Three-Dimensional Multiple-Order Twinning of Self-Catalyzed GaAs Nanowires on Si Substrates
In this paper we introduce a new paradigm for nanowire growth that explains the unwanted appearance of parasitic nonvertical nanowires. With a crystal structure polarization analysis of the initial stages of GaAs nanowire growth on Si substrates, we demonstrate that secondary seeds form due to a thr...
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| Veröffentlicht in: | Nano letters 2011-09, Vol.11 (9), p.3827-3832 |
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| container_issue | 9 |
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| container_title | Nano letters |
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| creator | Uccelli, Emanuele Arbiol, Jordi Magen, Cesar Krogstrup, Peter Russo-Averchi, Eleonora Heiss, Martin Mugny, Gabriel Morier-Genoud, François Nygård, Jesper Morante, Joan Ramon Fontcuberta i Morral, Anna |
| description | In this paper we introduce a new paradigm for nanowire growth that explains the unwanted appearance of parasitic nonvertical nanowires. With a crystal structure polarization analysis of the initial stages of GaAs nanowire growth on Si substrates, we demonstrate that secondary seeds form due to a three-dimensional twinning phenomenon. We derive the geometrical rules that underlie the multiple growth directions observed experimentally. These rules help optimizing nanowire array devices such as solar or water splitting cells or of more complex hierarchical branched nanowire devices. |
| doi_str_mv | 10.1021/nl201902w |
| format | Article |
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With a crystal structure polarization analysis of the initial stages of GaAs nanowire growth on Si substrates, we demonstrate that secondary seeds form due to a three-dimensional twinning phenomenon. We derive the geometrical rules that underlie the multiple growth directions observed experimentally. 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With a crystal structure polarization analysis of the initial stages of GaAs nanowire growth on Si substrates, we demonstrate that secondary seeds form due to a three-dimensional twinning phenomenon. We derive the geometrical rules that underlie the multiple growth directions observed experimentally. These rules help optimizing nanowire array devices such as solar or water splitting cells or of more complex hierarchical branched nanowire devices.</description><subject>Arrays</subject><subject>Catalytic methods</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Devices</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>Materials science</subject><subject>Methods of nanofabrication</subject><subject>Nanocrystalline materials</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals</subject><subject>Nanowires</subject><subject>Optimization</subject><subject>Physics</subject><subject>Quantum wires</subject><subject>Silicon substrates</subject><subject>Structure of solids and liquids; 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| subjects | Arrays Catalytic methods Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Devices Exact sciences and technology Gallium arsenide Gallium arsenides Materials science Methods of nanofabrication Nanocrystalline materials Nanoscale materials and structures: fabrication and characterization Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals Nanowires Optimization Physics Quantum wires Silicon substrates Structure of solids and liquids crystallography Three dimensional Twinning |
| title | Three-Dimensional Multiple-Order Twinning of Self-Catalyzed GaAs Nanowires on Si Substrates |
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