Recent advances in Ge/Si PIN and APD photodetectors
Photodetectors on a Si platform are important because of the opportunity to manufacture literally millions of photodetectors per wafer and because the use of a mature CMOS (Complementary Metal‐Oxide‐Semiconductor) process results in low cost and high uniformity. In this paper, we review recent resul...
Gespeichert in:
| Veröffentlicht in: | Physica status solidi. C 2010-10, Vol.7 (10), p.2526-2531 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 2531 |
|---|---|
| container_issue | 10 |
| container_start_page | 2526 |
| container_title | Physica status solidi. C |
| container_volume | 7 |
| creator | Bowers, John E. Ramaswamy, Anand Dai, Daoxin Zaoui, Wissem Sfar Kang, Yimin Yin, Tao Morse, Mike |
| description | Photodetectors on a Si platform are important because of the opportunity to manufacture literally millions of photodetectors per wafer and because the use of a mature CMOS (Complementary Metal‐Oxide‐Semiconductor) process results in low cost and high uniformity. In this paper, we review recent results on Ge‐Si‐based PIN‐type photodetectors and avalanche photodetectors (APD). We show several exciting advantages of SiGe photodetectors namely, the higher thermal conductivity of Si and Ge, resulting in higher power capability, and the lower k factor, resulting in higher gain bandwidth products in APDs (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| doi_str_mv | 10.1002/pssc.200983875 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_901664015</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>901664015</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3995-8d1a9bb652e6b82ea7cc688cc50b91d85a158070fcb443fd412ac937ec3aac553</originalsourceid><addsrcrecordid>eNqFkD1PwzAQQC0EEqWwMmdjSmvHsWOPVYBSVEpF-Rgt53IRgTQJcQr035MqqGJjuhveO-keIeeMjhilwbh2DkYBpVpxFYkDMmCSUZ_JMDjsdiUDX3LBjsmJc2-UckGZHBD-gIBl69n005aAzstLb4rjVe4tZwvPlqk3WV569WvVVim2CG3VuFNylNnC4dnvHJKn66vH-Maf309n8WTuA9da-CplVieJFAHKRAVoIwCpFICgiWapEpYJRSOaQRKGPEtDFljQPELg1oIQfEgu-rt1U31s0LVmnTvAorAlVhtndPeBDCnbkaOehKZyrsHM1E2-ts3WMGp2ccwujtnH6QTdC195gdt_aLNcreK_rt-7uWvxe-_a5t3IiHf4y2JqBOd31yy-Nc_8B4g4doA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>901664015</pqid></control><display><type>article</type><title>Recent advances in Ge/Si PIN and APD photodetectors</title><source>Wiley Journals</source><creator>Bowers, John E. ; Ramaswamy, Anand ; Dai, Daoxin ; Zaoui, Wissem Sfar ; Kang, Yimin ; Yin, Tao ; Morse, Mike</creator><creatorcontrib>Bowers, John E. ; Ramaswamy, Anand ; Dai, Daoxin ; Zaoui, Wissem Sfar ; Kang, Yimin ; Yin, Tao ; Morse, Mike</creatorcontrib><description>Photodetectors on a Si platform are important because of the opportunity to manufacture literally millions of photodetectors per wafer and because the use of a mature CMOS (Complementary Metal‐Oxide‐Semiconductor) process results in low cost and high uniformity. In this paper, we review recent results on Ge‐Si‐based PIN‐type photodetectors and avalanche photodetectors (APD). We show several exciting advantages of SiGe photodetectors namely, the higher thermal conductivity of Si and Ge, resulting in higher power capability, and the lower k factor, resulting in higher gain bandwidth products in APDs (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><identifier>ISSN: 1862-6351</identifier><identifier>ISSN: 1610-1642</identifier><identifier>EISSN: 1610-1642</identifier><identifier>DOI: 10.1002/pssc.200983875</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>Avalanches ; design ; Ge/Si ; Germanium ; k factors ; p-i-n junctions ; Photodetectors ; Reproduction ; Silicon ; Silicon germanides ; Thermal conductivity</subject><ispartof>Physica status solidi. C, 2010-10, Vol.7 (10), p.2526-2531</ispartof><rights>Copyright © 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3995-8d1a9bb652e6b82ea7cc688cc50b91d85a158070fcb443fd412ac937ec3aac553</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssc.200983875$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssc.200983875$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids></links><search><creatorcontrib>Bowers, John E.</creatorcontrib><creatorcontrib>Ramaswamy, Anand</creatorcontrib><creatorcontrib>Dai, Daoxin</creatorcontrib><creatorcontrib>Zaoui, Wissem Sfar</creatorcontrib><creatorcontrib>Kang, Yimin</creatorcontrib><creatorcontrib>Yin, Tao</creatorcontrib><creatorcontrib>Morse, Mike</creatorcontrib><title>Recent advances in Ge/Si PIN and APD photodetectors</title><title>Physica status solidi. C</title><addtitle>Phys. Status Solidi (c)</addtitle><description>Photodetectors on a Si platform are important because of the opportunity to manufacture literally millions of photodetectors per wafer and because the use of a mature CMOS (Complementary Metal‐Oxide‐Semiconductor) process results in low cost and high uniformity. In this paper, we review recent results on Ge‐Si‐based