>Optical interconnects</subject><subject>Photonics</subject><subject>Platforms</subject><subject>Silicon</subject><subject>Silicon photonics</subject><subject>wafer bonding</subject><subject>Wafers</subject><issn>1863-8880</issn><issn>1863-8899</issn><issn>1863-8899</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqFkD1PwzAQhiMEEqWwMmdjSnu2E3-MKEAbqYIK8TFajuuohjQOdirovydVUMXWW-5sPc_p9EbRNYIJAsDTunV-ggEEABByEo0QpyThXIjTw8zhPLoI4QMg64uOonlRFMnbNNjaatfE7dp1rrE6xJXzsWsSvbZtrJpVbJvOq-Hp2s5qVe-_jO-txuguXEZnlaqDufrr4-j14f4lnyeLp1mR3y4SnSJMkhRnQqSgtEK0v7TKMoMFsBVeqZIZwSsmSsaZRlRzkemehhKY0NjwkhKNyDi6Gfa23n1tTejkxgZt6lo1xm2DFIAowwKnR0kuKO4xznpyMpDauxC8qWTr7Ub5nUQg99nKfbbykG0viEH4trXZHaHlYvn0_N9NBteGzvwcXOU_JWWEZfL9cSZztMzpHTBJyS92NIuI</recordid><startdate>201011</startdate><enddate>201011</enddate><creator>Roelkens, G.</creator><creator>Liu, L.</creator><creator>Liang, D.</creator><creator>Jones, R.</creator><creator>Fang, A.</creator><creator>Koch, B.</creator><creator>Bowers, J.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>201011</creationdate><title>III-V/silicon photonics for on-chip and intra-chip optical interconnects</title><author>Roelkens, G. ; Liu, L. ; Liang, D. ; Jones, R. ; Fang, A. ; Koch, B. ; Bowers, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4123-4259940aca16090f55e2907d2dab7e98f79b787c16c895c2590b079c2e8b63c13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Adhesive bonding</topic><topic>III-V photonics</topic><topic>Infrared</topic><topic>Lasers</topic><topic>optical interconnect</topic><topic>Optical interconnects</topic><topic>Photonics</topic><topic>Platforms</topic><topic>Silicon</topic><topic>Silicon photonics</topic><topic>wafer bonding</topic><topic>Wafers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Roelkens, G.</creatorcontrib><creatorcontrib>Liu, L.</creatorcontrib><creatorcontrib>Liang, D.</creatorcontrib><creatorcontrib>Jones, R.</creatorcontrib><creatorcontrib>Fang, A.</creatorcontrib><creatorcontrib>Koch, B.</creatorcontrib><creatorcontrib>Bowers, J.</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Laser & photonics reviews</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Roelkens, G.</au><au>Liu, L.</au><au>Liang, D.</au><au>Jones, R.</au><au>Fang, A.</au><au>Koch, B.</au><au>Bowers, J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>III-V/silicon photonics for on-chip and intra-chip optical interconnects</atitle><jtitle>Laser & photonics reviews</jtitle><addtitle>Laser & Photon. Rev</addtitle><date>2010-11</date><risdate>2010</risdate><volume>4</volume><issue>6</issue><spage>751</spage><epage>779</epage><pages>751-779</pages><issn>1863-8880</issn><issn>1863-8899</issn><eissn>1863-8899</eissn><abstract>In this paper III‐V on silicon‐on‐insulator (SOI) heterogeneous integration is reviewed for the realization of near infrared light sources on a silicon waveguide platform, suitable for inter‐chip and intra‐chip optical interconnects. Two bonding technologies are used to realize the III‐V/SOI integration: one based on molecular wafer bonding and the other based on DVS‐BCB adhesive wafer bonding. The realization of micro‐disk lasers, Fabry‐Perot lasers, DFB lasers, DBR lasers and mode‐locked lasers on the III‐V/SOI material platform is discussed.
III‐V on silicon‐on‐insulator (SOI) heterogeneous integration are reviewed for the realization of near infrared light sources on a silicon waveguide platform, suitable for inter‐chip and intra‐chip optical interconnects. Two bonding technologies are used to realize the III‐V/SOI integration: one based on molecular wafer bonding and the other based on DVS‐BCB (divinylsiloxane‐bis‐benzocyclobutene) adhesive wafer bonding. The realization of micro‐disk lasers, Fabry‐Perot lasers, distributed feedback lasers, distributed Bragg reflector lasers and modelocked lasers on the III‐V/SOI material platform is discussed.</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/lpor.200900033</doi><tpages>29</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1863-8880 |
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| issn | 1863-8880 1863-8899 1863-8899 |
| language | eng |
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| source | Wiley Online Library - AutoHoldings Journals |
| subjects | Adhesive bonding III-V photonics Infrared Lasers optical interconnect Optical interconnects Photonics Platforms Silicon Silicon photonics wafer bonding Wafers |
| title | III-V/silicon photonics for on-chip and intra-chip optical interconnects |
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