Mask line roughness contribution in EUV lithography

In this paper, mask line edge roughness contribution to the final resist roughness is studied. For this purpose, dedicated line and space modules were designed. Both correlated and anticorrelated edge modulations were considered. For each modulation type, frequency and amplitude were varied. Two pit...

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Veröffentlicht in:	Microelectronic engineering 2011-08, Vol.88 (8), p.2167-2170
Hauptverfasser:	Vaglio Pret, Alessandro, Gronheid, Roel
Format:	Artikel
Sprache:	eng
Schlagworte:	Aerial image Applied sciences Circuit properties Density Electric, optical and optoelectronic circuits Electronic circuits Electronics EUV Exact sciences and technology Fractures Frequency filters Line edge/width roughness Low frequencies Masks Mechanical properties and methods of testing. Rheology. Fracture mechanics. Tribology Metals. Metallurgy Microelectronic fabrication (materials and surfaces technology) Modulation Resists Roughness Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Spatial frequency analysis
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