PIN‐type photodetectors and avalanche photodetectors (APD). We show several exciting advantages of SiGe photodetectors namely, the higher thermal conductivity of Si and Ge, resulting in higher power capability, and the lower k factor, resulting in higher gain bandwidth products in APDs (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><subject>Avalanches</subject><subject>design</subject><subject>Ge/Si</subject><subject>Germanium</subject><subject>k factors</subject><subject>p-i-n junctions</subject><subject>Photodetectors</subject><subject>Reproduction</subject><subject>Silicon</subject><subject>Silicon germanides</subject><subject>Thermal conductivity</subject><issn>1862-6351</issn><issn>1610-1642</issn><issn>1610-1642</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqFkD1PwzAQQC0EEqWwMmdjSmvHsWOPVYBSVEpF-Rgt53IRgTQJcQr035MqqGJjuhveO-keIeeMjhilwbh2DkYBpVpxFYkDMmCSUZ_JMDjsdiUDX3LBjsmJc2-UckGZHBD-gIBl69n005aAzstLb4rjVe4tZwvPlqk3WV569WvVVim2CG3VuFNylNnC4dnvHJKn66vH-Maf309n8WTuA9da-CplVieJFAHKRAVoIwCpFICgiWapEpYJRSOaQRKGPEtDFljQPELg1oIQfEgu-rt1U31s0LVmnTvAorAlVhtndPeBDCnbkaOehKZyrsHM1E2-ts3WMGp2ccwujtnH6QTdC195gdt_aLNcreK_rt-7uWvxe-_a5t3IiHf4y2JqBOd31yy-Nc_8B4g4doA</recordid><startdate>201010</startdate><enddate>201010</enddate><creator>Bowers, John E.</creator><creator>Ramaswamy, Anand</creator><creator>Dai, Daoxin</creator><creator>Zaoui, Wissem Sfar</creator><creator>Kang, Yimin</creator><creator>Yin, Tao</creator><creator>Morse, Mike</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>201010</creationdate><title>Recent advances in Ge/Si PIN and APD photodetectors</title><author>Bowers, John E. ; Ramaswamy, Anand ; Dai, Daoxin ; Zaoui, Wissem Sfar ; Kang, Yimin ; Yin, Tao ; Morse, Mike</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3995-8d1a9bb652e6b82ea7cc688cc50b91d85a158070fcb443fd412ac937ec3aac553</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Avalanches</topic><topic>design</topic><topic>Ge/Si</topic><topic>Germanium</topic><topic>k factors</topic><topic>p-i-n junctions</topic><topic>Photodetectors</topic><topic>Reproduction</topic><topic>Silicon</topic><topic>Silicon germanides</topic><topic>Thermal conductivity</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bowers, John E.</creatorcontrib><creatorcontrib>Ramaswamy, Anand</creatorcontrib><creatorcontrib>Dai, Daoxin</creatorcontrib><creatorcontrib>Zaoui, Wissem Sfar</creatorcontrib><creatorcontrib>Kang, Yimin</creatorcontrib><creatorcontrib>Yin, Tao</creatorcontrib><creatorcontrib>Morse, Mike</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica status solidi. C</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bowers, John E.</au><au>Ramaswamy, Anand</au><au>Dai, Daoxin</au><au>Zaoui, Wissem Sfar</au><au>Kang, Yimin</au><au>Yin, Tao</au><au>Morse, Mike</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Recent advances in Ge/Si PIN and APD photodetectors</atitle><jtitle>Physica status solidi. C</jtitle><addtitle>Phys. Status Solidi (c)</addtitle><date>2010-10</date><risdate>2010</risdate><volume>7</volume><issue>10</issue><spage>2526</spage><epage>2531</epage><pages>2526-2531</pages><issn>1862-6351</issn><issn>1610-1642</issn><eissn>1610-1642</eissn><abstract>Photodetectors on a Si platform are important because of the opportunity to manufacture literally millions of photodetectors per wafer and because the use of a mature CMOS (Complementary Metal‐Oxide‐Semiconductor) process results in low cost and high uniformity. In this paper, we review recent results on Ge‐Si‐based PIN‐type photodetectors and avalanche photodetectors (APD). We show several exciting advantages of SiGe photodetectors namely, the higher thermal conductivity of Si and Ge, resulting in higher power capability, and the lower k factor, resulting in higher gain bandwidth products in APDs (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssc.200983875</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1862-6351 |
| ispartof | Physica status solidi. C, 2010-10, Vol.7 (10), p.2526-2531 |
| issn | 1862-6351 1610-1642 1610-1642 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_901664015 |
| source | Wiley Journals |
| subjects | Avalanches design Ge/Si Germanium k factors p-i-n junctions Photodetectors Reproduction Silicon Silicon germanides Thermal conductivity |
| title | Recent advances in Ge/Si PIN and APD photodetectors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T05%3A37%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Recent%20advances%20in%20Ge/Si%20PIN%20and%20APD%20photodetectors&rft.jtitle=Physica%20status%20solidi.%20C&rft.au=Bowers,%20John%20E.&rft.date=2010-10&rft.volume=7&rft.issue=10&rft.spage=2526&rft.epage=2531&rft.pages=2526-2531&rft.issn=1862-6351&rft.eissn=1610-1642&rft_id=info:doi/10.1002/pssc.200983875&rft_dat=%3Cproquest_cross%3E901664015%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=901664015&rft_id=info:pmid/&rfr_iscdi=true |