Broadband light source using modulated quantum dot structures with sandwiched sub-nano separator (SSNS) technique

A broadband light source for a wavelength range of around 1.2‐1.3 μm can be fabricated using a multi‐stacked and modulated InAs/InGaAs quantum dot (QD) structure with the sandwich sub‐nano separator (SSNS) technique. These techniques, such as use of the modulated QD structure and SSNS structure, are...

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Veröffentlicht in:Physica status solidi. C 2011-02, Vol.8 (2), p.328-330
Hauptverfasser: Yamamoto, Naokatsu, Akahane, Kouichi, Kawanishi, Tetsuya, Sotobayashi, Hideyuki, Fujioka, Hiroki, Takai, Hiroshi
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container_issue 2
container_start_page 328
container_title Physica status solidi. C
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creator Yamamoto, Naokatsu
Akahane, Kouichi
Kawanishi, Tetsuya
Sotobayashi, Hideyuki
Fujioka, Hiroki
Takai, Hiroshi
description A broadband light source for a wavelength range of around 1.2‐1.3 μm can be fabricated using a multi‐stacked and modulated InAs/InGaAs quantum dot (QD) structure with the sandwich sub‐nano separator (SSNS) technique. These techniques, such as use of the modulated QD structure and SSNS structure, are considered useful in obtaining a high‐quality and ultra‐broadband QD optical gain material for the laser and/or optical amplifier. A broadband (>75 nm bandwidth) and bright (few tenths of a mW) light emission in its waveband is successfully demonstrated from a QD laser diode using a modulated QD optical gain with the SSNS technique. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
doi_str_mv 10.1002/pssc.201000476
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source Wiley Online Library Journals Frontfile Complete
subjects Amplification
Broadband
broadband optical gain
Gain
Indium gallium arsenides
infrared light source
laser
Light sources
nano-structure
quantum dot
Quantum dots
Separators
Solid state physics
title Broadband light source using modulated quantum dot structures with sandwiched sub-nano separator (SSNS) technique
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