Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes
Ge doping in Czochralski silicon (Cz‐Si) crystal has been proposed as a successful application of the so‐called “impurity engineering” leading to improved properties of Si wafers and/or devices. In an attempt to understand the beneficial effect of Ge doping on irradiation hardness for actual devices...
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| Veröffentlicht in: | Physica status solidi. C 2011-03, Vol.8 (3), p.674-677 |
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| container_title | Physica status solidi. C |
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| creator | Chen, Jiahe Vanhellemont, Jan Simoen, Eddy Lauwaert, Johan Vrielinck, Henk Rafi, Joan Marc Ohyama, Hidenori Weber, Jörg Yang, Deren |
| description | Ge doping in Czochralski silicon (Cz‐Si) crystal has been proposed as a successful application of the so‐called “impurity engineering” leading to improved properties of Si wafers and/or devices. In an attempt to understand the beneficial effect of Ge doping on irradiation hardness for actual devices, substrates and p‐on‐n diodes, both with and without Ge doping, were exposed to electron irradiation and characterized using deep level transient spectroscopy (DLTS). Our results suggest a concentration of 1019 cm–3 Ge doping has only a limited effect on the total density of vacancy related deep levels in silicon (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| doi_str_mv | 10.1002/pssc.201000142 |
| format | Article |
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In an attempt to understand the beneficial effect of Ge doping on irradiation hardness for actual devices, substrates and p‐on‐n diodes, both with and without Ge doping, were exposed to electron irradiation and characterized using deep level transient spectroscopy (DLTS). Our results suggest a concentration of 1019 cm–3 Ge doping has only a limited effect on the total density of vacancy related deep levels in silicon (© 2011 WILEY‐VCH Verlag GmbH & Co. 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KGaA, Weinheim)</description><subject>Crystal defects</subject><subject>Czochralski process</subject><subject>Czochralski silicon</subject><subject>Deep level transient spectroscopy</subject><subject>Density</subject><subject>Devices</subject><subject>Diodes</subject><subject>DLTS</subject><subject>Doping</subject><subject>Electron irradiation</subject><subject>Germanium</subject><subject>germanium doping</subject><subject>irradiation induced defect</subject><subject>Lattice vacancies</subject><subject>Silicon</subject><subject>Silicon substrates</subject><issn>1862-6351</issn><issn>1610-1642</issn><issn>1610-1642</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqNkUlPwzAQRiMEEuuVcyQOnFI8tuM0RxSxVywqy9FyvYAhTYonEZRfj6sihLjAyZ817400-pJkF8gACKEHM0Q9oCRmApyuJBsggGQgOF2NeShoJlgO68km4jMhLCcgNhJ1VFvdhbZJfQjKeNX5RW5Mr61JjXVxivGfPtowVY3vp5lpZ3FUfbT6KagaX3yKvvY6athPsAuqs5iqJtq-NRa3kzUXMbvz9W4ld8dHt9VpNro6OasOR5nmUNLMUc7ykhVDcK4oLFVFzkEZ6pQzQMHl3E4UhwmDIaElB-s4YU7ovOCqMMqxrWR_uXcW2tfeYienHrWta9XYtkdZxnsFo4z8kwRBI7n3i3xu-9DEMySUvARKRA6RGiwpHVrEYJ2cBT9VYS6ByEU1clGN_K4mCuVSePO1nf9By-vxuPrpZkvXY2ffv10VXqQoWJHLh8sTeX9Dz8cX40oS9gmxr6I2</recordid><startdate>201103</startdate><enddate>201103</enddate><creator>Chen, Jiahe</creator><creator>Vanhellemont, Jan</creator><creator>Simoen, Eddy</creator><creator>Lauwaert, Johan</creator><creator>Vrielinck, Henk</creator><creator>Rafi, Joan Marc</creator><creator>Ohyama, Hidenori</creator><creator>Weber, Jörg</creator><creator>Yang, Deren</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>201103</creationdate><title>Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes</title><author>Chen, Jiahe ; Vanhellemont, Jan ; Simoen, Eddy ; Lauwaert, Johan ; Vrielinck, Henk ; Rafi, Joan Marc ; Ohyama, Hidenori ; Weber, Jörg ; Yang, Deren</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4192-f243593781ff77e2a7541ad2fafd121f54eba41b31802941ef403f6c574a7daf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Crystal defects</topic><topic>Czochralski process</topic><topic>Czochralski silicon</topic><topic>Deep level transient spectroscopy</topic><topic>Density</topic><topic>Devices</topic><topic>Diodes</topic><topic>DLTS</topic><topic>Doping</topic><topic>Electron irradiation</topic><topic>Germanium</topic><topic>germanium doping</topic><topic>irradiation induced defect</topic><topic>Lattice vacancies</topic><topic>Silicon</topic><topic>Silicon substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Jiahe</creatorcontrib><creatorcontrib>Vanhellemont, Jan</creatorcontrib><creatorcontrib>Simoen, Eddy</creatorcontrib><creatorcontrib>Lauwaert, Johan</creatorcontrib><creatorcontrib>Vrielinck, Henk</creatorcontrib><creatorcontrib>Rafi, Joan Marc</creatorcontrib><creatorcontrib>Ohyama, Hidenori</creatorcontrib><creatorcontrib>Weber, Jörg</creatorcontrib><creatorcontrib>Yang, Deren</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica status solidi. 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Status Solidi (c)</addtitle><date>2011-03</date><risdate>2011</risdate><volume>8</volume><issue>3</issue><spage>674</spage><epage>677</epage><pages>674-677</pages><issn>1862-6351</issn><issn>1610-1642</issn><eissn>1610-1642</eissn><abstract>Ge doping in Czochralski silicon (Cz‐Si) crystal has been proposed as a successful application of the so‐called “impurity engineering” leading to improved properties of Si wafers and/or devices. In an attempt to understand the beneficial effect of Ge doping on irradiation hardness for actual devices, substrates and p‐on‐n diodes, both with and without Ge doping, were exposed to electron irradiation and characterized using deep level transient spectroscopy (DLTS). Our results suggest a concentration of 1019 cm–3 Ge doping has only a limited effect on the total density of vacancy related deep levels in silicon (© 2011 WILEY‐VCH Verlag GmbH & Co. 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| identifier | ISSN: 1862-6351 |
| ispartof | Physica status solidi. C, 2011-03, Vol.8 (3), p.674-677 |
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| language | eng |
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| source | Wiley Online Library All Journals |
| subjects | Crystal defects Czochralski process Czochralski silicon Deep level transient spectroscopy Density Devices Diodes DLTS Doping Electron irradiation Germanium germanium doping irradiation induced defect Lattice vacancies Silicon Silicon substrates |
| title | Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes |
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