Carrier dynamics in (ZnMg)O alloy materials

Carrier dynamics in (ZnMg)O alloy materials

Carrier recombination dynamics in Zn1–xMgxO alloys were studied by time‐resolved photoluminescence as function of Mg concentration and lattice temperature for different emission and excitation energies. Disorder and carrier localization effects are found to play a significant role, becoming increasi...

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Veröffentlicht in:Physica status solidi. C 2011-04, Vol.8 (4), p.1149-1152
Hauptverfasser: Chernikov, Alexej, Horst, Swantje, Koch, Martin, Volz, Kerstin, Chatterjee, Sangam, Koch, Stephan W., Wassner, Thomas A., Laumer, Bernhard, Eickhoff, Martin
Format: Artikel
Sprache:eng
Schlagworte:
carrier dynamics
Carrier recombination
disorder
Dynamic tests
Dynamics
Emission analysis
Localization
Magnesium
Position (location)
semiconductors
Solid state physics
time-resolved photoluminescence
ZnMgO
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Zusammenfassung:Carrier recombination dynamics in Zn1–xMgxO alloys were studied by time‐resolved photoluminescence as function of Mg concentration and lattice temperature for different emission and excitation energies. Disorder and carrier localization effects are found to play a significant role, becoming increasingly important for lower temperatures and higher Mg concentrations. Emission energy dependent dynamics were analyzed by the application of a theoretical model, yielding a characteristic localization energy of 60 ± 15 meV for the sample with the highest Mg concentration of x = 0.21. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6351
1610-1642
1610-1642
DOI:10.1002/pssc.201000859