Effects of the refractive index of the encapsulant on the light-extraction efficiency of light-emitting diodes
We investigate the effects of the refractive index of the encapsulant on the light-extraction efficiency (LEE) of light-emitting diodes (LEDs) for GaN LEDs (n ≈ 2.5) and AlGaInP LEDs (n ≈ 3.0). For non-absorbing rectangular parallelepiped LED chips, as the refractive index of the encapsulant increas...
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| Veröffentlicht in: | Optics express 2011-09, Vol.19 Suppl 5 (S5), p.A1135-A1140 |
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| container_end_page | A1140 |
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| container_issue | S5 |
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| container_title | Optics express |
| container_volume | 19 Suppl 5 |
| creator | Ma, Ming Mont, Frank W Yan, Xing Cho, Jaehee Schubert, E Fred Kim, Gi Bum Sone, Cheolsoo |
| description | We investigate the effects of the refractive index of the encapsulant on the light-extraction efficiency (LEE) of light-emitting diodes (LEDs) for GaN LEDs (n ≈ 2.5) and AlGaInP LEDs (n ≈ 3.0). For non-absorbing rectangular parallelepiped LED chips, as the refractive index of the encapsulant increases, the LEE first increases quasi-linearly, then increases sub-linearly, and finally a saturation is reached. Furthermore, LEDs with a dual-layer graded-refractive-index (GRIN) encapsulant (n(encapsulant 1) = 1.57 and n(encapsulant 2) = 1.41) is fabricated through a two-step curing process. We demonstrate that such an LED further enhances the LEE by reducing Fresnel reflection loss at the encapsulant/air interface by 35% compared with an LED encapsulated with a single-layer encapsulant (n(encapsulant) = 1.57). |
| doi_str_mv | 10.1364/OE.19.0A1135 |
| format | Article |
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| title | Effects of the refractive index of the encapsulant on the light-extraction efficiency of light-emitting diodes |
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